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Controlling deformation of strained hetero structure of group IV semiconductors for realization of ultra uniform strain fields

Research Project

Project/Area Number 16360005
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionNagoya University

Principal Investigator

SAKAI Akira  Nagoya University, Graduate School of Engineering, Assistant Professor, 大学院工学研究科, 助教授 (20314031)

Co-Investigator(Kenkyū-buntansha) ZAIMA Shigeaki  Nagoya University, Urraduate School of Engineering, Professor, 大学院工学研究科, 教授 (70158947)
NAKATSUKA Osamu  Nagoya University, EcoTopia Science Institute, Assistant Professor, エコトピア科学研究所, 助手 (20334998)
Project Period (FY) 2004 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥15,200,000 (Direct Cost: ¥15,200,000)
Fiscal Year 2006: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 2005: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 2004: ¥11,400,000 (Direct Cost: ¥11,400,000)
KeywordsCrystal engineering / Crystal growth / Lattice defect / Semiconductor property / Electron microscopy / Silicon / Germanium / Strain structure / 歪み / ヘテロエピタキシャル / 転位 / 欠陥 / 透過電子顕微鏡 / X線回折 / 高分解能X線回析2次元逆格子マッピング
Research Abstract

In this project, we investigated the characterization of dislocations in hetero interfaces of strained lattice structures and developed technology for controlling deformation of thin films with controlling dislocation introduction mechanism.
(1) We investigated structures of dislocations and strains at interfaces of SiGe and Ge layers on Si(001) substrates. It is found that the mosaicity of Ge layers strain-relaxed with pure-edge dislocations is smaller than SiGe layers with 60°dislocations.
(2) We proposed the solid-phase intermixing method to form SiGe layers whose strain is relaxed dominantly by pure-edge dislocations, and demonstrated that the SiGe buffer layers exhibited less mosaicity.
(3) The dislocation and strain structures of Ge layers on Si substrates with various misorientations were investigated. We found that the tilting structure of Ge layers depended on the distance of steps on Si surface and demonstrated the effectivity of the Si substrate with small misorientation for lowering mosaicity of Ge layers.
(4) Dislocation and strain structures of Ge layers grown on the Si surface covered with Ge hat clusters were investigated. Forming Ge hat clusters on Si substrates enhances the introduction of pure-edge dislocations and suppresses generation of 60° dislocations. This effect leads to the reduction of mosaicity of Ge layers.
(5) We have investigated, using X-ray microdiffraction, local strain and crystalline texture in SiGe layers fabricated under various growth conditions on Si(001) substrates. We found that there are the mosaic structure and the inhomogeneous strain distribution in SiGe layers strain-relaxed dominantly with 60° dislocations.

Report

(4 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • Research Products

    (17 results)

All 2006 2005 2004 Other

All Journal Article (13 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction2006

    • Author(s)
      S.Mochizuki, A.Sakai, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
    • Journal Title

      Thin Solid Films 508 (1-2)

      Pages: 128-131

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates2006

    • Author(s)
      N.Taoka, A.Sakai, S.Mochizuki, O.Nakatsuka, M.Ogawa, S.Zaima
    • Journal Title

      Thin Solid Films 508 (1-2)

      Pages: 147-151

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] 次世代シリコンULSIに向けたIV族系半導体ヘテロ界面のひずみと転位の制御技術と評価2006

    • Author(s)
      酒井朗, 財満鎭明
    • Journal Title

      応用物理 75 (4)

      Pages: 426-434

    • NAID

      10017540920

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Engineering of strain and dislocations at group IV semiconductor thin-film interfaces for next-generation silicon ULSI2006

    • Author(s)
      A.Sakai, S.Zaima
    • Journal Title

      OYO BUTSURI 75 (4)

      Pages: 426-434

    • NAID

      10017540920

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations2005

    • Author(s)
      N.Taoka, A.Sakai, T.Egawa, O.Nakatsuka, S.Zaima, Y.Yasuda
    • Journal Title

      Materials Science in Semiconductor Processing 8 (1-3)

      Pages: 131-135

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems2005

    • Author(s)
      A.Sakai, N.Taoka, O.Nakatsuka, S.Zaima, Y.Yasuda
    • Journal Title

      Applied Physics Letters 86

    • NAID

      120000979691

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary 2005 Annual Research Report
  • [Journal Article] Fabrication technology of SiGe hetero-structures and their properties2005

    • Author(s)
      Y.Shiraki, A.Sakai
    • Journal Title

      Surface Science Reports 59 (7-8)

      Pages: 153-207

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Si_<1-x>Ge_xバッファ層の歪緩和および転位構造制御2005

    • Author(s)
      田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明
    • Journal Title

      日本結晶成長学会誌 32

      Pages: 89-98

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary 2005 Annual Research Report
  • [Journal Article] Control of strain and dislocation structures of Si_<1-x>,Ge_x buffer layers2005

    • Author(s)
      N.Taoka, A.Sakai, S.Mochizuki, O.Nakatsuka, M.Ogawa, S.Zaima
    • Journal Title

      Journal of the Japanese Association of Crystal Growth 32

      Pages: 89-98

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Dislocation and strain engineering for SiGe buffer layers on Si2005

    • Author(s)
      A.Sakai, S.Mochizuki, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
    • Journal Title

      Crystalline Defects and Contamination : Their Impact and Control in Device Manufacturing IV, DECON 2005, Proceedings of the Satellite Symposium to 35th European Solid-State Device Research Conference 2005 2005-10

      Pages: 16-29

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations2005

    • Author(s)
      N.Taoka, A.Sakai, T.Egawa, O.Nakatsuka, S.Zaima, Y.Yasuda
    • Journal Title

      Materials Science in Semiconductor Processing 8(1-3)

      Pages: 131-135

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Dislocation engineering for high-quality SiGe epitaxial films on Si substrates2004

    • Author(s)
      A.Sakai, S.Zaima, Y.Yasuda
    • Journal Title

      Proceedings of The 4th International Symposium on Advanced Science and Technology of Silicon Materials

      Pages: 245-250

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction

    • Author(s)
      A.Sakai, S.Mochizuki, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
    • Journal Title

      Thin Solid Films (印刷中)

    • Related Report
      2005 Annual Research Report
  • [Patent(Industrial Property Rights)] 歪み緩和ゲルマニウム膜及びその製造方法並びに多層膜構造体2005

    • Inventor(s)
      酒井朗,他4名
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Number
      2005-355102
    • Filing Date
      2005-12-08
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 歪緩和ゲルマニウム膜及びその製造方法並びに多層膜構造体2005

    • Inventor(s)
      酒井朗, 湯川勝規, 中塚理, 小川正毅, 財満鎭明
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Number
      2005-355102
    • Filing Date
      2005-12-08
    • Related Report
      2005 Annual Research Report
  • [Patent(Industrial Property Rights)] エピタキシャル成長用基材及びその製造方法並びに多層膜構造体2004

    • Inventor(s)
      酒井朗,他4名
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Number
      2004-207782
    • Filing Date
      2004-07-14
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Patent(Industrial Property Rights)] エピタキシャル成長用基材及びその製造方法並びに多層膜構造体2004

    • Inventor(s)
      酒井 朗, 田岡 紀之, 他3名
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Number
      2004-207782
    • Filing Date
      2004-07-14
    • Related Report
      2004 Annual Research Report

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Published: 2004-04-01   Modified: 2016-04-21  

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