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Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductors

Research Project

Project/Area Number 16360002
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTohoku University

Principal Investigator

SAKURABA Masao  Tohoku University, Research Institute of Electrical Communication, Associate Professor, 電気通信研究所, 助教授 (30271993)

Co-Investigator(Kenkyū-buntansha) MUROTA Junichi  Tohoku University, Research Institute of Electrical Communication, Professor, 電気通信研究所, 教授 (70182144)
竹廣 忍  東北大学, 電気通信研究所, 助手 (70344736)
Project Period (FY) 2004 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥14,700,000 (Direct Cost: ¥14,700,000)
Fiscal Year 2006: ¥4,700,000 (Direct Cost: ¥4,700,000)
Fiscal Year 2005: ¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 2004: ¥4,800,000 (Direct Cost: ¥4,800,000)
Keywordsgroup-IV semiconductor / atomic-layer control / electronic-band modulation / quantum effect / resonant tunneling / 量子トンネル構造 / エピタキシャル成長 / CVD / 局所歪
Research Abstract

Purpose of this project is, by atomic-layer control of group-IV semiconductors and introduction of atomic-order heterostructures, investigation of electronic-band modulation and formation of quantum tunneling structures in order to clarify new properties of carrier transport/generation/recombination processes and creation of novel electronic-band modulated semiconductors. Utilizing surface reactions of B_2H_6 and PH_3 on Si,Si_<1-x>Ge_x and Ge surfaces, conditions for atomic-layer formation of B and P were found under suppression of intermixing and islanding at low temperatures. Additionally, it was found that, by using Si_2H_6 as a more reactive reactant gas than SiH_4,P segregation during capping Si layer growth on a P adsorbed Si(100) could be effectively suppressed and many of P atoms were incorporated in a thin film region at the interface with the thickness below 2 nm and the maximum P concentration of 3x10^<21> cm^<-3>(atomic ratio 6%). Moreover, it was also found that such P atomic-layer doped structures showed higher Hall mobility than the conventional uniformly P doped Si. By using ECR plasma CVD without substrate heating, highly strained Ge and Si epitaxial growth on a (100) surface of Si and Ge with atomic-order flatness was achieved, and possibility of highly strained group-IV semiconductor heterostructures was shown (which was difficult to be achieved by conventional thermal CVD processes). In order to achieve higher-performance p-type resonant tunneling diodes, by investigating new conditions for epitaxial growth of high quality Si_<1-x>Ge_x/Si heterostructures, it is concluded that increase of Ge fraction in the heterostructure is quite effective to reach room temperature operation. These results are very useful to create novel electronic-band modulated semiconductors.

Report

(4 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • Research Products

    (100 results)

All 2007 2006 2005 2004 Other

All Journal Article (100 results)

  • [Journal Article] Carbon doping effect on strain relaxation during Si_<1-x-y>Ge_xC_y epitaxial growth on Si(100) at 500℃2007

    • Author(s)
      H.Nitta et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Strain control and electrical properties of stripe patterned Si/Si_<1-x>Ge_x/Si(100) heterostructures2007

    • Author(s)
      J.Uhm et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Hole tunneling properties in resonant tunneling diodes with Si/Strained Si_<0.8>Ge_<0.2> heterostructures grown on Si(100) by low-temperature ultraclean LPCVD2007

    • Author(s)
      R.Ito et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Epitaxial growth of highly strained Si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heating2007

    • Author(s)
      K.Sugawara et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH_3 and Si_2H_6 on strained Si_<1-x>Ge_x/Si(100) in ultraclean low pressure CVD2007

    • Author(s)
      Y.Chiba et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Carbon doping effect on strain relaxation during Si_<1-x-y>Ge_xC_y epitaxial growth on Si(100) at 500℃,2007

    • Author(s)
      H.Nitta et al.
    • Journal Title

      Semicond.Sci.Technol. Vol.22

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Strain control and electrical properties of stripe patterned Si/Si_<1-x>Ge_x/Si(100) heterostructures2007

    • Author(s)
      J.Uhm et al.
    • Journal Title

      Semicond.Sci.Technol. Vol.22

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Hole tunneling properties in resonant tunneling diodes with Si/Strained Si_<0.8>Ge_<0.2> heterostructures grown on Si(100) by low-temperature ultraclean LPCVD2007

    • Author(s)
      R.Ito et al.
    • Journal Title

      Semicond.Sci.Technol. Vol.22

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Epitaxial growth of highly strained Si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heating2007

    • Author(s)
      K.Sugawara et al.
    • Journal Title

      Semicond.Sci.Technol. Vol.22

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH_3 and Si_2H_6 on strained Si_<1-x>Ge_x/Si(100) in ultraclean low pressure CVD2007

    • Author(s)
      Y.Chiba et al.
    • Journal Title

      Semicond.Sci.Technol. Vol.22

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Carbon doping effect on strain relaxation during Si_<1-x-y>Ge_xC_y epitaxial growth on Si(100) at 500℃2007

    • Author(s)
      H.Nitta, et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Strain control and electrical properties of stripe patterned Si/Si_<1-x>Ge_x/Si(100) heterostructures2007

    • Author(s)
      J.Uhm, et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Hole tunneling properties in resonant tunneling diodes with Si/Strained Si_<0.8>Ge_<0.2> heterostructures grown on Si(100) by low-temperature ultraclean LPCVD2007

    • Author(s)
      R.Ito, et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH_3 and Si_2H_6 on strained Si_<1-x>Ge_x/Si(100) in ultraclean low pressure CVD2007

    • Author(s)
      Y.Chiba, et al.
    • Journal Title

      Semicond. Sci. Technol. 22

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Effect of Grain Boundary on Electrical Characteristics in B- and P-Doped Polycrystalline Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean LPCDV2006

    • Author(s)
      H.Shim et al.
    • Journal Title

      Thin Solid Films 508

      Pages: 36-39

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Carbon Effect on Strain Compensation in Si_<1-x-y>Ge_xC_y Films Epitaxially Grown on Si(100)2006

    • Author(s)
      H.Nitta et al.
    • Journal Title

      Thin Solid Films 508

      Pages: 140-142

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Thermal Effect on Strain Relaxation in Ge Films Epitaxially Grown on Si(100) Using ECR Plasma CVD2006

    • Author(s)
      K.Sugawara et al.
    • Journal Title

      Thin Solid Films 508

      Pages: 143-146

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Strain Relaxation by Stripe Patterning in Si/Si_<1-x>Ge_x/Si(l00) Hetereostructures2006

    • Author(s)
      J.Uhm et al.
    • Journal Title

      Thin Solid Films 508

      Pages: 239-242

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Surface reaction and B Atom Segregation in ECR Chlorine Plasma Etching of B-Doped Si_<1-x>Ge_x Epitaxial Films2006

    • Author(s)
      H.-S.Cho et al.
    • Journal Title

      Thin Solid Films 508

      Pages: 301-304

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Photo Detection Characteristics of Si/Si_<1-x>Ge_x/Si p-i-n Diodes Integrated with Optical Waveguides2006

    • Author(s)
      A.Yamada et al.
    • Journal Title

      Thin Solid Films 508

      Pages: 399-401

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition (Invited Review Paper)2006

    • Author(s)
      J.Murota et al.
    • Journal Title

      Jpn. J. Appl. Phys. Vol.45 No.9A

      Pages: 6767-6785

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Strain and Conductivity Behavior of Stripe Patterned Si/Si_<1-x>Ge_x/Si(100) Heterostructures2006

    • Author(s)
      J.Uhm et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 9-10

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] B Atomic Layer Formation on Si_<1-x>Ge_x(100) by Ultraclean LPCVD System2006

    • Author(s)
      K.Ishibashi et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 51-52

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] P atomic Layer Doping at Heterointerface of Epitaxial Si Layer and Si_<1-x>Ge_x(100) Substrate by Alternate Surface Reaction of PH_3 and Si_2H_6 in Ultraclean LPCVD2006

    • Author(s)
      Y.Chiba et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 73-74

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Thermal Stability of Nitrided Si Atomic Layer on Ge(100) Using Low Pressure CVD2006

    • Author(s)
      N.Akiyama et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 75-76

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD2006

    • Author(s)
      T.Seo et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 77-78

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Strain Control of Stripe Patterned Si/Si_<1-x>Ge_x/Si Heterostructures2006

    • Author(s)
      J.Uhm et al.
    • Journal Title

      ECS Trans. Vol.3 No.7

      Pages: 421-427

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] A Study on B Atomic Layer Formation for B-Doped Si_<1-x>Ge_x(100) Epitaxial Growth Using Ultraclean LPCVD System2006

    • Author(s)
      K.Ishibashi et al.
    • Journal Title

      ECS Trans. Vol.3 No.7

      Pages: 861-866

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Atomic-Order Thermal Nitridation of Si_<1-x>Ge_x(100) at Low Temperatures by NH_32006

    • Author(s)
      N.Akiyama et al.
    • Journal Title

      ECS Trans. Vol.3 No.7

      Pages: 1205-1210

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Effect of grain boundary on electrical characteristics in B-and P-doped polycrystalline Si_<1-x-y>Ge_xC_y film deposited by ultraclean LPCVD2006

    • Author(s)
      H.Shim et al.
    • Journal Title

      Thin Solid Films Vol.508

      Pages: 36-39

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Carbon effect on strain compensation in Si_<1-x-y>Ge_xC_y films epitaxially grown on Si(100)2006

    • Author(s)
      H.Nitta et al.
    • Journal Title

      Thin Solid Films Vol.508

      Pages: 140-142

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD2006

    • Author(s)
      K.Sugawara et al.
    • Journal Title

      Thin Solid Films Vol.508

      Pages: 143-146

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Strain relaxation by stripe patterning in Si/Si_<1-x>Ge_x/Si(100) hetereostructures2006

    • Author(s)
      J.Uhm et al.
    • Journal Title

      Thin Solid Films Vol.508

      Pages: 239-242

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si_<1-x>Ge_x epitaxial films2006

    • Author(s)
      H.-S.Cho et al.
    • Journal Title

      Thin Solid Films Vol.508

      Pages: 301-304

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Photo detection characteristics of Si/Si_<1-x>Ge_x/Si p-i-n diodes integrated with optical waveguides2006

    • Author(s)
      A.Yamada et al.
    • Journal Title

      Thin Solid Films Vol.508

      Pages: 399-401

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition (Invited Review Paper)2006

    • Author(s)
      J.Murota et al.
    • Journal Title

      Jpn.J.Appl.Phys. Vol.45, No.9A

      Pages: 6767-6785

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Strain and Conductivity Behavior of Stripe Patterned Si/Si_<1-x>Ge_x/Si(100) Heterostructures2006

    • Author(s)
      J.Uhm et al.
    • Journal Title

      2nd Int.Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct.2-3,2006 No.P-01

      Pages: 9-10

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] B Atomic Layer Formation on Si_<1-x>Ge_x(100) by Ultraclean LPCVD System2006

    • Author(s)
      K.Ishibashi et al.
    • Journal Title

      2nd Int.Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct.2-3,2006 No.P-16

      Pages: 51-52

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] P atomic Layer Doping at Heterointerface of Epitaxial Si Layer and Si_<1-x>Ge_x(100) Substrate by Alternate Surface Reaction of PH_3 and Si_2H_6 in Ultraclean LPCVD2006

    • Author(s)
      Y.Chiba et al.
    • Journal Title

      2nd Int.Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct.2-3,2006 No.P-27

      Pages: 73-74

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Thermal Stability of Nitrided Si Atomic Layer on Ge(100) Using Low Pressure CVD2006

    • Author(s)
      N.Akiyama et al.
    • Journal Title

      2nd Int.Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct.2-3,2006 No.P-28

      Pages: 75-76

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD2006

    • Author(s)
      T.Seo et al.
    • Journal Title

      2nd Int.Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct.2-3,2006 No.P-29

      Pages: 77-78

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Strain Control of Stripe Patterned Si/Si_<1-x>Ge_x/Si Heterostructures2006

    • Author(s)
      J.Uhm et al.
    • Journal Title

      ECS Trans., SiGe and Ge : Materials, Processing, and Devices(Edited by D.Harame et al.)The Electrochem.Soc., Pennington, NJ,2006) Vol.3, No.7

      Pages: 421-427

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] A Study on B Atomic Layer Formation for B-Doped Si_<1-x>Ge_x(100) Epitaxial Growth Using Ultraclean LPCVD System2006

    • Author(s)
      K.Ishibashi et al.
    • Journal Title

      ECS Trans., SiGe and Ge : Materials, Processing, and Devices(Edited by D.Harame et al.)The Electrochem. Soc., Pennington, NJ,2006) Vol.3, No.7

      Pages: 861-866

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Atomic-Order Thermal Nitridation of Si_<1-x>Ge_x(100) at Low Temperatures by NH_32006

    • Author(s)
      N.Akiyama et al.
    • Journal Title

      ECS Trans.SiGe and Ge : Materials, Processing, and Devices (Edited by D.Harame et al.) The Electrochem.Soc., Pennington, NJ,2006) Vol.3, No.7

      Pages: 1205-1210

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition (Invited Review Paper)2006

    • Author(s)
      J.Murota, et al.
    • Journal Title

      Jpn. J. Appl. Phys. Vol.45 No.9A

      Pages: 6767-6785

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Strain and Conductivity Behavior of Stripe Patterned Si/Si_<1-x>Ge_x/Si(100) Heterostructures2006

    • Author(s)
      J.Uhm, et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 9-10

    • Related Report
      2006 Annual Research Report
  • [Journal Article] B Atomic Layer Formation on Si_<1-x>Ge_x(100) by Ultraclean LPCVD System2006

    • Author(s)
      K.Ishibashi, et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 51-52

    • Related Report
      2006 Annual Research Report
  • [Journal Article] P atomic Layer Doping at Heterointerface of Epitaxial Si Layer and Si_<1-x>Ge_x(100) Substrate by Alternate Surface Reaction of PH_3 and Si_2H_6 in Ultraclean LPCVD2006

    • Author(s)
      Y.Chiba, et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 73-74

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Thermal Stability of Nitrided Si Atomic Layer on Ge(100) Using Low Pressure CVD2006

    • Author(s)
      N.Akiyama, et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 75-76

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD2006

    • Author(s)
      T.Seo, et al.
    • Journal Title

      Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)

      Pages: 77-78

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Strain Control of Stripe Patterned Si/Si_<1-x>Ge_x/Si Heterostructures2006

    • Author(s)
      J.Uhm, et al.
    • Journal Title

      ECS Trans. Vol.3 No.7

      Pages: 421-427

    • Related Report
      2006 Annual Research Report
  • [Journal Article] A Study on B Atomic Layer Formation for B-Doped Si_<1-x>Ge_x(l00) Epitaxial Growth Using Ultraclean LPCVD System2006

    • Author(s)
      K.Ishibashi, et al.
    • Journal Title

      ECS Trans. Vol.3 No.7

      Pages: 861-866

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Atomic-Order Thermal Nitridation of Si_<1-x>Ge_x(100) at Low Temperatures by NH_32006

    • Author(s)
      N.Akiyama, et al.
    • Journal Title

      ECS Trans. Vol.3 No.7

      Pages: 1205-1210

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Carbon Effect on Strain Compensation in Si<1-x-y>Ge_xC_y Films Epitaxially Grown on Si(100)2006

    • Author(s)
      H.Nitta et al.
    • Journal Title

      Thin Solid Films (in press)(掲載決定)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Thermal Effect on Strain Relaxation in Ge Films Epitaxially Grown on Si(100) Using ECR Plasma CVD2006

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      K.Sugawara et al.
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      Thin Solid Films (in press)(掲載決定)

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      2005 Annual Research Report
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      J.Uhm et al.
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      Thin Solid Films (in press)(掲載決定)

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      2005 Annual Research Report
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      Thin Solid Films (in press)(掲載決定)

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      2005 Annual Research Report
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      Thin Solid Films (in press)(掲載決定)

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      2005 Annual Research Report
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      Thin Solid Films (in press)(掲載決定)

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      2005 Annual Research Report
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      Mat. Sci. Semiconductor Processing 8

      Pages: 69-72

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
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      Mat. Sci. Semiconductor Processing 8

      Pages: 125-129

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
  • [Journal Article] Electrical Properties of N Atomic Layer Doped Si Epitaxial Films Grown by Ultraclean Low-Pressure Chemical Vapor Deposition2005

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      Y.Jeong et al.
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      Mat. Sci. Semiconductor Processing 8

      Pages: 121-124

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
  • [Journal Article] Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using Electron Cyclotron Resonance Plasma2005

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      M.Mori et al.
    • Journal Title

      Mat. Sci. Semiconductor Processing 8

      Pages: 65-68

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
  • [Journal Article] Integration of Si p-i-n Diodes for Light Emitter and Detector with Optical Waveguides2005

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      Mat. Sci. Semiconductor Processing 8

      Pages: 435-438

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
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    • Journal Title

      Proceedings of Int. Symp. ULSI Process Integration IV (Spring Meeting of The Electrochem. Soc, Canada, May 15-20, 2005) PV 2005-06

      Pages: 53-66

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
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    • Author(s)
      K.Sugawara et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing Vol.8

      Pages: 69-72

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Electrical Properties of W Delta Doped Si Epitaxial Films Grown on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition2005

    • Author(s)
      T.Kurosawa et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing Vol.8

      Pages: 125-129

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Electrical Properties of N Atomic Layer Doped Si Epitaxial Films Grown by Ultraclean Low-Pressure Chemical Vapor Deposition2005

    • Author(s)
      Y.Jeong et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing Vol.8

      Pages: 121-124

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using Electron Cyclotron Resonance Plasma2005

    • Author(s)
      M.Mori et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing Vol.8

      Pages: 65-68

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Integration of Si p-i-n Diodes for Light Emitter and Detector with Optical Waveguides2005

    • Author(s)
      A.Yamada et al.
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      Mat.Sci.Semiconductor Processing Vol.8

      Pages: 435-438

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005

    • Author(s)
      J.Murota et al.
    • Journal Title

      Proc.Int.Symp.ULSI Process Integration IV (Spring Meeting of Electrochem.Soc., Quebec City, Canada, May 15-20,2005)

      Pages: 53-66

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005

    • Author(s)
      J.Murota et al.
    • Journal Title

      Proceedings of Int.Symp.ULSI Process Integration IV (Spring Meeting of The Electrochem.Soc., Canada, May 15-20, 2005) PV 2005-06

      Pages: 53-66

    • Related Report
      2005 Annual Research Report
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    • Author(s)
      K.Sugawara et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing 8

      Pages: 69-72

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Electrical Properties of W Delta Doped Si Epitaxial Films Grown on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition2005

    • Author(s)
      T.Kurosawa et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing 8

      Pages: 125-129

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Electrical Properties of N Atomic Layer Doped Si Epitaxial Films Grown by Ultraclean Low-Pressure Chemical Vapor Deposition2005

    • Author(s)
      Y.Jeong et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing 8

      Pages: 121-124

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using Electron Cyclotron Resonance Plasma2005

    • Author(s)
      M.Mori et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing 8

      Pages: 65-68

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Integration of Si p-i-n Diodes for Light Emitter and Detector with Optical Waveguides2005

    • Author(s)
      A.Yamada et al.
    • Journal Title

      Mat.Sci.Semiconductor Processing 8

      Pages: 435-438

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Atomically Controlled Technology for Future Si-Based Devices2004

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      J.Murota et al.
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      Solid State Phenomena 95-96

      Pages: 607-616

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary 2004 Annual Research Report
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      D.Lee et al.
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      Appl. Surf. Sci. 224

      Pages: 254-259

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
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      J.Noh et al.
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      Appl. Surf. Sci. 224

      Pages: 77-81

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
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      Y.Jeong et al.
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      Appl. Surf. Sci. 224

      Pages: 197-201

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
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      Appl. Surf. Sci. 224

      Pages: 202-205

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
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      Appl. Surf. Sci. 224

      Pages: 206-209

    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
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      Appl. Surf. Sci. 224

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    • Description
      「研究成果報告書概要(和文)」より
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      2006 Final Research Report Summary
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      Solid State Phenomena Vol.95-96

      Pages: 607-616

    • Description
      「研究成果報告書概要(欧文)」より
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      D.Lee et al.
    • Journal Title

      Appl.Surf.Sci. Vol.224

      Pages: 254-259

    • Description
      「研究成果報告書概要(欧文)」より
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      2006 Final Research Report Summary
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    • Author(s)
      J.Noh et al.
    • Journal Title

      Appl.Surf.Sci. Vol.224

      Pages: 77-81

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_42004

    • Author(s)
      Y.Jeong et al.
    • Journal Title

      Appl.Surf.Sci. Vol.224

      Pages: 197-201

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Formation of Heavily P-Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique2004

    • Author(s)
      Y.Shimamune et al.
    • Journal Title

      Appl.Surf.Sci. Vol.224

      Pages: 202-205

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(100)2004

    • Author(s)
      M.Fujiu et al.
    • Journal Title

      Appl.Surf.Sci. Vol.224

      Pages: 206-209

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth2004

    • Author(s)
      D.Muto et al.
    • Journal Title

      Appl.Surf.Sci. Vol.224

      Pages: 210-214

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD2004

    • Author(s)
      D.Lee et al.
    • Journal Title

      Appl.Surf.Sci. 224

      Pages: 254-259

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Relationship between Impurity (B or P) and Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment2004

    • Author(s)
      J.Noh et al.
    • Journal Title

      Appl.Surf.Sci. 224

      Pages: 77-81

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_42004

    • Author(s)
      Y.Jeong et al.
    • Journal Title

      Appl.Surf Sci. 224

      Pages: 197-201

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique2004

    • Author(s)
      Y.Shimamune et al.
    • Journal Title

      Appl.Surf.Sci. 224

      Pages: 202-205

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(100)2004

    • Author(s)
      M.Fujiu et al.
    • Journal Title

      Appl.Surf.Sci. 224

      Pages: 206-209

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth2004

    • Author(s)
      D.Muto et al.
    • Journal Title

      Appl.Surf.Sci. 224

      Pages: 210-214

    • Related Report
      2004 Annual Research Report
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      J.Uhm et al.
    • Journal Title

      2nd Int.SiGe & Ge : Materials, Processing, and Device Symp. (210th Electrochem.Soc.Meeting), Cancun, Mexico, Oct.29-Nov.3,2006 Paper No.6.3

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
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    • Author(s)
      K.Ishibashi et al.
    • Journal Title

      2nd Int.SiGe & Ge : Materials, Processing, and Device Symp. (210th Electrochem. Soc. Meeting), Cancun, Mexico, Oct.29-Nov.3,2006 Paper No.14.4

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
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    • Author(s)
      N.Akiyama et al.
    • Journal Title

      2nd Int.SiGe & Ge : Materials, Processing, and Device Symp.(210th Electrochem.Soc.Meeting), Cancun, Mexico, Oct.29-Nov.3,2006 Paper No.20.4

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary

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Published: 2004-04-01   Modified: 2016-04-21  

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