Theoretical studies on the behaviors of impurities in high-k gate dielectrics.
| Project/Area Number |
16560020
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | University of Tsukuba |
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Principal Investigator |
SHIRAISHI Kenji University of Tsukuba, Graduate School of Pure and Applied Physics, Associate Professor, 大学院・数理物質科学研究科, 助教授 (20334039)
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| Co-Investigator(Kenkyū-buntansha) |
AKIYAMA Toru Mie University, Department of Engineering, Research Assistant, 工学部, 助手 (40362363)
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| Project Period (FY) |
2004 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2005: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2004: ¥1,700,000 (Direct Cost: ¥1,700,000)
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| Keywords | LSI / Silicon / Semiconductor / Defects / Impurity / Insulating films / High-k dielectrics / Interface Reaction / 量子論 / 理論 / 第一原理計算 / 界面 / 欠陥 / シリコンナノ構造 / Si / SiO_2界面 / High-k絶縁膜 / Si界面 / トランジスタ特性 / HfO_2 |
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| Research Abstract |
In this project, we have investigated the physical properties of defects in high-k HfO_2 dielectrics and the formation process of interface layer SiO_2 located between high-k dielectrics and Si substrates. The main results are as follows.
(1)Based on the ionic characteristic of HfO_2, we have discussed the mechanism of Fermi level pinning observed at the interface between p+poly-Si gates and high-k HfO_2 dielectrics. As a result, we have found that the oxygen vacancy formation accompanied by the partial oxidation of poly-Si gates becomes endothermic due to the energy gain of electron transfer from oxygen vacancy level in Hf02 to p+poly-Si gates, and this reaction generates the interface dipoles and Fermi level of p+ poly-Si gates elevates. Further, this reaction continues until the energy gain of this reaction decreases to zero at the pinning position.
(2)We have investigated the N incorporation effect by the first principles calculations. We have found that N incorporation deactivate the oxygen vacancy level that is located just above the conduction band bottom of Si and can be considered as a important leakage path of HfO_2 gate dielectrics. This deactivation originates from the Coulomb interaction of N impurities.
(3)We have considered the formation process of interfacial SiO_2 by the first principles calculations. We have found that the strain near the interface strongly affects the formation process of SiO_2. Since the strain release process of the formation of interfacial SiO_2 is much different from the usual silicon thermal oxidation, the formed interfacial SiO_2 characteristics should be different from ordinary thermally grown SiO_2.
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Report
(3 results)
Research Products
(94 results)
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[Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positoron beams2006
Author(s)
A.Uedono, K.Ikeuchi, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, N.Umezawa, A.Hamid, T.Chikyow, T.Ohdaira, M.Muramatsu, R.Suzuki, S.Inumiya, S.Kamiyama, Y.Akasaka, Y.Nara, K.Yamada
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Journal Title
J.Appl.Phys. 99
Pages: 54507-54507
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection-2005
Author(s)
K.Shiraishi, Y.Akasaka, S.Miyazaki, T.Nakayama, T.Nakaoka, G.Nakamura, K.Torii, H.Furutou, A.Ohta, P.Ahmet, K.Ohmori, H.Watanabe, T.Chikyow, M.L.Green, Y.Nara, K.Yamada
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Journal Title
Technical Digest of IEEE International Electron Devices Meeting, Washington D.C., USA
Pages: 43-46
NAID
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection2005
Author(s)
K.Shiraishi, Y.Akasaka, S.Miyazaki, T.Nakayama, T.Nakaoka, G.Nakamura, K.Torii, H.Furutou, A.Ohta, P.Ahmet, K.Ohmori, H.Watanabe, T.Chikyow, M.L.Green, Y.Nara, K.Yamada
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Journal Title
Technical Digest of IEEE International Electron Devices Meeting, Washington D.C., USA
Pages: 43-43
NAID
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[Journal Article] Physical model of BTI, TDDB, and SILC in HfO_2-based high-k dielectrics2004
Author(s)
K.Torii, K.Shiraishi, S.Miyazaki, K.Yamabe, M.Boero, T.Chikyow, K.Yamada, H.Kitajima, T.Arikado
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Journal Title
Tech.Digest of 2004 IEEE International Electron Device Meeting (San Francisco, USA, December 13-15, 2004)
Pages: 129-132
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004
Author(s)
K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado
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Journal Title
Tech.Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)
Pages: 108-109
Description
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[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
Author(s)
A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
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Journal Title
Jpn.J.Appl.Phys.Part 1 43
Pages: 7847-7852
NAID
Description
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[Journal Article] The Role of Nitrogen Incorporation in Hf-based High-k Dielectrics : Reduction in Electron Charge Traps
Author(s)
N.Umezawa, K.Shiraishi, K.Torii, M.Boero, T.Chikyow, H.Watanabe, K.Yamabe, T.Ohno, K.Yamada, Y.Nara
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Journal Title
Proceedings of 35^<th> European Solid-State Device Research Conference (ESSDERC 2005)(12-16 September 2005, Grenoble, France.)
Pages: 201-204
Description
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