| Budget Amount *help |
¥41,990,000 (Direct Cost: ¥32,300,000、Indirect Cost: ¥9,690,000)
Fiscal Year 2019: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2018: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2017: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2016: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
|
|---|
| Outline of Final Research Achievements |
We have fabricated various ferromagnet/semiconductor hybrid structures and investigated their spin-related properties and applications. We have successfully grown p-type and n- type ferromagnetic semiconductors (p-GaFeSb, n-InFeSb) with high curie temperature (Tc > 300 K). We discovered new magnetotransport phenomena (proximity giant magnetoresistance) in InAs/(Ga,Fe)As bilayer heterostructures, and this magnetoresistance can be controlled by applying a gate voltage in a transistor structure by shifting the position of the wave function of electron carriers in the InAs quantum well. We realized many other new functionalities in various ferromagnet/semiconductor hybrid structures created in this work. Furthermore, we have fabricated and vertical and lateral spin transistors and have demonstrated their device operations.
|
