• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Development of ultra-wide band near-infrared wavelength swept light source using InAs quantum dots and its application to OCT

Research Project

Project/Area Number 16H03858
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Crystal engineering
Research InstitutionWakayama University

Principal Investigator

Ozaki Nobuhiko  和歌山大学, システム工学部, 准教授 (30344873)

Co-Investigator(Kenkyū-buntansha) 池田 直樹  国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 主任エンジニア (10415771)
久保 隆史  和歌山県立医科大学, 医学部, 准教授 (30316096)
赤阪 隆史  和歌山県立医科大学, 医学部, 教授 (70322584)
Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2018: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2017: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2016: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Keywords量子ドット / 分子線エピタキシー / 近赤外光源 / 光コヒーレンストモグラフィー / 近赤外波長掃引光源 / 光コヒーレンストモグラフィー(OCT) / 結晶工学 / 分子線エピタキシー(MBE) / OCT / 波長掃引光源 / 近赤外波長光源 / 医療イメージング / 近赤外広帯域光源 / 分子線エピタキシー(MBE) / MBE
Outline of Final Research Achievements

We have developed a tunable laser based on self-assembled InAs quantum dots (QDs) for swept-source optical coherence tomography (SS-OCT) applications. Self-assembled InAs QDs grown on GaAs have an inherent size distribution resulting in a near-infrared broadband gain spectrum; thus, the QD-based tunable laser is suitable for application to SS-OCT light sources realizing high axial resolution and large imaging depth. We fabricated a tunable laser based on InAs QDs and demonstrated its effectiveness in OCT applications in terms of high-axial-resolution and large imaging depth.

Academic Significance and Societal Importance of the Research Achievements

本研究によって開発された自己組織化InAs量子ドットベースの波長掃引光源(SS)およびその光源を用いたSS-OCTは、既存のOCTでは困難であった高分解能と高深達度の両立の可能性を示した。この成果により、今後、従来のOCTを超えた性能を有する医療診断ツール開発や、半導体ベースの光源を活かした小型・軽量なOCTの開発などの新たな応用展開が期待される。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (33 results)

All 2019 2018 2017 2016 Other

All Int'l Joint Research (3 results) Journal Article (4 results) (of which Int'l Joint Research: 3 results,  Peer Reviewed: 3 results,  Acknowledgement Compliant: 1 results) Presentation (22 results) (of which Int'l Joint Research: 8 results,  Invited: 4 results) Remarks (2 results) Patent(Industrial Property Rights) (2 results)

  • [Int'l Joint Research] University of Glasgow(英国)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] グラスゴー大学(英国)

    • Related Report
      2017 Annual Research Report
  • [Int'l Joint Research] Univ. of Glasgow/Univ. of Sheffield(英国)

    • Related Report
      2016 Annual Research Report
  • [Journal Article] Development of a broadband superluminescent diode based on self-assembled InAs quantum dots and demonstration of high-axial-resolution optical coherence tomography imaging2019

    • Author(s)
      Nobuhiko Ozaki, Sho Yamauchi, Yuma Hayashi, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, Kenji Furuki, Yoichi Oikawa, Kunio Miyaji, David T. D. Childs, and Richard A. Hogg
    • Journal Title

      J. Phys. D: Appl. Phys.

      Volume: 52 Issue: 22 Pages: 2251051-9

    • DOI

      10.1088/1361-6463/ab0ea5

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Tunable external cavity laser diode based on wavelength controlled self-assembled InAs quantum dots for swept-source optical coherence tomography applications at 1100 nm wavelength band2019

    • Author(s)
      Nobuhiko Ozaki, David Childs, Aleksandr Boldin, Daigo Ikuno, Katsuya Onoue,Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, and Richard Hogg
    • Journal Title

      Proc. SPIE

      Volume: 10939 Pages: 10939111-6

    • DOI

      10.1117/12.2509984

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Growth of quantum three-dimensional structure of InGaAs emitting at ~1 um applicable for a broadband near-infrared light source2017

    • Author(s)
      Nobuhiko Ozaki, Shingo Kanehira, Yuma Hayashi, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, and Richard A. Hogg
    • Journal Title

      J. Cryst. Growth

      Volume: 477 Pages: 230-234

    • DOI

      10.1016/j.jcrysgro.2016.11.104

    • Related Report
      2017 Annual Research Report 2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] 自己組織化InAs量子ドットを用いた近赤外広帯域光源─高分解能光コヒーレンストモグラフィーへの応用─2017

    • Author(s)
      尾崎 信彦
    • Journal Title

      月刊オプトロニクス

      Volume: 36 Pages: 101-106

    • Related Report
      2016 Annual Research Report
    • Acknowledgement Compliant
  • [Presentation] Tunable external-cavity laser diode based on self-assembled InAs quantum dots for swept-source optical coherence tomography applications at 1100 nm2019

    • Author(s)
      Nobuhiko Ozaki, David Childs, Aleksandr Boldin, Daigo Ikuno, Katsuya Onoue, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, and Richard Hogg
    • Organizer
      SPIE Photonics West 2019
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 発光波長制御InAs量子ドットを用いた1.1um帯外部共振器型波長可変レーザー2019

    • Author(s)
      尾崎 信彦、David Childs、Aleksandr Boldin、生野 大吾、尾上 克也、大里 啓孝、渡辺 英一郎、池田 直樹、杉本 喜正、Richard Hogg
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] DWELL構造におけるInAs量子ドット成長に対するIn偏析の影響2019

    • Author(s)
      岡田 直樹、生野 大吾、王 涛、大河内 俊介、尾崎 信彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] InGaAs Layers Grown on GaAs with Optimized Growth Conditions to Obtain Broadband Emission Spectra Centered at 1.05 um2018

    • Author(s)
      N. Ozaki, S. Kanehira, S. Ohkouchi, H. Ohsato, E. Watanabe, N. Ikeda, and Y.Sugimoto
    • Organizer
      20th Int. Conf. Molecular Beam Epitaxy (MBE2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of InAs QDs Buried in a Capping Layer by Time-Resolved Reflection High Energy Electron Diffraction Intensity Measurements2018

    • Author(s)
      D. Ikuno and N. Ozaki
    • Organizer
      20th Int. Conf. Molecular Beam Epitaxy (MBE2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InAs量子ドットを用いた波長掃引光源開発とSS-OCTへの応用2018

    • Author(s)
      尾崎 信彦
    • Organizer
      第21回光科学若手研究会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] 自己組織化InAs/GaAs量子ドットを用いた近赤外広帯域光源デバイス開発と光コヒーレンストモグラフィーへの応用2018

    • Author(s)
      尾崎 信彦
    • Organizer
      応用物理学会関西支部平成30年度第1回講演会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] InAs量子ドット波長可変光源を用いたSwept Source-OCTの構築およびOCT画像深達度拡大の検証2018

    • Author(s)
      山内 翔、尾崎 信彦、大里 啓孝、渡辺 英一郎、池田 直樹、杉本 喜正、古城 健司、宮地 邦男、及川 陽一、David Childs、Richard Hogg
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 波長掃引光源用InAs量子ドットベース利得チップの作製と特性評価2018

    • Author(s)
      尾上 克也、生野 大吾、山内 翔、尾崎 信彦、大里 啓孝、渡辺 英一郎、池田 直樹、杉本 喜正、古城 健司、及川 陽一、宮地 邦男、D. T. D. Childs、R. A. Hogg
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] RHEED強度計測によるキャップ層埋め込みInAs量子ドットの特性評価2018

    • Author(s)
      生野 大吾、尾崎 信彦
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 3次元界面構造を持つInGaAs薄膜からの1um帯高輝度・広帯域発光2017

    • Author(s)
      兼平 真吾、林 佑真、尾崎 信彦、大河内 俊介、池田 直樹、杉本 喜正、Richard A. Hogg
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-17
    • Related Report
      2016 Annual Research Report
  • [Presentation] 量子ドットSLD光源を用いた高分解能OCT画像取得2017

    • Author(s)
      山内 翔、尾崎 信彦、大里 啓孝、渡辺 英一郎、池田 直樹、杉本 喜正、古城 健司、宮地 邦男、David Childs、Richard Hogg
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-16
    • Related Report
      2016 Annual Research Report
  • [Presentation] As2分子線を用いて成長したInAs量子ドットへのGaAs キャップによる構造変化2017

    • Author(s)
      林 佑真、尾崎 信彦、大河内 俊介、池田 直樹、杉本 喜正
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-15
    • Related Report
      2016 Annual Research Report
  • [Presentation] InAs/GaAs quantum dots grown using As2 source in molecular beam epitaxy for near-infrared broadband light source application2017

    • Author(s)
      Nobuhiko Ozaki, Yuma Hayashi, Shunsuke Ohkouchi, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto
    • Organizer
      The Collaborative Conference on Crystal Growth (EMN 3CG 2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] High-axial-resolution Optical Coherence Tomography Imaging Using Broadband Superluminescent Diodes Based on Self-assembled InAs Quantum Dots2017

    • Author(s)
      S. Yamauchi, H. Shibata, N. Ozaki, N. Ikeda, Y. Sugimoto, K. Furuki, Y. Oikawa, K.Miyaji, D. T. D. Childs, and R. A. Hogg
    • Organizer
      The 24th Congress of the International Comission for Optics (ICO-24)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InAs量子ドットを用いたスーパールミネッセントダイオードの温度および注入電流依存性評価2017

    • Author(s)
      尾上 克也, 尾崎 信彦, 渡辺 英一郎, 大里 啓孝, 池田 直樹, 杉本 喜正, D. Childs, R. Hogg
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 成長条件最適化によるGaAs基板上InGaAs薄膜からの1um帯高輝度・広帯域発光の実現2017

    • Author(s)
      兼平 真吾, 尾崎 信彦, 大河内 俊介, 池田 直樹, 杉本 喜正
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会
    • Related Report
      2017 Annual Research Report
  • [Presentation] キャップ層埋め込み時の InAs量子ドットからのRHEED強度計測による特性評価2017

    • Author(s)
      生野 大吾, 尾崎 信彦
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会
    • Related Report
      2017 Annual Research Report
  • [Presentation] As2分子線を用いて成長したInAs量子ドットへのGaAsキャップの影響2016

    • Author(s)
      林 佑真、尾崎 信彦、大河内 俊介、池田 直樹、杉本 喜正
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟市
    • Year and Date
      2016-09-15
    • Related Report
      2016 Annual Research Report
  • [Presentation] High-Intensity and Broadband Emission Centered at ~1 um from InGaAs 3D Nanostructures Formed by High-Temperature Molecular-Beam-Epitaxy Growth2016

    • Author(s)
      N. Ozaki, S. Kanehira, Y. Hayashi, S. Ohkouchi, N. Ikeda, Y. Sugimoto
    • Organizer
      19th Int. Conf. Molecular Beam Epitaxy (MBE2016)
    • Place of Presentation
      Montpellier, France
    • Year and Date
      2016-09-05
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] High axial resolution imaging of OCT using a broadband NIR superluminescent diode based on self-assembled InAs quantum dots2016

    • Author(s)
      Nobuhiko Ozaki
    • Organizer
      The 2016 Int. Symp. Adv. Mat. Res. (ISAMR 2016)
    • Place of Presentation
      Sun Moon Lake, Taiwan
    • Year and Date
      2016-08-12
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Emission wavelength variation of InAs quantum dots grown on GaAs using As2 molecules in molecular beam epitaxy2016

    • Author(s)
      Yuma Hayashi, Nobuhiko Ozaki, Shunsuke Ohkouchi, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, and Yoshimasa Sugimoto
    • Organizer
      The 43rd Int. Symp. Compound Semiconductor (ISCS2016)
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-27
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Remarks] 和歌山大学システム工学部 光機能・ナノ材料Gr.(尾崎研究室)

    • URL

      http://www.wakayama-u.ac.jp/~ozaki/

    • Related Report
      2017 Annual Research Report
  • [Remarks] 和歌山大学システム工学部 光機能・ナノ材料Gr.(尾崎研究室)

    • URL

      http://www.wakayama-u.ac.jp/~ozaki/index.html

    • Related Report
      2016 Annual Research Report
  • [Patent(Industrial Property Rights)] 特許権2018

    • Inventor(s)
      尾崎信彦、生野大吾
    • Industrial Property Rights Holder
      尾崎信彦、生野大吾
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2018-002667
    • Filing Date
      2018
    • Related Report
      2017 Annual Research Report
  • [Patent(Industrial Property Rights)] 光デバイス及び光デバイスの製造方法2017

    • Inventor(s)
      尾崎信彦、兼平真吾、林 佑真
    • Industrial Property Rights Holder
      国立大学法人和歌山大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-002562
    • Filing Date
      2017-01-11
    • Related Report
      2016 Annual Research Report

URL: 

Published: 2016-04-21   Modified: 2022-03-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi