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Study on yellow/green semiconductor laser diodes

Research Project

Project/Area Number 16560308
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionSophia University

Principal Investigator

NOMURA Ichirou  Sophia University, Faculty of Science and Technology, Lecturer (00266074)

Co-Investigator(Kenkyū-buntansha) KISHINO Katsumi  Sophia University, Faculty of Science and Technology, Professor (90134824)
KIKUCHI Akihiko  Sophia University, Faculty of Science and Technology, Lecturer (90266073)
Project Period (FY) 2004 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2006: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2005: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2004: ¥2,100,000 (Direct Cost: ¥2,100,000)
Keywordsgreen emission / yellow emission / semiconductor laser diode / II-VI compound semiconductor / InP substrate / superlattice / n-tvne cloning / light emitting diode / レーザ / BeZnSeTe / BeZnCdSe / 超寿命動作 / ZnCdSe / タイプIIヘテロ接合 / 量子井戸 / フォトルミネッセンス / MgZnCdSe / 分子線エピタキシー / 寿命特性 / 可視光
Research Abstract

We investigated Be composition dependencies of the luminescence property of BeZnSeTe II-VI compound semiconductors grown on InP substrates, resulting in obtaining bright luminescence in green region. Then we proposed a MgSe/BeZnSeTe superlattice(SL) barrier layer to confine carriers and optical field into the BeZnSeTe active layer, and improved the growth conditions such as the Zn irradiation at the SL interfaces. Based on these results, we fabricated light emitting devices. The device consisted of a BeZnSeTe quantum well active layer sandwiched by MgSe/BeZnSeTe SL barrier layers, MgSe/ZnCdSe SL n-cladding, and MgSe/BeZnTe SL p-cladding layers. In order to reduce the hetero barrier at the type-II hetero junction of the n-cladding and the n-barrier layers, we introduced a MgSe/ZnCdSe graded SL structure into the hetero junction. In the graded SL, the MgSe layer thickness ratio was gradually increased from 40 to 60 % along the growth direction from the n-cladding to the n-barrier side. By current injections, we observed green emissions around 530 nm. By aging tests of the devices under direct current injections, we obtained long life operations beyond 4800 h with no catastrophic degradation.
In addition, we developed new p-cladding layer materials. We proposed a new doping technology that is inserting high p-doped ZnTe or ZnSeTe layers at regular intervals into ZnCdSe and MgSe/ZnCdSe SL layers which are inferior in p-doping, and experimentally proved the technology to be effective for p-doping. For example, the p-doping concentration of ZnCdSe which had been about 31016 cm-3 before was remarkably improved to be 8×1017 cm-3 using the technology. In the case of the MgSe/ZnCdSe SL, a high p-doping concentration of 4.6×1017 cm-3 was obtained at a wide bandgap of 2.33 eV. Applying the doping technology for the p-cladding layer, we fabricated light emitting devices. Consequently we obtained orange emissions around 600 nm.

Report

(4 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • 2004 Annual Research Report
  • Research Products

    (20 results)

All 2007 2006 2005 2004

All Journal Article (17 results) Patent(Industrial Property Rights) (3 results)

  • [Journal Article] Zn irradiation effects in MBE growth of MgSe/BeZnSeTeII-VI compound superlattices on InP substrates2007

    • Author(s)
      Ichirou Nomura
    • Journal Title

      Journal of Crystal Growth Vol.301-302

      Pages: 273-276

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Zn irradiation effects in MBE growth of MgSeBeZnSeTe II-VI compound superlattices on InP substrates2007

    • Author(s)
      Ichirou, Nomura, Tomohiro, Yamazaki, Hiroaki, Hayashi, Koichi, Hayami, Masaki, Kato, Katsumi, Kishino
    • Journal Title

      Journal of Crystal Growth Vol. 301-302

      Pages: 273-276

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II-VI compound superlattices on InP substrates2007

    • Author(s)
      Ichirou Nomura
    • Journal Title

      Journal of Crystal Growth 301/302

      Pages: 273-276

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Yellow-green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates2006

    • Author(s)
      Ichirou Nomura
    • Journal Title

      physica status solidi(b) Vol.243,No.4

      Pages: 955-958

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Long life operations over 5000 hours of BeZnSeTe/MgZnCdSe visible light emitting diodes on InP substrates2006

    • Author(s)
      Ichirou Nomura
    • Journal Title

      physica status solidi(b) Vol.243,No.4

      Pages: 924-928

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] High p-type doping of MgZnCdSe on InP substrates by inserting ZnTe thin layers2006

    • Author(s)
      Takumi Saitoh
    • Journal Title

      physica status solidi(c) Vol.3,No.4

      Pages: 857-860

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Yellow-green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates2006

    • Author(s)
      Ichirou, Nomura, Asuka, Manoshiro, Akihiko, Kikuchi, Katsumi, Kishino
    • Journal Title

      physica status solidi(b) Vol. 243, No. 4

      Pages: 955-958

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Long life operations over 5000 hours of BeZnSeTe/MgZnCdSe visible light emitting diodes on InP substrates2006

    • Author(s)
      Ichirou, Nomura, Yuki, Nakai, Koichi, Hayami, Takumi, Saitoh, Katsumi, Kishino
    • Journal Title

      physica status solidi(b) Vol. 243, No. 4

      Pages: 924-928

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] High p-type doping of MgZnCdSe on InP substrates by inserting ZnTe thin layers2006

    • Author(s)
      Takumi, Saitoh, Ichirou, Nomura, Kan, Sueoka, Akihiko, Kikuchi, Katsumi, Kishino
    • Journal Title

      physica status solidi(c) Vol. 3, No. 4

      Pages: 857-860

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Yellow-green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates2006

    • Author(s)
      Ichirou Nomura
    • Journal Title

      physica status solidi(b) Vol.243 No.4

      Pages: 955-958

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Long life operations over 5000 hours of BeZnSeTe/MgZnCdSe visible light emitting diodes on InP substrates2006

    • Author(s)
      Ichirou Nomura
    • Journal Title

      physica status solidi(b) Vol.243 No.4

      Pages: 924-928

    • Related Report
      2005 Annual Research Report
  • [Journal Article] High p-type doping of MgZnCdSe on InP substrates by inserting ZnTe thinlayers2006

    • Author(s)
      Takumi Saitoh
    • Journal Title

      physica status solidi(c) Vol.3 No.4

      Pages: 857-860

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Characterization of ZnCdSeTe/MgZnSeTe materials for ZnTe-based visible optical devices2004

    • Author(s)
      Ichirou Nomura
    • Journal Title

      physica status solidi (b) Vol.241,No.3

      Pages: 483-486

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Proposal of a novel BeZnSeTe quaternary for II-VI middle range visible light emitting devices on InP substrates2004

    • Author(s)
      Yasushi Takashima
    • Journal Title

      physica status solidi (b) Vol.241,No.3

      Pages: 747-750

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Development of yellow-green LEDs and LDs using MgZnCdSe-BeZnTe superlattices on InP substrates by MBE2004

    • Author(s)
      Song-Bek Che
    • Journal Title

      physica status solidi (b) Vol.241,No.3

      Pages: 739-746

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Yellow-green emitters based on beryllium-chalcogenides on InP substrates2004

    • Author(s)
      Katsumi Kishino
    • Journal Title

      physica status solid (c) Vol.1,No.6

      Pages: 1477-1486

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Aging Characteristics of II-VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates2004

    • Author(s)
      Yuki Nakai
    • Journal Title

      physica status solidi (a) Vol.201,No.12

      Pages: 2708-2711

    • Related Report
      2004 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体レーザ2006

    • Inventor(s)
      野村一郎, 岸野克巳, 中村均, 大歳創, 紀川健, 藤崎寿美子, 田中滋久, 朝妻庸紀
    • Industrial Property Rights Holder
      上智大学
    • Industrial Property Number
      2006-228808
    • Filing Date
      2006-08-25
    • Related Report
      2006 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体積層構造および半導体素子2006

    • Inventor(s)
      野村一郎, 岸野克巳, 中村均, 朝妻庸紀
    • Industrial Property Rights Holder
      上智大学
    • Industrial Property Number
      2006-253765
    • Filing Date
      2006-09-20
    • Related Report
      2006 Annual Research Report
  • [Patent(Industrial Property Rights)] InP基板を有する光半導体装置2005

    • Inventor(s)
      野村一郎, 岸野克巳, 玉村好司, 中村均
    • Industrial Property Rights Holder
      上智大学
    • Filing Date
      2005-09-06
    • Related Report
      2005 Annual Research Report

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Published: 2004-04-01   Modified: 2016-04-21  

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