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Research on preparations of precise-resistance thin-film materials having higher resistivity with zero-temperature dependence

Research Project

Project/Area Number 16560267
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionAkita University

Principal Investigator

SATO Yuichi  Akita University, Faculty of Engineering and Resource Science, Associate Professor, 工学資源学部, 助教授 (70215862)

Project Period (FY) 2004 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2006: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2005: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2004: ¥1,600,000 (Direct Cost: ¥1,600,000)
Keywordsthin film / sputtering / resistance
Research Abstract

In this research, preparations of novel thin film resistance materials which have small temperature coefficient of resistance (TCR) and higher resistivities compared with those of the usual materials were investigated. Firstly, effects of nitrogen, oxygen and substrate temperatures on electrical properties of ZnO : In thin films were investigated. The TCR showed minimum value when In_2O_3 was added to ZnO at 9 wt%. The resistivities decreased with increasing of N_2 partial pressure, whereas the resistivities increased with the increasing of N_2 partial pressure when it was over 20 %. Carrier concentration of the ZnO based films became high as 10^<20>cm^<-3> when Al_2O_3 was added to ZnO at 2 wt%. Resistivity of the films increase from 10^<-3> to 1 Ω・cm by adding Cu to the films, and their TCR became low within 100 ppm/℃ Moreover, resistivity of the ZnO films increased from 10^<-1> to 10^3 Ω・cm by mixing MgO to the films. Degenerated Al_2O_3 added ZnMgO films kept high carrier concentration, whereas Hall mobility of them was extremely low and their resistivity increased to about 3×10^<-3> Ω・cm. Their TCR showed within 50 ppm/℃. The resistivities showed much higher value when the substrate material was changed from sapphire single crystals to quartz glasses.

Report

(4 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • Research Products

    (13 results)

All 2007 2006 2004

All Journal Article (12 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Preparation of ZnO : Al-based thin films of various crystallinity by the RF magnetron sputtering method and their recrystallization2007

    • Author(s)
      Yuichi Sato
    • Journal Title

      Abstract of the 3^<rd> International Conference on Recrystallization and Grain Growth (to be published)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth of ZnO films on quartz glass substrates having recrystallized ZnO under layers and their crystallinities2007

    • Author(s)
      Toshifumi Suzuki
    • Journal Title

      Abstract of the 15^<th> International Conference on Grystal Growth (to be published)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth of ZnO films on quartz glass substrates having recrystallized ZnO under layers and their crystallinities2007

    • Author(s)
      Toshifumi Suzuki
    • Journal Title

      Abstract of the 15^<th> International Conference on Crystal Growth (to be published)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] AlとCuを同時に添加したZnO系薄膜の作製と電気的特性2006

    • Author(s)
      佐藤 祐一
    • Journal Title

      日本セラミクス協会2006年年会講演予稿集

      Pages: 170-170

    • NAID

      130006974950

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Investigation of ZnO based resistance materials with extremely small temperature coefficients2006

    • Author(s)
      Yuichi Sato
    • Journal Title

      Abstracts of International Conferences on Modern Materials and Technologies

      Pages: 196-196

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Investigation of ZnO based thin films as resistance materials with small temperature coefficients2006

    • Author(s)
      Yuichi Sato
    • Journal Title

      Advances in Science and Technology 45

      Pages: 2376-2381

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Preparations and electrical properties of Al, Cu co-doped ZnO thin films2006

    • Author(s)
      Yuichi Sato
    • Journal Title

      Abstracts of the Annual Meeting of the Ceramic Society of Japan 170

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Investigation of ZnO based resistance materials with extremely small temperature coefficients2006

    • Author(s)
      Yuichi Sato
    • Journal Title

      Abstracts of International Conferences on Modern Materials and Technologies 196

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] lnvestigation of ZnO based thin films as resistance materials with small temperature coefficients2006

    • Author(s)
      Yuichi Sato
    • Journal Title

      Advances in Science and Technology 45

      Pages: 2376-2381

    • Related Report
      2006 Annual Research Report
  • [Journal Article] AlとCuを同時に添加したZnO系薄膜の作製と電気的特性2006

    • Author(s)
      佐藤 祐一
    • Journal Title

      日本セラミックス協会2006年年会講演予稿集

      Pages: 170-170

    • NAID

      130006974950

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Preparations of ultra-precision resistors with ultra-high resistivity by introducing indium and nitrogen to ZnO semiconductor thin-films2004

    • Author(s)
      Yuichi Sato
    • Journal Title

      Proceedings of International Workshop on Resource Science and Engineering of Rare Metals

      Pages: 155-157

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Preparations of Ultra-Precision Resistors with Ultra-High Resistivity by Introducing Indium and Nitrogen to ZnO Semiconductor Thin-Films2004

    • Author(s)
      Yuichi Sato
    • Journal Title

      Proceedings of International Workshop on Resource Science and Engineering of Rare Metals

      Pages: 155-157

    • Related Report
      2004 Annual Research Report
  • [Patent(Industrial Property Rights)] 高抵抗薄膜抵抗体、その作製方法および抵抗素子2004

    • Inventor(s)
      佐藤牧夫 他5名
    • Industrial Property Rights Holder
      アルファ・エレクトロニクス(株)
    • Patent Publication Number
      2005-347562
    • Filing Date
      2004-06-03
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary

URL: 

Published: 2004-04-01   Modified: 2016-04-21  

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