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Fabrication and characterization of AlInN nanostructures using synchrotron radiation light

Research Project

Project/Area Number 16560013
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionSaga University

Principal Investigator

QIXIN Guo  Saga University, Department of Electrical and Electronic Engineering, Associate Professor, 理工学部, 助教授 (60243995)

Project Period (FY) 2004 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2006: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2005: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2004: ¥2,000,000 (Direct Cost: ¥2,000,000)
KeywordsSynchrotron radiation light / Nanostructures / Nitride semiconductors / Alumina mask / X-ray absorption fine structure / Low-temperature growth / シンクロトン放射光 / X線吸収微細構造法 / ポーラスアルミナマスク
Research Abstract

Ternary AlInN has great potential for applications in light-emitting diodes, laser diodes, and high-efficiency solar cells. Moreover, AlInN can be used as a cladding layer with no strain on a GaN-based laser diode structure, leading to a reduction of defects because it is lattice matched to GaN. However, there have been few reports on the growth of AlInN ternary, because it is difficult to grow AlInN due to the large immiscibility and difference in the thermal stability between AlN and InN. Most of its fundamental properties are still unknown. In this study, we have revealed that the Al composition in the AlInN films can be controlled and the lattice constant for c-axis obtained from the (0 0 0 2) diffraction peak of the AlInN films decreased with the increase of Al composition. Nanochannel alumina (NCA) templates with highly ordered pore arrays were prepared by anodizing pure aluminum foil in acid solutions. Cathodoluminescence measurements revealed that a blue emission band appears at around 2.8 eV and its energy position depends on measurement temperature and pore size of NCA. The shift of the blue emission band energy with temperature is ascribed to the variations of electron-phonon interactions. X-ray absorption near-edge fine structure results show that the blue emission band shift with pore size is due to the local environment change of atoms. We have also carried out the x-ray absorption near-edge fine structure measurements of AlInN at Al K edge using synchrotron radiation light and have demonstrated that the Al K-edge spectra of AlInN are the fingerprints of their composition. Self-consistent-field real-space multiple-scattering theory calculations could give a reasonable reproduction of the experimental spectral structures.

Report

(4 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • Research Products

    (27 results)

All 2007 2006 2005 2004

All Journal Article (24 results) Book (3 results)

  • [Journal Article] Reactive sputter deposition of AlInN thin films2007

    • Author(s)
      Q.X.Guo, Y.Okazaki, Y.Kume, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Journal of Crystal Growth 300

      Pages: 151-154

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Reactive sputter deposition of AlInN thin films,2007

    • Author(s)
      Q.X.Guo, Y.Okazaki, Y.Kume, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Journal of Crystal Growth 300

      Pages: 151-154

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Critical Point Transitions of Wurtzite Indium Nitride2006

    • Author(s)
      W.Z.Shen, X.D.Pu, J.Chen, H.Ogawa, Q.X.Guo
    • Journal Title

      Solid State Communication 137

      Pages: 49-52

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Growth and Depth Dependence of Visible Luminescence in Wurtzite Indium Nitride Epilayers2006

    • Author(s)
      X.D.Pu, W.Z.Shen, Z.Q.Zhang, H.Ogawa, Q.X.Guo
    • Journal Title

      Applied Physics Letters 88

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Cathodoluminescence study of anodic nanochannel alumina2006

    • Author(s)
      Q.X.Guo, Y.Hachiya, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Journal of Luminescence 119/120

      Pages: 253-257

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Growth properties of AlN films on sapphire substrates by reactive sputtering2006

    • Author(s)
      Q.X.Guo, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Vacuum 80

      Pages: 716-718

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Electron Dephasing in Wurtzite Indium Nitride Thin Films2006

    • Author(s)
      Z.W.Jia, W.Z.Shen, H.Ogawa, Q.X.Guo
    • Journal Title

      Applied Physics Letters 89

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Critical Point Transitions of Wurtzite Indium Nitride2006

    • Author(s)
      W.Z.Shen, X.D.Pu, J.Chen, H.Ogawa, Q.X Guo
    • Journal Title

      Solid State Communication 137

      Pages: 49-52

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth and Depth Dependence of Visible Luminescence in Wurtzite Indium Nitride Epilayers2006

    • Author(s)
      X.D.Pu, W.Z.Shen, Z.Q.Zhang H.Ogawa, Q.X.Guo
    • Journal Title

      Applied Physics Letters 88

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Fabrication and Characteristics of Nanostructured Materials Using Anodic Porous Alumina, Handbook of Semiconductor Nanostructures and Nanodevices2006

    • Author(s)
      Qixin Guo, Hiroshi Ogawa, Harry Ruda
    • Journal Title

      (American Scientific Publishers) Vol. 2, Chapter 13

      Pages: 407-435

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth and Depth Dependence of Visible Luminescence in Wurtzite Indium Nitride Epilayers,2006

    • Author(s)
      X.D.Pu, W.Z.Shen, Z.Q.Zhang, H.Ogawa, Q.X.Guo
    • Journal Title

      Applied Physics Letters 88

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Growth properties of AlN films on sapphire substrates by reactive sputtering,2006

    • Author(s)
      Q.X.Guo, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Vacuum 80

      Pages: 716-718

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Electron Dephasing in Wurtzite Indium Nitride Thin Films,2006

    • Author(s)
      Z.W.Jia, W.Z.Shen, H.Ogawa, Q.X.Guo
    • Journal Title

      Applied Physics Letters 89

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Cathodoluminescence study of anodic nanochannel alumina2006

    • Author(s)
      Q.X.Guo, Y.Hachiya, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Journal of Luminescence (in press)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] X-ray absorption near-edge fine structure study of AlInN semiconductors.2005

    • Author(s)
      Q.X.Guo, J.Ding, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Applied Physics letters 86

    • Related Report
      2005 Annual Research Report 2004 Annual Research Report
  • [Journal Article] Temperature dependence of Raman scattering in hexagonal indium nitride films2005

    • Author(s)
      X.D.Pu, J.Chen, W.Z.Shen, H.Ogawa, Q.X.Guo
    • Journal Title

      Journal of Applied Physics 98

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Observation of visible luminescence from indium nitride at roorm temperature2005

    • Author(s)
      Q.X.Guo, T.Tanaka, M.Nishio, H.Ogawa, X.D.Pu, W.Z.Shen
    • Journal Title

      Applied Physics Letter 86

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Optical properties of InN with stoichoimetry violation and indium clustering2005

    • Author(s)
      T.V.Shubina, et al.Q.Guo, B.Monemar, P.S.Kop'ev
    • Journal Title

      Phys.Stat.Sol.(a) 202

      Pages: 377-382

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering2005

    • Author(s)
      Q.X.Guo, M.Yoshitugu, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Thin Solid Films 483

      Pages: 16-20

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Optical properties of InN with stoichoimetry violation and indium clustering2005

    • Author(s)
      T.V.Shubina, et al.Q.Guo, B.Monemar, P.S.Kop'ev
    • Journal Title

      Phys.Stat.Sol.(c) (in press)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Extended X-ray absorption fine structure of porous morph-genetic silicon carbide2005

    • Author(s)
      J.Ding, et al., Q.X.Guo
    • Journal Title

      Nuclear Instruments and Methods in Physics Research Section B (in press)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering2005

    • Author(s)
      Q.X.Guo, M.Yoshitugu, T.Tanaka, M.Nishio, H.Ogawa
    • Journal Title

      Thin Solid films (in press)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Temperature Dependence of Refractive Index in InN Thin Films Grown by Magnetron Sputtering2004

    • Author(s)
      H.P.Zhou, W.Z.Shen, H.Ogawa, Q.X.Guo
    • Journal Title

      Journal of Applied Physics 96

      Pages: 3199-3205

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Critical Point Transitions of Wurtzite AlN in the Vacuum-Ultraviolet Spectral Range2004

    • Author(s)
      J.Chen, W.Z.Shen, H.Ogawa, Q.X.Guo
    • Journal Title

      Applied Physics Letter 84

      Pages: 4866-4868

    • Related Report
      2004 Annual Research Report
  • [Book] Handbook of Semiconductor Nanostructures and Nanodevices2006

    • Author(s)
      Qixin Guo, Hiroshi Ogawa, Harry Ruda
    • Total Pages
      28
    • Publisher
      American Scientific Publishers
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Book] Fabrication and Characteristics of Nanostructured Materials Using Anodic Porous Alumina, Handbook of Semiconductor Nanostructures and Devices2006

    • Author(s)
      Qixin Guo, Hiroshi Ogawa, Harry Ruda
    • Total Pages
      29
    • Publisher
      American Scientific Publishers
    • Related Report
      2005 Annual Research Report
  • [Book] Advanced Materials in electronics2004

    • Author(s)
      Qixin GUO (郭其新)
    • Total Pages
      304
    • Publisher
      Research Signpost
    • Related Report
      2004 Annual Research Report

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Published: 2004-04-01   Modified: 2016-04-21  

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