| Project/Area Number |
16340093
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | KYUSHU UNIVERCITY |
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Principal Investigator |
WATANABE Yukio Kyushu University, Faculty of Science, Professor, 理学研究院, 教授 (40274550)
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| Co-Investigator(Kenkyū-buntansha) |
YAMADA Kazumasa Kyushu University, Faculty of Science, research associate, 理学研究院, 助手 (30380562)
FUJISAWA Hirokuni Hyogo Prefecture University, Faculty of Engineering, research associate, 工学研究科, 助手 (30285340)
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| Project Period (FY) |
2004 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥12,600,000 (Direct Cost: ¥12,600,000)
Fiscal Year 2006: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2005: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2004: ¥9,100,000 (Direct Cost: ¥9,100,000)
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| Keywords | ferroelectric / polarization / surface / 2-dimenstional electron / domain / size effect / nanometer / depolarization |
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| Research Abstract |
We've investigagted experimentally the existence of the intrinsic surface electron layer [1,2]. Furthermore, our results became the basis of the new ferroelectric field effect device [3] proposed by Prof. Okuyama's group who was the leader of the entire project. However, much skepticism about the intrinsic surface electron layer remains so far. Inspired by these suspicions, we have been conducting various experiments to examine all the conceivable issues that may invite criticisms. Owing to Prof. Ishibashi's generosity, we have done this using a newly built UHV system and crystals grown by different methods as well as nano-meter scale characterizations. As a byproduct we have found both n-and p-type non-volatile surface carrier layer that are electrically controllable for the first time. In our presentation, we report these progresses and the status of the understanding of surface carrier layer. Additionally, the same ferroelectric field effect is often thought to be the origin of the resistance-RAM's (RRAM) that use ferroelectrics.
[1]Y.Watanabe et al.,Phys.Rev.Lett.86,332 (2001).
[2]Physical Review Focus (Jan.9,2001) http://focus.aps.org/v7/st1.html
[3]G.Hirooka, M.Noda and M.Okuyama, Jpn.J.Appl.Phys.43,2190 (2004)
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