An over-100dB wide dynamic range solid-state image sensor with high sensitivity and high S/N ratio.
| Project/Area Number |
16360165
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
SUGAWA Shigetoshi Tohoku University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (70321974)
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| Co-Investigator(Kenkyū-buntansha) |
KONANI Koji Tohoku University, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (20250699)
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| Project Period (FY) |
2004 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥15,100,000 (Direct Cost: ¥15,100,000)
Fiscal Year 2005: ¥6,300,000 (Direct Cost: ¥6,300,000)
Fiscal Year 2004: ¥8,800,000 (Direct Cost: ¥8,800,000)
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| Keywords | Image Sensor / High Sensitivity / Wide Dynamic Range / CMOS |
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| Research Abstract |
The purpose of this research is to propose the solid state image sensor with high sensitivity and high S/N performance that equals the solid state image sensor of a current best performance and exceed five digits (100dB) dynamic range and to build the base of the achievement technology.
In the first year, it has succeeded in the design, making a chip and camera operation of the wide dynamic range CMOS image sensor that have the lateral overflow capacitor being adjacent to the pinned-photodiode of each pixel and storage exceeded saturation carriers in the same exposure time, and the characteristic of the dynamic range of 100dB was achieved. In the next year, the CMOS image sensor quantitatively examines the tolerance to the leakage current, dark current and noise at a high luminance light irradiation. The photoelectron that overflowed from the photodiode was able to accumulate in the lateral overflow capacitor effectively and the leakage to the adjacent pixels corresponds to a ratio of the 10^<-3> or less, and the tolerance to the noise of the signal that accumulated in the lateral overflow capacitor had 100 times or more the tolerance for the noise signal of the photodiode. Moreover, the change of the design of the lateral overflow capacitor in the pixel and the operation timing have been done to achieve the color image sensor, and the improvement of linearity of photoelectric conversion characteristic and sensitivity. The color CMOS image sensor having effective number of pixels 640x480, pixel size 7.5um was fabricated, and the high-resolution color taking picture performance that had the characteristic of the dynamic range of 102dB was achieved. By researching this CMOS image sensor, the base of the wide dynamic range and high quality imaging technology with good time and spatial sampling was able to be built.
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Report
(3 results)
Research Products
(26 results)
