| Budget Amount *help |
¥43,680,000 (Direct Cost: ¥33,600,000、Indirect Cost: ¥10,080,000)
Fiscal Year 2020: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2019: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2018: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2017: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
Fiscal Year 2016: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
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| Outline of Final Research Achievements |
In this research, to achieve ultra-high efficiency emission in the deep ultraviolet region (wavelength: 210 to 300 nm) from a nitride semiconductor AlGaN, we elucidated and suppressed the non-radiative recombination process and enhanced the radiation recombination process. Regarding the former, it was found that the Al vacancies are the main non-radiative recombination centers in the conventional AlGaN-based quantum well. The understanding of the mechanism of introducing line defects was also advanced. Searching for crystal growth conditions and proposing new device structures led to the suppression of non-radiative recombination. Regarding the latter, we tried to control the polarization by using a novel crystal plane and demonstrated the enhancement of radiation recombination. Through these studies, we were able to raise the internal quantum efficiency, which was estimated to be about 0.1% at the start of the study, to about 50%.
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