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Development of novel circuits consisting of magnetic tunnel junction and negative differential resistance devices

Research Project

Project/Area Number 16560289
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

UEMURA Tetsuya  Hokkaido Univ., Graduate School of Information Science and Technology, Associate Prof., 大学院・情報科学研究科, 助教授 (20344476)

Project Period (FY) 2004 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2005: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2004: ¥1,900,000 (Direct Cost: ¥1,900,000)
Keywordsmagnetic tunnel function / magnetic random access memory / resonant tunnel diode / tunnel magneto-resistance / 磁気ランダムアクセスメモリー
Research Abstract

The objective of this project is to develop novel magnetic random access memory (MRAM) cells consisting of magnetic tunnel junction (MTJ) and negative differential resistance (NDR) devices, such as an interband tunnel diode (ITD) or a resonant tunnel diode (RTD), connected in parallel or in series. The NDR characteristics of the ITD or RTD can increase the tunneling magnetoresistance (TMR) ratio of the MTJ. The peak voltages (currents) of the NDR characteristics are changed depending on the magnetization directions of the MTJ when the NDR device is connected in series (parallel), resulting in large MR ratio.
We successfully confirmed the basic operation of the proposed memory cells by both simulation and experiment. The fabricated circuit consisting of the CoFe based MTJ and GaAs based tunnel diode showed that the effective MR ratio was enhanced from its original value of 15 to 890% in the series circuit.
We also optimized the device structures. As for the MTJs, we fabricated the MTJs using half-metallic materials, such as Co-based full Heusler alloys, Perovskite-type manganites, or ferromagnetic semiconductors, and achieved relatively high TMR ratios of up to 90% at room temperature. The use of MTJs with its original TMR ratio of more than 50% results in sufficient operating margin of the bias current/voltage. As for the NDR devices, we fabricated the GaAs-based RTD with high peak-to-valley current ratio.
We developed the SPICE models for both MTJs and tunnel diodes based on the experimental results and analyzed that how the circuit performance, such as cell area, access speed, power dissipation, and operating margin, would be changed as increasing the integration density of the memory cell. Furthermore, we designed the power supply circuit based on the reference cell architecture, which was robust to the variation of device characteristics, and successfully confirmed its proper operation.

Report

(3 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • Research Products

    (34 results)

All 2006 2005 2004

All Journal Article (34 results)

  • [Journal Article] Epitaxial growth of Co_2Cr_<0.6>Fe_<0.4>Al Heusler alloy thin films on MgO(001) substrates by magnetron sputtering2006

    • Author(s)
      Ken-ichi Matsuda
    • Journal Title

      J.Crystal Growth 286

      Pages: 389-393

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication of fully epitaxial magnetic tunnel junctions using cobalt-based full-Heusler alloy thin film and their tunnel magnetoresistance characteristics2006

    • Author(s)
      Masafumi Yamamoto
    • Journal Title

      J.Phys.D 39

      Pages: 824-833

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Analysis of anisotropic tunnel magneto-resistance of (Ga,Mn)As/AlAs/(Ga,Mn)As magnetic tunnel junction2006

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      Physica E 32

      Pages: 383-386

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Structural and magnetic properties of epitaxially grown full-Heusler alloy Co_2MnGe thin films deposited using magnetron sputtering2006

    • Author(s)
      Takashi Ishikawa
    • Journal Title

      J.Appl.Phys. 99

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co_2MnGe thin film and MgO tunnel barrier2006

    • Author(s)
      Takao Marukame
    • Journal Title

      J.Appl.Phys. 99

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Epitaxial growth of Co_2Cr_<0.6>Fe_<0.4>Al Heusler alloy thin films on MgO (001) substrates by magnetron sputtering2006

    • Author(s)
      K.Matsuda, T.Kasahara, T.Marukame, T.Uemura, M.Yamamoto
    • Journal Title

      J.Crystal Growth. 286

      Pages: 389-393

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication of fully epitaxial magnetic tunnel junctions using cobalt-based full-Heusler alloy thin film and their tunnel magnetoresistance characteristics2006

    • Author(s)
      M.Yamamoto, T.Marukame, T.Ishikawa, K.Matsuda, T.Uemura, M.Arita
    • Journal Title

      J.Phys.D. 39

      Pages: 824-833

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Analysis of anisotropic tunnel magneto-resistance of (Ga,Mn)As/AlAs/(Ga,Mn)As magnetic tunnel junction2006

    • Author(s)
      T.Uemura, R.Miura, T.Sone, T.Yamazuki, K.Matsuda, M.Yamamoto
    • Journal Title

      Physica E. 32,Issues1-2

      Pages: 383-386

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Structural and magnetic properties of epitaxially grown full-Heusler alloy Co_2MnGe thin films deposited using magnetron sputtering2006

    • Author(s)
      T.Ishikawa, T.Marukame, K.Matsuda, T.Uemura, M.Arita, M.Yamamoto
    • Journal Title

      J.Appl.Phys. 99

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co_2MnGe thin film and MgO tunnel barrier2006

    • Author(s)
      T.Marukame, T.Ishikawa, K.Matsuda, T.Uemura, M.Yamamoto
    • Journal Title

      J.Appl.Phys. 99

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Epitaxial growth of Co_2Cr_<0.6>Fe_<0.4>Al Heusler alloy thin films on MgO (001) substrates by magnetron sputtering2006

    • Author(s)
      Ken-ichi Matsuda
    • Journal Title

      J.Crystal Growth 286

      Pages: 389-393

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Analysis of anisotropic tunnel magneto-resistance of (Ga,Mn)As/AlAs/(Ga,Mn)As magnetic tunnel junction2006

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      Physica E 31(未定)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Structural and magnetic properties of epitaxially grown full-Heusler alloy Co_2MnGe thin films deposited using magnetron sputtering2006

    • Author(s)
      Takashi Ishikawa
    • Journal Title

      J.Appl.Phys. 99(未定)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co_2MnGe thin film and MgO tunnel barrier2006

    • Author(s)
      Takao Marukame
    • Journal Title

      J.Appl.Phys. 99(未定)

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Magnetic and Electrical Properties of (La, Sr)MnO_3 Sputtered on SrTiO_3-buffered Si Substrate2005

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 2604-2607

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication of Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co_2Cr_<0.6>Fe_<0.4>Al Thin Film and MgO Tunnel Barrier2005

    • Author(s)
      Takao Marukame
    • Journal Title

      Jpn.J.Appl.Phys. 44

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Four-Valued Magnetic Random Access Memory Based on Magneto Tunnel Junction and Resonant Tunneling Diode2005

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      International Journal of Multiple-Valued Logic and Soft Computing 11

      Pages: 467-479

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Epitaxial Growth of Fe/MgO/Fe Heterostructures on SrTiO_3(001) Substrates by Magnetron Sputtering2005

    • Author(s)
      Takao Marukame
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 6012-6015

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] マグネトロンスパッタ法によるホイスラー合金Co_2Cr_<0.6>Fe_<0.4>Al薄膜のエピタキシャル成長と磁気特性評価2005

    • Author(s)
      笠原貴志
    • Journal Title

      日本応用磁気学会誌 29

      Pages: 895-899

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] High Tunnel Magnetoresistance in Epitaxial Co_2Cr_0.6Fe_0.4Al/MgO/CoFe Tunnel Junctions2005

    • Author(s)
      Takao Marukame
    • Journal Title

      IEEE Trans. on Mag. 41

      Pages: 2603-2605

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Magnetic Anisotropy Study for GaMnAs-based Magnetic Tunnel Junction2005

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      Jpn.J.Appl.Phys. 44

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Magnetic and Electrical Properties of (La,Sr)MnO_3 Sputtered on SrTiO_3-buffered Si Substrate2005

    • Author(s)
      T.Uemura, K.Sekine, K.Matsuda, M.Yamamoto
    • Journal Title

      Jpn.J.Appl.Phys. 44,No.4B

      Pages: 2604-2607

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fabrication of Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co_2Cr_<0.6>Fe_<0.4>Al Thin Film and MgO Tunnel Barrier2005

    • Author(s)
      T.Marukame, T.Kasahara, K.Matsuda, T.Uemura, M.Yamamoto
    • Journal Title

      Jpn.J.Appl.Phys. 44,No.17

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Four-Valued Magnetic Random Access Memory Based on Magneto Tunnel Junction and Resonant Tunneling Diode2005

    • Author(s)
      T.Uemura, M.Yamamoto
    • Journal Title

      International Journal of Multiple-Valued Logic and Soft Computing (MVLJ) 11,No.5-6

      Pages: 467-479

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Epitaxial Growth of Fe/MgO/Fe Heterostructures on SrTiO_3(001) Substrates by Magnetron Sputtering2005

    • Author(s)
      T.Marukame, K.Matsuda, T.Uemura, M.Yamamoto
    • Journal Title

      Jpn.J.Appl.Phys. 44,No.8

      Pages: 6012-6015

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Epitaxial Growth of Heusler Alloy Co_2Cr_<0.6>Fe_<0.4>Al Thin Films by Magnetron Sputtering (in Japanese)2005

    • Author(s)
      T.Kasahara, K.Matsuda, T.Marukame, T.Uemura, M.Yamamoto
    • Journal Title

      J.Magn.Soc.Jpn. 29,No.9

      Pages: 895-899

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] High Tunnel Magnetoresistance in Epitaxial Co_2Cr_<0.6>Fe_<0.4>Al/MgO/CoFe Tunnel Junctions2005

    • Author(s)
      T.Marukame, T.Kasahara, K.Matsuda, T.Uemura, M.Yamamoto
    • Journal Title

      IEEE Trans.on Mag. 41,No.10

      Pages: 2603-2605

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Magnetic Anisotropy Study for GaMnAs-based Magnetic Tunnel Junction2005

    • Author(s)
      T.Uemura, T.Sone, K.Matsuda, M.Yamamoto
    • Journal Title

      Jpn.J.Appl.Phys. 44, No.44

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Magnetic and Electrical Properties of (La,Sr)MnO_3 Sputtered on SrTiO_3-buffered Si Substrate2005

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 2604-2607

    • Related Report
      2005 Annual Research Report
  • [Journal Article] High Tunnel Magnetoresistance in Epitaxial Co_2Cr_<0.6>Fe_<0.>4Al/MgO/CoFe Tunnel Junctions2005

    • Author(s)
      Takao Marukame
    • Journal Title

      IEEE Trans.on Mag. 41

      Pages: 2603-2605

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Four-Valued Magnetic Random Access Memory Based on Magneto Tunnel Junction and Resonant Tunneling Diode2005

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      International Journal of Multiple-Valued Logic and Soft Computing 11(未定)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Magnetic and Electrical Properties of (La,Sr)MnO_3 Sputtered on SrTiO_3-buffered Si Substrate2005

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      Jpn.J.Appl.Phys. 44・No4B(未定)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device2004

    • Author(s)
      Tetsuya Uemura
    • Journal Title

      Jpn.J.Appl.Phys. 43・No4B

      Pages: 2114-2117

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary 2004 Annual Research Report
  • [Journal Article] Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device2004

    • Author(s)
      T.Uemura, S.Honma, T.Marukame, M.Yamamoto
    • Journal Title

      Jpn.J.Appl.Phys. 43,No.4B

      Pages: 2114-2117

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary

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Published: 2004-04-01   Modified: 2016-04-21  

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