| Project/Area Number |
16560276
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokushima |
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Principal Investigator |
TOMINAGA Kikuo The University of Tokushima, Fac.of Engineering, Associate professor, 工学部, 助教授 (10035660)
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| Co-Investigator(Kenkyū-buntansha) |
NAKABAYASHI Ichiro The Univ.of Tokushima, Faculty of Engineering, Professor, 工学部, 教授 (70035624)
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| Project Period (FY) |
2004 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2005: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2004: ¥2,800,000 (Direct Cost: ¥2,800,000)
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| Keywords | transparent conductive electrode / amorphous film / zinc oxide / indium oxide / ITO / ZnO-In_2O_3 / ZnO-SnO_2 / ZnO-SnO_2 |
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| Research Abstract |
In the research of grant-in-aid for 2004 and 2005, we deposited In_2O_3-ZnO and In_2O_3-SnO_2 films in Ar gas by facing target sputtering system using ZnO or SnO_2 target and In_2O_3 ceramic targets. We investigated their electrical and optical properties under additional Al_2O_3 or Ga_2O_3 impurities. The impurities of Al_2O_3 or Ga_2O_3 were added to ZnO targets. The discharge current of each target was changed from 0 to 80 mA and the current ratio of δ=I_<Zn>/(I_<Zn>+I_<In>) was nearly the same as the content ratio of Zn and In in the film. The influence of Ga_2O_3 wais the same as those of Al_2O_3. At the δ values of 0〜0.2,0.2-0.6,0.6-0.8 and 0.8-1.0, In_2O_3 structure, amorphous structure, homologous and ZnO structure were obtained, respectively. With increasing Ga_2O_3 or Al_2O_3, the δ values, where amorphous phase appeared, shifted to δ=0.23 to 0.67. The lowest resistiviity appeared at the amorphous phase for both cases. The incorporation of these impurities did not induce a severe influence on the amorphous phase film, although the resistiviity of homologous crystalline films increased with incorporation of these impurities. These data show that the impurities does not act as donors. The role of the impurity appeared in the enlargement of optical band gap, which improve the optical transparency at the blue region. This was induced by the internal stress with increasing Ga_2O_3 and Al_2O_3. In both films, the surface of amorphous films were smoother than those of crystalline films. These results suggest that the amorphous films have a excellent potential for future transparent conductive oxide films.
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