| Budget Amount *help |
¥43,680,000 (Direct Cost: ¥33,600,000、Indirect Cost: ¥10,080,000)
Fiscal Year 2019: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2018: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2017: ¥24,050,000 (Direct Cost: ¥18,500,000、Indirect Cost: ¥5,550,000)
Fiscal Year 2016: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
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| Outline of Final Research Achievements |
As a new class of technology to carry out doping of electrically active atoms in silicon carbide, irradiation of laser light to silicon carbide immersed in a solution which contains chemical compound with atoms to dope or to silicon carbide whose surface was coated with a film made of a material containing atoms to dope has been investigated. It was found that this new simple method is able to dope electrically active atoms near the surface region of silicon carbide to much higher concentration than achieved by the existing technology. As the result, it has been demonstrated that this new method provides approximately a one- hundredth lower resistance at the metal/silicon-carbide contact. A method of area-selective doping has been also developed and applied to fabrication of power diode.
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