| Project/Area Number |
16360070
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
YASUTAKE Kiyoshi Osaka University, Graduate School of Engineering, Department of Precision Science and Technology, Professor, 大学院工学研究科, 教授 (80166503)
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| Co-Investigator(Kenkyū-buntansha) |
WATANABE Heiji Osaka University, Graduate School of Engineering, Division of Advanced Science and Biotechnology, Professor, 大学院工学研究科, 教授 (90379115)
SHIMURA Takayoshi Osaka University, Graduate School of Engineering, Division of Advanced Science and Biotechnology, Associate Professor, 大学院工学研究科, 助教授 (90252600)
OHMI Hiromasa Osaka University, Graduate School of Engineering, Department of Precision Science and Technology, Assistant Professor, 大学院工学研究科, 助手 (00335382)
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| Project Period (FY) |
2004 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥10,400,000 (Direct Cost: ¥10,400,000)
Fiscal Year 2006: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2005: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 2004: ¥6,300,000 (Direct Cost: ¥6,300,000)
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| Keywords | polycrystalline Si / Si thin film / glass substrate / large-grain / crystal nucleus / Ge nano-crystal / solid phase crystallization / nano-imprint |
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| Research Abstract |
Large-grained polycrystalline silicon (poly-Si) thin films on glass substrates are of interest for the fabrication of high-performance thin-film transistors (TFT) and cost-effective solar cells. To obtain large-grained poly-Si thin films, it is important to control the formation of nucleation sites for Si crystal growth on a glass surface prior to film deposition. Glass substrates having nucleation sites with tailored properties, such as size and spacing, are particularly desirable for the solid-phase crystallization (SPC) of amorphous silicon (a-Si) thin films. In this work, we have proposed a new process to fabricate crystalline Ge islands with controlled size and density in a tailored range to form nuclei for SPC of a-Si thin films. The process consists of the deposition of a-Ge thin films on glass substrates at room temperature, the subsequent vacuum annealing for SPC of the deposited a-Ge thin films to form self-assembled crystalline Ge islands, and the oxygen etching for controlling the size and density of Ge islands. From the micro beam reflection high-energy electron diffraction observation of the partially crystallized a-Si thin film using Ge nuclei, we have confirmed that Ge islands act as nuclei for Si crystallization. Marked reductions of the crystallization time and temperature are observed in the annealing experiments of a-Si : H thin films deposited on glass substrates with Ge nuclei. Moreover, it is found that the crystal growth rate of a-Si : H deposited by atmospheric pressure plasma CVD is much larger than that of a-Si deposited by E-beam evaporation. For the location control of Ge nuclei on glass substrates, a nano-imprint technique using crystalline Ge tip array has been demonstrated.
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