| Project/Area Number |
16560017
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | KANAZAWA INSTITUTE OF TECHNOLOGY |
|---|
Principal Investigator |
ISHII Makoto KANAZAWA INSTITUTE OF TECHNOLOGY, College of Engineering, Professor, 工学部, 教授 (30222946)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MIYATA Toshihiro KANAZAWA INSTITUTE OF TECHNOLOGY, College of Engineering, Associate Professor, 工学部, 助教授 (30257448)
|
|---|
| Project Period (FY) |
2004 – 2005
|
| Project Status |
Completed (Fiscal Year 2005)
|
| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2005: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2004: ¥2,200,000 (Direct Cost: ¥2,200,000)
|
|---|
| Keywords | iron disilicide / iron / vacuum deposition / thin film / silicon / epitaxy / high purity / heterojunction / oriented growth / β-FeSi2 |
|---|
| Research Abstract |
Strongly a-axis oriented (β-FeSi_2 layers on Si(001) substrates were formed when the substrates were heated at a temperature of 700℃, and iron deposition rate on Si(001) substrates was about 0.5nm/min using a vacuum evaporation method. N-type β-FeSi_2 layers were formed on Si(001) substrates at a temperature of 700℃ with evaporating different kinds of iron sources. The lowest carrier concentration is 1.3x10^<16>cm^<-3> and mobility is as high as 303cm^<-2>/Vs at room temperature. It is found from secondary ion analysis of iron sources and β-FeSi_2-formed-layers that the dominant impurity is cobalt. The influence of environment gases on the carrier concentrations in β-FeSi_2- formed-layers is also discussed. P-Si/β-FeSi_2/n-Si(001) substrate structure was formed and diodes were fabricated. The ideal factor of the current-voltage characteristics was as well as 1.27.
|
