| Budget Amount *help |
¥44,460,000 (Direct Cost: ¥34,200,000、Indirect Cost: ¥10,260,000)
Fiscal Year 2019: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2018: ¥13,000,000 (Direct Cost: ¥10,000,000、Indirect Cost: ¥3,000,000)
Fiscal Year 2017: ¥13,000,000 (Direct Cost: ¥10,000,000、Indirect Cost: ¥3,000,000)
Fiscal Year 2016: ¥11,050,000 (Direct Cost: ¥8,500,000、Indirect Cost: ¥2,550,000)
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| Outline of Final Research Achievements |
We explored optical and/or electric-field control of pure spin current transport. First, we developed electrical spin injection and detection techniques in germanium (Ge)-based lateral spin-valve devices for modulation of the spin resistance in the Ge channel layer. Next, we found that the spin relaxation mechanism in n-type Ge is governed by the inter-valley spin-flip scattering. In particular, the donor impurity concentration affected strongly the spin lifetime in n-Ge. By irradiation of lights into n-Ge, we have observed the modulation in the pure-spin-current transport signals at low temperatures.
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