Development of simulator of crystal growth based on multi-physics

• Project/Area Number: 16H03859
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Kyushu University
• Principal Investigator: KAKIMOTO KOICHI 九州大学, 応用力学研究所, 教授 (90291509)
• Co-Investigator(Kenkyū-buntansha): 西澤 伸一 九州大学, 応用力学研究所, 教授 (40267414) ; 中野 智 九州大学, 応用力学研究所, 技術班長 (80423557)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000); Fiscal Year 2018: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2017: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2016: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
• Keywords: 結晶成長 / シミュレーション / マルチフィジックス / マルチフジックス / 欠陥制御 / 結晶工学

Outline of Final Research Achievements

A total pressure-controlled physical vapor transport growth method that stabilizes SiC polytype is proposed. The supersaturation of carbon during SiC growth changed as a function of the growth time due to changes in the temperature difference between the surfaces of the source and the grown crystal. Therefore, modification of the pressure as a function of growth time allowed for constant supersaturation during growth. The supersaturation
was calculated based on classical thermodynamic nucleation theory using data for heat and species of Si2C and SiC2 transfer in a furnace obtained from a global model.The 4H-SiC prepared using this pressure-controlled method was more stable than that of 4H-SiC formed using the conventional constant-pressure method.

Academic Significance and Societal Importance of the Research Achievements

本提案の表面エネルギー解析手法と不純物濃度制御型高周波加熱装置を用いて、化学量論的組成の制御可能なSiC結晶育成方法を確立した結果、結晶前面にわたって４H　SiCの単結晶を育成する条件の構築に成功した。これにより、社会的に要請がある均一特性の４H SiC単結晶育成が可能となってきている。さらに、転位密度の低減方法に関しては、本提案で開発した昇華法原料濃度分布解析手法を用いてSiC結晶を育成した後の転位密度と応力分布を予測した。その結果、社会的要請が大きい転位密度の低減に有効な育成方法を提案した。

Research Products

• [Journal Article] Relationship between carbon concentration and carrier lifetime in CZ-Si crystals (2018)
  • Author(s): Miyamura Y.、Harada H.、Nakano S.、Nishizawa S.、Kakimoto K.
  • Journal Title: Journal of Crystal Growth Volume: 486 Pages: 56-59
  • DOI: 10.1016/j.jcrysgro.2018.01.020
  • Peer Reviewed
• [Journal Article] Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth (2018)
  • Author(s): Liu Xin、Harada Hirofumi、Miyamura Yoshiji、Han Xue-feng、Nakano Satoshi、Nishizawa Shin-ichi、Kakimoto Koichi
  • Journal Title: Journal of Crystal Growth Volume: 499 Pages: 8-12
  • DOI: 10.1016/j.jcrysgro.2018.07.020
  • Peer Reviewed
• [Journal Article] Effect of oxygen on dislocation multiplication in silicon crystals (2018)
  • Author(s): Wataru Fukushima, Hirofumi Harada, Yoshiji Miyamura Masato Imai, Satoshi Nakano, Koichi Kakimoto
  • Journal Title: Journal of Crystal Growth Volume: 486 Pages: 45-49
  • DOI: 10.1016/j.jcrysgro.2017.12.030
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Silicon bulk growth for solar cells: Science and technology (2017)
  • Author(s): Koichi Kakimoto, Bing Gao, Satoshi Nakano, Hirofumi Harada, and Yoshiji Miyamura
  • Journal Title: Japanese Journal of Applied Physics Volume: 56 (2) Issue: 2 Pages: 020101-020101
  • DOI: 10.7567/jjap.56.020101
  • NAID: 210000147405
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] On the phase transformation of single-crystal 4H?SiC during nanoindentation (2017)
  • Author(s): Mitsuhiro Matsumoto, Hu Huang, Hirofumi Harada, Koichi Kakimoto and Jiwang Yan
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 50 Issue: 26 Pages: 265303-265303
  • DOI: 10.1088/1361-6463/aa7489
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Studyontheusageofacommercialsoftware(Comsol-Multiphysicss) for dislocationmultiplicationmodel (2017)
  • Author(s): B. Gallien, M.Albaric, T.Duffar, K.Kakimoto, M.M’Hamdi
  • Journal Title: Journal of Crystal Growth Volume: 457 Pages: 60-64
  • DOI: 10.1016/j.jcrysgro.2016.05.027
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics (2016)
  • Author(s): Takahiro Kawamura, Mitsutoshi Mizutani, Yasuyuki Suzuki, Yoshihiro Kangawa, and Koichi Kakimoto
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 3 Pages: 031301-031301
  • DOI: 10.7567/jjap.55.031301
  • NAID: 210000146126
  • Peer Reviewed
• [Presentation] Collaboration of Numerical and Experimental studies on Crystal Growth Processes (2019)
  • Author(s): Koichi Kakimoto
  • Organizer: International Symposium on Modeling of Crystal Growth Processes and Devices（MCGPD-2019）
  • Int'l Joint Research / Invited
• [Presentation] 結晶成長における実験とシミュレーションのシナジー効果：欠陥をどこまで予測可能か (2019)
  • Author(s): 柿本 浩一
  • Organizer: 第66回応用物理学会 春季学術講演会
  • Invited
• [Presentation] Effect of oxygen on dislocation density in si single crystal for solar cells during solidification and cooling process (2018)
  • Author(s): Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, and Koichi Kakimoto
  • Organizer: 10th International Workshop on Crystalline Silicon for Solar Cells
  • Int'l Joint Research / Invited
• [Presentation] Numerical investigation and experimental validation of crystal growth of semiconductors (2018)
  • Author(s): Koich Kakimoto
  • Organizer: International Symposium & School on Crystal Growth Fundamentals
  • Int'l Joint Research / Invited
• [Presentation] Mass-flux Analysis of AlN Crystal Growth at a Seed Face in PVT Method (2017)
  • Author(s): Yudai Maji, Satoshi Nakano, Koichi Kakimoto
  • Organizer: 7th International Workshop on Crystal Growth TechnologyPotsdam
  • Int'l Joint Research
• [Presentation] Effect of Oxygen on Dislocation Multiplication during Growth of Crystalline Silicon for Solar Cell (2017)
  • Author(s): Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura and Koichi Kakimoto
  • Organizer: 7th International Workshop on Crystal Growth TechnologyPotsdam
  • Int'l Joint Research
• [Presentation] Numerical analysis of dislocation density in Si single crystal with oxygen diffusion (2017)
  • Author(s): Wataru Fukushima, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura Koichi Kakimoto
  • Organizer: 7th International Workshop on Crystal Growth TechnologyPotsdam
  • Int'l Joint Research
• [Presentation] INFLUENCE OF CARRIER CONCENTRATION ON BULK LIFETIME IN CZ-SI CRYSTAL (2017)
  • Author(s): K. Kakimoto
  • Organizer: 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21)
  • Int'l Joint Research
• [Presentation] ANALYSIS OF RE-MELTING PROCESS OF SILICON GROWN BY TRANSVERSE MAGNETIC FIELD APPLIED CZ METHOD (2017)
  • Author(s): K. Kakimoto
  • Organizer: 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21)
  • Int'l Joint Research
• [Presentation] Multi-scale Modelling of Crystal Growth: from Silicon to Wide bandgap materials (2017)
  • Author(s): Koichi Kakimoto
  • Organizer: THE 9th INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS, ROCAM 2017 & THE 2nd INTERNATIONAL SYMPOSIUM ON DIELECTRIC MATERIALS AND APPLICATIONS, ISyDMA 2017
  • Int'l Joint Research
• [Presentation] Crystal Growth of Power Devices (2017)
  • Author(s): Koichi Kakimoto
  • Organizer: CGCT-7
  • Int'l Joint Research / Invited
• [Presentation] AlN結晶成長の昇華法における物質流束解析 (2017)
  • Author(s): 間地雄大，中野智，柿本浩一
  • Organizer: 第46回結晶成国内会議（JCCG-46）
• [Presentation] Crystal growth for power devices and PVs (2017)
  • Author(s): Koichi Kakimoto
  • Organizer: ISCGSCT2017
  • Int'l Joint Research / Invited
• [Presentation] AlN結晶成長の昇華法におけるシード面近傍の物質流束解析 (2017)
  • Author(s): 間地 雄大、中野 智、柿本 浩一
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川県横浜市）
• [Presentation] Crystal growth of AlN: from atomic scale to macro scale (2016)
  • Author(s): Koichi Kakimoto, Satoshi Nakano, Yoshihiro Kangawa
  • Organizer: E-MRS 2016 Fall Meeting
  • Place of Presentation: Central Campus of Warsaw University of Technology（Warsaw、Poland）
  • Year and Date: 2016-09-19
  • Int'l Joint Research / Invited
• [Presentation] Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling proces (2016)
  • Author(s): S. Nakano, B. Gao, K. Kakimoto
  • Organizer: The 18th International Conference on Crystal Growth and Epitaxy
  • Place of Presentation: Nagoya Congress Center
  • Year and Date: 2016-08-07
  • Int'l Joint Research
• [Remarks] 応用力学研究所結晶成長学ホームページ
  • URL: http://www.riam.kyushu-u.ac.jp/nano/index.html