| Project/Area Number |
16360144
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
DOI Masaaki Tohoku University, Graduate School of Engineering, Associate Professor, 大学院工学研究科, 助教授 (10237167)
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| Co-Investigator(Kenkyū-buntansha) |
SAHASHI Masashi Tohoku University, Graduate School of Engineering, Professor, 大学院工学研究科, 教授 (20361123)
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| Project Period (FY) |
2004 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥15,100,000 (Direct Cost: ¥15,100,000)
Fiscal Year 2006: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2005: ¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2004: ¥10,000,000 (Direct Cost: ¥10,000,000)
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| Keywords | spin polarization / Mossbauer effect / voltage control / ultra thin oxide layer / epitaxial / spin injection |
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| Research Abstract |
For the fabrication of the voltage controlled spin polarization multilayer, the experiment has been carried out by following step.
1.The apparatus for the fabrication and analysis of the thin film was set up.
1)The apparatus for the fabrication of oxide thin film and in-situ measurement system was set up.
2)The measurement system for the Mossbauer effect was set up.
2.The establishment of the fabrication and analysis method for the Nano-Oxide-Layer.
1)Study for the structural and magnetic properties of CoFe-NOL(Nano-Oxide-Layer).
2)Study on the fabrication of Ta_2O_5 with high dielectric constant.
3.Study for the structural and magnetic properties of MNOM (metal/native oxide multilayer).
1)Fabrication and structural analyses of MNOM
2)The design of the voltage controlled spin polarization multilayer
The estimation method of the nano-oxide layer by using the conductive atom force microscope was established. From the analysis of magnetization process under magnetic cooling effect and Mossbauer spectrum, the magnetic structure of ultra thin oxide of CoFe and Fe were clarified. We also succeeded in the fabrication of ultra thin Ta_2O_5 with high dielectric constant. The design of the voltage controlled spin polarization multilayer by the metal/native oxide multilayer was discussed by using ultra thin Ta_2O_5. The experiment for the spin polarization controlled by voltage should be continued.
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