| Budget Amount *help |
¥45,760,000 (Direct Cost: ¥35,200,000、Indirect Cost: ¥10,560,000)
Fiscal Year 2018: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2017: ¥13,000,000 (Direct Cost: ¥10,000,000、Indirect Cost: ¥3,000,000)
Fiscal Year 2016: ¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
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| Outline of Final Research Achievements |
We have demonstrated new experimental results concerning the oxidation mechanism of SiGe and Ge through this Kiban-kenkyu. It has been experimentally elucidated that the oxidation of Ge is significantly different from that of Si in terms of oxidant species. O2 diffusion is the main contribution in case of Si, as described by the Deal-Grove model but is atomic O in case of Ge. Furthermore, the oxygen diffusion inside GeO2 film is significantly suppressed under high-pressure O2. It is also clarified that the oxidation of SiGe is different from Si or Ge, and the reaction scheme changes with oxidation. The result is related with a difference of thermodynamic stability between SiO2 and GeO2. Once SiO2 is formed on SiGe, Ge in SiGe is not actually oxidized anymore. This should be considered in SiGe oxidation.
Precise process control based on these fundamental considerations is required in order to achieve high performance Ge and SiGe gate stacks.
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