| Project/Area Number |
16350105
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TANIGUCHI Takashi National Institute for Materials Science, Advanced Nanomaterials Laboratory, High Pressure Group, Leader, ナノ物質ラボ, グループリーダー (80354413)
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| Co-Investigator(Kenkyū-buntansha) |
WATANABE Kenji National Institute for Materials Science, Optronic Materials Center, Senior Researcher, 光材料センター, 主任研究員 (20343840)
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| Project Period (FY) |
2004 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥15,800,000 (Direct Cost: ¥15,800,000)
Fiscal Year 2006: ¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 2005: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 2004: ¥8,000,000 (Direct Cost: ¥8,000,000)
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| Keywords | Deep ultraviolet light emission / Wide-band gap semiconductor / Hexagonal boron nitride / Impurity control / Flux single crystal growth / 六方晶窒化ホウ素 / 半導体光物性 / 高圧合成 / 単結晶フラックス成長 / 六方晶窒化ホウ素単結晶 / 直接遷移型ワイドバンドギャップ紫外線発光素子 / カソードルミネッセンス / 高圧下温度差法 / 希土類添加によるカラーセンター / 室温レーザー発振 |
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| Research Abstract |
To obtain a semiconductor light-emitting element with short wavelength below 300nm is a very important technical challenge for the area of information storage and environmental preservation process.
In this study, single crystalline hBN was obtained by using reactive solvent of Ba-BN system under high pressure. The crystals have a high degree of transparency and were shown to have very interesting optical characteristics. The high-purity single crystalline hBN obtained has a clear hexagonal shape, is colorless and is highly transparent. Evaluation of the optical characteristics of the crystal revealed high intensity ultraviolet emission (cathode luminescence : CL). From the observed optical characteristics, hBN is a semiconductor of the direct transition type with a band-gap of 5.9eV. It has thus been proven that hBN has excellent quality as a candidate for a new deep ultraviolet light emission element.
Since hBN has a layer structure, by unfolding, it is possible to obtain a crystal of parallel and flat shape. As the high-purity hBN parallel/flat crystal was excited with radiation of an electron beam, we found that light emission with 215nm wavelength causes several phenomena characteristic of laser operation, and confirmed the generation of a laser beam at room temperature. It has been proven that in principle, hBN has high potential for ultraviolet emission device materials since it is highly stable chemically and thermally as a wide-band semiconductor of the direct transition type.
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