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Formation of strained SiGe on glass and its application to high-speed thin-film transistor

Research Project

Project/Area Number 16360010
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKYUSHU UNIVERCITY

Principal Investigator

SADOH Taizoh  Kyushu University, Department of Electronics, Associate professor, 大学院システム情報科学研究院, 助教授 (20274491)

Co-Investigator(Kenkyū-buntansha) MIYAO Masanobu  Kyushu University, Department of Electronics, Professor, 大学院システム情報科学研究院, 教授 (60315132)
KENJO Atsushi  Kyushu University, Department of Electronics, Research Associate, 大学院システム情報科学研究院, 助手 (20037899)
Project Period (FY) 2004 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥14,700,000 (Direct Cost: ¥14,700,000)
Fiscal Year 2006: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 2005: ¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 2004: ¥4,600,000 (Direct Cost: ¥4,600,000)
KeywordsElectronic device / Integrated circuit / Display / Silicon-germanium / Thin-film transistor
Research Abstract

Modified metal-induced lateral crystallization (MILC) using a-Ge/a-Si/SiO_2 layered structure has been investigated. Crystal nucleation initiated in the a-Ge layer stimulated the bond rearrangement in a-Si, which successfully enhanced the MILC growth velocity by three times. As a result, poly-Si films with large areas (〜10 μm) were obtained in a short time annealing (<5 h) at 550℃.
Moreover, Ge-channel field-effect transistors (FETs) with Schottky source/drain (S/D) contacts were fabricated on glass substrates using low temperature (<500℃) processing. First, annealing characteristics (200-500℃) of Ni/n-type c-Ge stacked structures were examined. Results indicated that NiGe/n-Ge Schottky contacts (Φ_<Bn>〜0.51 eV, n〜1) with flat interfaces and low reverse leakage current (2-5×10^<-2>A/cm^2) could be obtained by choosing annealing temperatures (200-300℃). Based on this result, p-channel thin-film transistors (TFTs) were fabricated using poly-Ge/glass formed by solid-phase crystallization at 500℃. The TFTs suppressed the kink-effect and showed a relatively high hole mobility of 〜40 cm^2/Vs. Potential capability of the proposed TFTs should be utilized in high-performance TFTs.

Report

(4 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • Research Products

    (21 results)

All 2007 2006 2005 2004

All Journal Article (21 results)

  • [Journal Article] Ge-channel thin-film transistor with Schottky source/drain fabricated by low-temperature processing2007

    • Author(s)
      T.Sadoh 他
    • Journal Title

      Jpn. J. Appl. Phys. 46(3B)

      Pages: 1250-1253

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Ge-channel thin-film transistor with Schottky source/drain fabricated by low-temperature processing2007

    • Author(s)
      T.Sadoh, et al.
    • Journal Title

      Jpn.J.Appl.Phys. 46(3B)

      Pages: 1250-1253

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate2006

    • Author(s)
      H.Kanno 他
    • Journal Title

      Appl. Phys. Lett. 89(18)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Low-temperature formation (<500℃) of poly-Ge thin-film transistor with NiGe Schottky source/drain2006

    • Author(s)
      T.Sadoh 他
    • Journal Title

      Appl. Phys. Lett. 89(19)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate2006

    • Author(s)
      H.Kanno, et al.
    • Journal Title

      Appl.Phys.Lett. 89(18)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Low-temperature formation (<500℃) of poly-Ge thin-film transistor with NiGe Schottky source/drain2006

    • Author(s)
      T.Sadoh, et al.
    • Journal Title

      Appl.Phys.Lett. 89(19)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate2006

    • Author(s)
      H.Kanno 他
    • Journal Title

      Applied Physics Letters 89(18)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Low-temperature formation (<500℃) of poly-Ge thin-film transistor with NiGe Schottky source/drain2006

    • Author(s)
      T.Sadoh 他
    • Journal Title

      Applied Physics Letters 89(19)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x : 0-1) on SiO_2 by Au-Mediated Lateral Crystallization2005

    • Author(s)
      H.Kanno 他
    • Journal Title

      Jpn. J. Appl. Phys. 44(4B)

      Pages: 2357-2360

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field2005

    • Author(s)
      H.Kanno 他
    • Journal Title

      Journal of Crystal Growth 279(1-2)

      Pages: 1-4

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary 2005 Annual Research Report
  • [Journal Article] Low-Temperature Formation of Poly-Si1_<1-x>Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization2005

    • Author(s)
      H.Kanno, et al.
    • Journal Title

      Jpn.J.Appl.Phys. 44(4B)

      Pages: 2357-2360

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field2005

    • Author(s)
      H.Kanno, et al.
    • Journal Title

      J.Crystal Growth 279(1-2)

      Pages: 1-4

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x: 0-1) on SiO_2 by Au-Mediated Lateral Crystallization2005

    • Author(s)
      H.Kanno 他
    • Journal Title

      Japanese Journal Applied Physics 44(4B)

      Pages: 2357-2360

    • Related Report
      2005 Annual Research Report
  • [Journal Article] 400℃ Formation of Poly-SiGe on SiO_2 by Au-Induced Lateral Crystallization2005

    • Author(s)
      H.Kanno 他
    • Journal Title

      Materials Science in Semiconductor Processing 8

      Pages: 79-82

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Ge-Enhanced MILC Velocity in a-Ge/a-Si/SiO_2 Layered Structure2005

    • Author(s)
      H.Kanno 他
    • Journal Title

      Materials Science in Semiconductor Processing 8

      Pages: 83-88

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO_2 Layered Structure2004

    • Author(s)
      H.Kanno 他
    • Journal Title

      Jpn. J. Appl. Phys. 43(4B)

      Pages: 1852-1855

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure2004

    • Author(s)
      H.Kanno, et al.
    • Journal Title

      Appl.Phys.Lett. 85(6)

      Pages: 899-901

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Ge-dependent Morphological Change in Poly-SiGe Formed by Ni-mediated Crystallization2004

    • Author(s)
      T.Sadoh 他
    • Journal Title

      Applied Surface Science 224(1-4)

      Pages: 227-230

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Enhancement of metal-induced crystallization in SiGe/Ge/Ni/SiO_2 layered structure2004

    • Author(s)
      H.Kanno 他
    • Journal Title

      Thin Solid Films 451-452C

      Pages: 324-327

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Enhance Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO_2 Layered Structure2004

    • Author(s)
      H.Kanno 他
    • Journal Title

      Jpn.J.Appl.Phys. 43(4B)

      Pages: 1852-1855

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Modified metal-induced lateral ctystallization using amorphous Ge/Si layered structure2004

    • Author(s)
      H.Kanno 他
    • Journal Title

      Appl.Phys.Lett. 85(6)

      Pages: 899-901

    • Related Report
      2004 Annual Research Report

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Published: 2004-04-01   Modified: 2016-04-21  

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