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Synchrotron Radiation Imaging Observation with Extremely Small Exit Angle for Lattice Mismatched Semiconductor Epitaxial

Research Project

Project/Area Number 16560010
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyushu Institute of Technology

Principal Investigator

SUZUKI Yoshifumi  Kyushu Institute of Technology, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (10206550)

Co-Investigator(Kenkyū-buntansha) CHIKAURA Yoshinori  Kyushu Institute of Technology, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (40016168)
Project Period (FY) 2004 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2005: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2004: ¥3,000,000 (Direct Cost: ¥3,000,000)
KeywordsSynchrotron / Lattice Mismatched / Semiconductor Epitaxial Film / Surface and Interface / Extremely Small Incident Angle / Imaging / Critical angle / X-ray Diffraction
Research Abstract

We develop X-ray scattering topography system, which is capable for observing a semiconductor epitaxial layer with sub-micron laterally spatial resolution using synchrotron radiation. The scattering topography system proposed by us with sub-micron laterally spatial resolution have a main component of a straight micro pinhole device. We have demonstrated observation for dislocations in Si, Ge, GaAs etc. bulk samples, and obtained valuable information which has never gotten by other characterization method. We had never reached better observation for epitaxial film than bulk one. We are going to try characterization of X-ray diffraction optical geometry at around critical angle with controlling of X-ray penetration depth.
Silicon wafer specimens with different surface nanotopography patterns, as measured by optical measurements, and different boron concentrations, were characterized by a grazing incident diffraction (GID) topography and total reflection imaging method near the critical an … More gle using plane-waves. We used plane-waves produced by the high-resolution diffraction topography station located at the medium-length (200 m) bending-magnet beam line at BL20B2 of SPring-8. The GID topographs and total reflection images gave qualitative and detailed information on the dependence of surface roughness on boron doping concentration. Moreover, grazing incident X-ray diffraction is based on the new technique called in-plane diffraction measurement. GaN epitaxial layer grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrate. Using the in-plane diffraction measurement, we could obtain significant information concerning to GaN growth mechanism. The hexagonal (wurtzite) phase often co-exists with cubic (zinc blende) one for two-polymorphs (wurtzite and zinc-blend structures). Incident angle dependence of GaN epitaxial layer for in plane 2θ_χ/φ-scannning diffraction intensity (a) zincblende-GaN, (b) wurtzite-GaN, critical angle ω_c is 0.206° for CuKα_1. While the lattice spacing for GaN_<zinc blende> || have a dependence of depth, that for GaN_<wurtzite> crystal have no depth dependence. Less

Report

(3 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • Research Products

    (16 results)

All 2005 2004

All Journal Article (16 results)

  • [Journal Article] Three-dimensional structure of dislocation in silocon determined by synchrotron white x-ray topography combined with a topo-tomographic technique2005

    • Author(s)
      川戸清爾, 太子敏則, 飯田敏, 鈴木芳文, 近浦吉則, 梶原堅太郎
    • Journal Title

      J. Phys. D : Apple.Phys. 38

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Plane Wave Synchrotron X-ray Topography Observation of Grown-in Microdefects in Slowly Pulled CZ-Silicon Crystals2005

    • Author(s)
      飯田敏, 川戸清爾, 前濱剛廣, 梶原堅太郎, 木村滋, 松井純爾, 鈴木芳文, 近浦吉則
    • Journal Title

      J. Phys. D : Appl.Phys. 38

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] White beam X-ray topographic measurement of spontaneous strain in strontium titanate.2005

    • Author(s)
      尾崎徹, 楠瀬健太, 岡本博之, 梶原堅太郎, 鈴木芳文, 近浦吉則
    • Journal Title

      Nuclear Instruments and Methods in Physics Research B238

      Pages: 255-258

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Lattice Orientation Imaging of C_60-Fullerene Single Crystal with Microbeam-Scanning-Type X-ray Scanning Topography Using Charged-Coupled Device Detector2005

    • Author(s)
      鈴木芳文, 近浦吉則
    • Journal Title

      Jpn. J. Appl. Phys. 44 No.12

      Pages: 8679-8683

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Three-dimensional structure of dislocations in silicon determined by synchrotron white x-ray topography combined with a topo-tomographic technique2005

    • Author(s)
      S.Kawado, T.Taishi, S.lida, Y.Suzuki, Y.Chikaura, K.Kajiwara
    • Journal Title

      J.Phys.D : Appl.Phys. 38

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Plane Wave Synchrotron X-ray Topography Observation of Grown-in Microdefects in Slowly Pulled CZ-Silicon Crystals2005

    • Author(s)
      S.Iida, S.Kawado, M.Maehama, K.Kajiwara, S.Kimura, J.Matsui, Y.Suzuki, Y.Chikaura
    • Journal Title

      J.Phys.D : Appl.Phys. 38

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] White beam X-ray topographic measurement of spontaneous strain in strontium titanate2005

    • Author(s)
      T.Ozaki, K.Kusunose, H.Sakaue, H.Okamoto, K.Kajiwara, Y.Suzuki, Y.Chikaura
    • Journal Title

      Nuclear Instruments and Methods in Physics Research B238

      Pages: 255-258

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Lattice Orientation Imaging of C_<60>-Fullerene Single Crystal with Microbeam-Scanning-Type X-ray Scattering Topography Using Charged-Coupled Device Detector2005

    • Author(s)
      Yoshifumi Suzuki, Yoshinori Chikaura
    • Journal Title

      Jpn.J.Appl.Phys. 44-No.12

      Pages: 8679-8683

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Three-dimensional structure of dislocations in silicon determined by synchrotron white x-ray topography combined with a topo-tomographic technique2005

    • Author(s)
      川戸清爾, 太子敏則, 飯田敏, 鈴木芳文, 近浦吉則, 梶原堅太郎
    • Journal Title

      J.Phys. D : Appl.Phys. 38

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Plane Wave Synchrotron X-ray Topography Observation of Grown-in Microdefects in Slowly Pulled CZ-Silicon Crystals2005

    • Author(s)
      飯田敏, 川戸清爾, 前濱剛廣, 梶原堅太郎, 木村滋, 松井純爾, 鈴木芳文, 近浦吉則
    • Journal Title

      J.Phys. D : Appl.Phys. 38

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Lattice Orientation Imaging of C_<60>-Fullerene Single Crystal with Microbeam-Scanning-Type X-ray Scattering Topography Using Charged-Coupled Device Detector2005

    • Author(s)
      鈴木芳文, 近浦吉則
    • Journal Title

      Jpn.J.Appl.Phys. 44 No.12

      Pages: 8679-8683

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Determination of the three-dimensional structure of dislocations in silicon by synchrotron white X-ray topography combined with a topo-tomographic technique2004

    • Author(s)
      川戸清爾, 太子敏則, 飯田敏, 鈴木芳文, 近浦吉則, 梶原堅太郎
    • Journal Title

      Journal of Synchrotron Radiation Vol.11

      Pages: 304-308

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary 2004 Annual Research Report
  • [Journal Article] Observation of Silocon Front Surface Topographs of a ULSI-Wafer by Synchrotron X-ray Plane Wave2004

    • Author(s)
      鈴木芳文, 塚崎祥充, 川戸清爾, 梶原堅太郎, 飯田敏, 近浦吉則
    • Journal Title

      Journal of Applied. Physics Vol.96No.11

      Pages: 6259-6261

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Determination of the three-dimensional structure of dislocations in silicon by synchrotron white X-ray topography combined with a topo-tomographic technique2004

    • Author(s)
      Seiji Kawado, Toshinori Taishi, Satoshi Iida, Yoshifumi Suzuki, Yoshinori Chikaura, Kentarou Kajiwara
    • Journal Title

      Journal of Synchrotron Radiation 11

      Pages: 304-308

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Observation of Silicon Front Surface Topographs of aULSI-Wafer by Synchrotron X-ray Plane Wave2004

    • Author(s)
      Yoshifumi Suzuki, Yoshimitsu Tsukasaki, Kentaro Kajiwara, Seiji Kawado, Satoshi lida, Yoshinori Chikaura
    • Journal Title

      J.Appl.Phys. 96-No.11

      Pages: 6259-6261

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Observation of Silicon Front Surface Topographs of a ULSI-Wafer by Synchrotron X-ray Plane Wave2004

    • Author(s)
      鈴木芳文, 塚崎祥充, 川戸清爾, 梶原堅太郎, 飯田敏, 近浦吉則
    • Journal Title

      Journal of Applied.Physics Vol.96 No.12

      Pages: 6259-6261

    • Related Report
      2004 Annual Research Report

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Published: 2004-04-01   Modified: 2016-04-21  

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