| Project/Area Number |
16560304
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | University of Hyogo |
|---|
Principal Investigator |
TAKAYAMA Yoichiro University of Hyogo, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (90336826)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
FUJITA Takayuki University of Hyogo, Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (50336830)
MAENAKA Kazusuke University of Hyogo, Graduate School of Engineering, associate Professor, 大学院・工学研究科, 助教授 (70173721)
|
|---|
| Project Period (FY) |
2004 – 2005
|
| Project Status |
Completed (Fiscal Year 2005)
|
| Budget Amount *help |
¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2005: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2004: ¥2,200,000 (Direct Cost: ¥2,200,000)
|
|---|
| Keywords | Microwave power amplifier / Doherty amplifier / Amplifier circuit design / Si MOSFET / Intermodulation distortion / ドハティ増幅器 / 増幅回路設計法 |
|---|
| Research Abstract |
A practical design method of microwave Doherty amplifiers is proposed. The Doherty amplifier consists of a carrier amplifier (typically class-B) and a peak amplifier (typically class-C), which are coupled directly at the output. A general circuit condition to add exactly output powers of m amplifiers connected directly to a common output load at a given input power level is presented. The condition is applied to design microwave Doherty amplifiers. Microwave Doherty amplifiers consisting of power Si MOSFETs are designed and fabricated at 800 MHz band, and their superior performance over a wide range of output power is confirmed by circuit simulation and experimental consideration. The Doherty power amplifiers with unequal input power-split are also investigated. The unequal power-split circuit is of Wilkinson divider type. The design method of the Doherty amplifier with unequal input powers to the carrier amplifier and the peak amplifier is presented. 800 MHz Si MOSFET Doherty power amplifiers are designed, fabricated and their performances are estimated. Unequal power input configuration realizes more flexible microwave power amplifier circuit design and better performances of power amplifiers can be expected.
|
