| Project/Area Number |
16360010
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | KYUSHU UNIVERCITY |
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Principal Investigator |
SADOH Taizoh Kyushu University, Department of Electronics, Associate professor, 大学院システム情報科学研究院, 助教授 (20274491)
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| Co-Investigator(Kenkyū-buntansha) |
MIYAO Masanobu Kyushu University, Department of Electronics, Professor, 大学院システム情報科学研究院, 教授 (60315132)
KENJO Atsushi Kyushu University, Department of Electronics, Research Associate, 大学院システム情報科学研究院, 助手 (20037899)
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| Project Period (FY) |
2004 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥14,700,000 (Direct Cost: ¥14,700,000)
Fiscal Year 2006: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 2005: ¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 2004: ¥4,600,000 (Direct Cost: ¥4,600,000)
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| Keywords | Electronic device / Integrated circuit / Display / Silicon-germanium / Thin-film transistor |
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| Research Abstract |
Modified metal-induced lateral crystallization (MILC) using a-Ge/a-Si/SiO_2 layered structure has been investigated. Crystal nucleation initiated in the a-Ge layer stimulated the bond rearrangement in a-Si, which successfully enhanced the MILC growth velocity by three times. As a result, poly-Si films with large areas (〜10 μm) were obtained in a short time annealing (<5 h) at 550℃.
Moreover, Ge-channel field-effect transistors (FETs) with Schottky source/drain (S/D) contacts were fabricated on glass substrates using low temperature (<500℃) processing. First, annealing characteristics (200-500℃) of Ni/n-type c-Ge stacked structures were examined. Results indicated that NiGe/n-Ge Schottky contacts (Φ_<Bn>〜0.51 eV, n〜1) with flat interfaces and low reverse leakage current (2-5×10^<-2>A/cm^2) could be obtained by choosing annealing temperatures (200-300℃). Based on this result, p-channel thin-film transistors (TFTs) were fabricated using poly-Ge/glass formed by solid-phase crystallization at 500℃. The TFTs suppressed the kink-effect and showed a relatively high hole mobility of 〜40 cm^2/Vs. Potential capability of the proposed TFTs should be utilized in high-performance TFTs.
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