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Beta-NMR study on impurity diffusion in semiconductors.

Research Project

Project/Area Number 16540283
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Condensed matter physics I
Research InstitutionNiigata University

Principal Investigator

IZUMIKAWA Takuji  Niigata University, Radioisotope Center, Associate Professor, アイソトープ総合センター, 助教授 (60282985)

Co-Investigator(Kenkyū-buntansha) MINAMISONO Tadanori  Fukui University of Technology, Department for the Application of Nuclear Technology, Professor, 環境生命未来工学科, 教授 (20028210)
OHYA Susumu  Niigata University, Institute of Science and Technology, Professor, 自然科学系, 教授 (90092676)
MATSUTA Kensaku  Osaka University, Department of Physics, Associate Professor, 大学院・理学研究科, 助教授 (50181722)
OHTSUBO Takashi  Niigata University, Institute of Science and Technology, Associate Professor, 自然科学系, 助教授 (70262425)
GOTO Jun  Radioisotope Center, Assistant, アイソトープ総合センター, 助手 (90370395)
Project Period (FY) 2004 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2005: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2004: ¥1,700,000 (Direct Cost: ¥1,700,000)
KeywordsSemiconductor / Lattice Defect / Atomic Jump / NMR / Unstable Nuclei
Research Abstract

The beta-NMR measurements of the boron impurity in germanium were performed. The obtained results are as follows. Three resonances were found : a sharp resonance and a broad one around the Larmor frequency, a resonance at vqSplit=190 kHz. In the same manner as silicon, these three resonances were expected to correspond to the substitutional site (Bs), the site which shows polycrystal pattern (Bx), and the <111> axial symmetrical site (Bns), respectively. While the fraction of Bns is almost constant of 30 % below the temperature of 250 K, above 300 K the resonance disappears. This disappearance is also similar with the case of silicon, i.e., the spin-lattice relaxation should be caused by the fluctuation of the internal field due to the atomic jumps. The temperature dependence of the Bs+Bx was slightly different to the silicon case. Around the room temperature it decreases and makes a depression. One explanation for it may be that the chance for the interaction of Bs or Bx with the vacancy created by the implantation increases with the temperature, and it follows destruction of the polarization.
In order to confirm the model of the atomic jump, the temperature dependence of the fractions of each site were measured under the different external magnetic fields. As a result, the temperature at which the NMR signal disappears agreed with the expected value by our model. This supports the validity of the atomic jump model.
The nitrogen impurity in the compound semiconductor TiO2 and ZnO was also investigated. The electric field gradient at the nitrogen impurity in ZnO was measured. The nitrogen impurity in TiO2 locates at oxygen substitutional site and interstitial lattice site. While the substitutional nitrogen seems to be immobile, the defect around the substitutional nitrogen and the interstitial nitrogen seems to be mobile thermally.

Report

(3 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • Research Products

    (15 results)

All 2006 2005

All Journal Article (15 results)

  • [Journal Article] Lattice location of 12B implanted in Si.2006

    • Author(s)
      T.Izumikawa
    • Journal Title

      Physica B 376-377

      Pages: 193-195

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Microscopic observation of impurities in TiO2 using radioactive nuclear probes.2006

    • Author(s)
      M.Mihara
    • Journal Title

      Physica B 376-377

      Pages: 955-958

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 半導体Ge中のホウ素不純物のβ-NMR2006

    • Author(s)
      泉川 卓司
    • Journal Title

      原子核プローブ生成とそれを用いた物性研究専門研究会報告書 KURRI-KR6

      Pages: 140-142

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] ZnO中12Nの超微細相互作用2006

    • Author(s)
      三原 基嗣
    • Journal Title

      原子核プローブ生成とそれを用いた物性研究専門研究会報告書 KURRI-KR6

      Pages: 136-139

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Ge中でのホウ素の受ける超微細相互作用の研究2006

    • Author(s)
      篠島 大亮
    • Journal Title

      新潟大学大学院自然科学研究科修士論文

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Beta-NMR study on boron impurity in semiconductor Ge.2006

    • Author(s)
      T.Izumikawa
    • Journal Title

      Proceedings of the specialist research meeting on "production of nuclear probes and their uses in solid state physics research" KURRI-KR

      Pages: 140-142

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Hyperfine interaction of 12N in ZnO.2006

    • Author(s)
      M.Mihara
    • Journal Title

      Proceedings of the specialist research meeting on "production of nuclear probes and their uses in solid state physics research" KURRI-KR6

      Pages: 136-139

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Hyperfine interactions of boron in Ge.2006

    • Author(s)
      D.Shimojima
    • Journal Title

      Master thesis, Niigata University

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Lattice location of 12B implanted in Si.2006

    • Author(s)
      T.Izumikawa
    • Journal Title

      Physica B (In Press)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] 半導体Ge中のホウ素不純物のβ-NMR2006

    • Author(s)
      泉川 卓司
    • Journal Title

      原子核プローブ生成とそれを用いた物性研究専門研究会報告書 (印刷中)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Microscopic observation of impurities in TiO2 using radioactive nuclear probes2006

    • Author(s)
      M.Mihara
    • Journal Title

      Physica B (In Press)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] ZnO中12Nの超微細相互作用2006

    • Author(s)
      三原 基嗣
    • Journal Title

      原子核プローブ生成とそれを用いた物性研究専門研究会報告書 (印刷中)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] ベータNMRによる金属結晶中不純物12B及び12Nの電子構造の研究2005

    • Author(s)
      神代 真一
    • Journal Title

      大阪大学大学院理学研究科修士論文

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Beta-NMR study on electronic structure of 12N and 12B impurities in metal.2005

    • Author(s)
      S.Kumashiro
    • Journal Title

      Master thesis, Osaka University

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] ベータNMR法によるPd金属結晶中不純物12B及び12Nの電子構造研究2005

    • Author(s)
      神代真一
    • Journal Title

      大阪大学大学院理学研究科修士論文

    • Related Report
      2004 Annual Research Report

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Published: 2004-04-01   Modified: 2020-05-15  

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