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Development of large-scale first-principles spin-transport simulator and design of interface for high performance devices

Research Project

Project/Area Number 16H03865
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionKobe University (2019, 2021)
University of Tsukuba (2016-2018)

Principal Investigator

Ono Tomoya  神戸大学, 工学研究科, 教授 (80335372)

Co-Investigator(Kenkyū-buntansha) 植本 光治  神戸大学, 工学研究科, 助教 (90748500)
Project Period (FY) 2016-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
Fiscal Year 2019: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2018: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2017: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2016: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Keywords第一原理計算 / 伝導特性 / スピントロニクス / 界面物性 / 表面界面物性 / 輸送特性 / スピン / デバイス界面
Outline of Final Research Achievements

The large-scale first-principles spin-transport calculation method based on the real-space finite-difference method and the code RSPACE have been developed. We performed spin-transport simulations using RSPACE. In the development of the code, by combining the Green's functions of scattering region, which are calculated in divided subspaces, the transport simulation for the carbon nanotube consisting more than 190,000 atoms has been achieved. This simulation employs one of the largest models among the first-principles transport-property calculation. In addition, using RSPACE, we have investigated the spin-polarized transport property in graphene based magnetic tunnel junctions and found that the graphene plays an important role for spin-transport property.

Academic Significance and Societal Importance of the Research Achievements

これからの情報化社会では高性能情報処理デバイスが必要であり、次世代デバイスの開発は喫緊の課題である。デバイスはナノサイズに微細化されており、デバイスの高性能化にはデバイス中を流れる電子の挙動を理解し制御する必要がある。量子力学に基づく計算法は電子の動きを正確に予測できるものの膨大な計算が必要である。本課題は、スーパーコンピュータを用いて膨大な計算を処理する計算手法・コードを開発し、その有用性を示したものである。

Report

(5 results)
  • 2021 Final Research Report ( PDF )
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (34 results)

All 2022 2021 2020 2019 2018 2017 2016 Other

All Int'l Joint Research (2 results) Journal Article (13 results) (of which Int'l Joint Research: 8 results,  Peer Reviewed: 12 results,  Open Access: 4 results,  Acknowledgement Compliant: 2 results) Presentation (19 results) (of which Int'l Joint Research: 10 results,  Invited: 8 results)

  • [Int'l Joint Research] Forschungszentrum Juelich(ドイツ)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] Southern Univ. of Sci. Tech.(中国)

    • Related Report
      2019 Annual Research Report
  • [Journal Article] Theoretical investigation of vacancy related defects at 4H-SiC(000-1)/SiO2 interface after wet oxidation2022

    • Author(s)
      Tsunasaki Mukai、Ono Tomoya、Uemoto Mitsuharu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 61 Issue: SH Pages: SH1001-SH1001

    • DOI

      10.35848/1347-4065/ac5a97

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Quantum Transport of Nanoscale System2022

    • Author(s)
      Shigeru Tsukamoto and Tomoya Ono
    • Journal Title

      Topics in Nanoscience

      Volume: 2 Pages: 81-122

    • DOI

      10.1142/12419

    • ISBN
      9789811242366, 9789811256127
    • Related Report
      2019 Annual Research Report
  • [Journal Article] Calculation of the Green's function in the scattering region for first-principles electron-transport simulations2021

    • Author(s)
      Yoshiyuki Egami, Shigeru Tsukamoto, Tomoya Ono
    • Journal Title

      Physical Review Research

      Volume: 3 Issue: 1 Pages: 0130381-9

    • DOI

      10.1103/physrevresearch.3.013038

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] First-Principles Study on Structure and Anisotropy of High N-atom Density Layer in 4H-SiC2021

    • Author(s)
      Uemoto Mitsuharu、Komatsu Naoki、Egami Yoshiyuki、Ono Tomoya
    • Journal Title

      Journal of the Physical Society of Japan

      Volume: 90 Issue: 12 Pages: 1247131-6

    • DOI

      10.7566/jpsj.90.124713

    • NAID

      120007179196

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Graphene-based Symmetric and Non-Symmetric Magnetoresistive Junctions2020

    • Author(s)
      Hashmi Arqum、Nakanishi Kenta、Ono Tomoya
    • Journal Title

      Journal of the Physical Society of Japan

      Volume: 89 Issue: 3 Pages: 034708-034708

    • DOI

      10.7566/jpsj.89.034708

    • NAID

      120006938938

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Ising ferromagnetism and robust half-metallicity in two-dimensional honeycomb-kagome Cr2O3 layer2020

    • Author(s)
      Hashmi Arqum、Nakanishi Kenta、Farooq Muhammad Umar、Ono Tomoya
    • Journal Title

      npj 2D Materials and Applications

      Volume: 4 Issue: 1 Pages: 39-39

    • DOI

      10.1038/s41699-020-00174-0

    • NAID

      120006919978

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Efficient calculation of self-energy matrices for electron-transport simulations2019

    • Author(s)
      Egami Yoshiyuki、Tsukamoto Shigeru、Ono Tomoya
    • Journal Title

      Physical Review B

      Volume: 100 Issue: 7 Pages: 0754131-15

    • DOI

      10.1103/physrevb.100.075413

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Complex band structure calculations based on the overbridging boundary matching method without using Green's functions2018

    • Author(s)
      S. Tsukamoto, T. Ono, S. Iwase, and S. Bluegel
    • Journal Title

      Physical Review B

      Volume: 98 Issue: 19 Pages: 1954221-19

    • DOI

      10.1103/physrevb.98.195422

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Electrical Matching at Metal/Molecule Contacts for Efficient Heterogeneous Charge Transfer2018

    • Author(s)
      Sato Shino、Iwase Shigeru、Namba Kotaro、Ono Tomoya、Hara Kenji、Fukuoka Atsushi、Uosaki Kohei、Ikeda Katsuyoshi
    • Journal Title

      ACS Nano

      Volume: 12 Issue: 2 Pages: 1228-1235

    • DOI

      10.1021/acsnano.7b07223

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improvement of accuracy in the wave-function-matching method for transport calculations2018

    • Author(s)
      Tsukamoto Shigeru, Ono Tomoya, Bluegel Stefan
    • Journal Title

      Physical Review B

      Volume: 97 Issue: 11 Pages: 1154501-22

    • DOI

      10.1103/physrevb.97.115450

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Theoretical and experimental investigation of the atomic and electronic structures at the 4H-SiC(0001)/SiO2 interface2017

    • Author(s)
      T. Ono, C. J. Kirkham, S. Saito and Y. Oshima
    • Journal Title

      Phys. Rev. B

      Volume: 96 Issue: 11 Pages: 115311-115311

    • DOI

      10.1103/physrevb.96.115311

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Intrinsic origin of electron scattering at the 4H-SiC(0001)/SiO2 interface2017

    • Author(s)
      S. Iwase, C. J. Kirkham, T. Ono
    • Journal Title

      Phys. Rev. B, 95, 041302(R) 1-5 (2017).

      Volume: 95 Issue: 4 Pages: 0413021-5

    • DOI

      10.1103/physrevb.95.041302

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] First-Principles Study on Electron Conduction at 4H-SiC(0001)/SiO2 Interface2016

    • Author(s)
      C. J. Kirkham, T. Ono
    • Journal Title

      Mater. Sci. Forum,

      Volume: 858 Issue: 5 Pages: 457-460

    • DOI

      10.1149/07505.0121ecst

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Presentation] FePd(001)/Graphene の第一原理計算による磁気特性の計算2022

    • Author(s)
      安達隼人, 植本光治, 永沼博, 小野倫也
    • Organizer
      応用物理学会 強的秩序とその操作に関わる研究会 第14回研究会
    • Related Report
      2019 Annual Research Report
  • [Presentation] DFT study on defects at SiC MOS interface: electronic structure and formation mechanism2022

    • Author(s)
      Tomoya Ono
    • Organizer
      The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] DFT Study on Defect Structures at SiC(000-1)/SiO2 Interface after Wet Oxidation2021

    • Author(s)
      Mukai Tsunasaki, Mitsuharu Uemoto, Tomoya Ono
    • Organizer
      2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
    • Related Report
      2019 Annual Research Report
  • [Presentation] FePd(001)/Graphene の第一原理計算による電子状態計算2021

    • Author(s)
      安達隼人, 植本光治, 永沼博, 小野倫也
    • Organizer
      日本物理学会2021年秋季大会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 第一原理計算に基づくグラフェンブリスターの伝導特性評価2021

    • Author(s)
      西浦 匡紀, 植本 光治, 小野 倫也
    • Organizer
      日本物理学会2021年秋季大会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 第一原理計算によるSiC/SiO2ステップ界面の電子状態解析2021

    • Author(s)
      横田 知真, 植本 光治, 小野 倫也
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] DFT study on structure and anisotropy of high N-atom density layer in 4H-SiC2021

    • Author(s)
      Naoki Komatsu, Yoshiyuki Egami, Tomoya Ono, Mitsuharu Uemoto
    • Organizer
      2021 International Conference on Solid State Devices and Materials (SSDM2021)
    • Related Report
      2019 Annual Research Report
  • [Presentation] 第一原理計算によるwet酸化SiC(000-1)/SiO2界面の欠陥構造解析2021

    • Author(s)
      綱崎 夢開, 民部 優輝, 植本 光治, 小野 倫也
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 4H-SiC MOSにおける窒素添加の第一原理計算2020

    • Author(s)
      植本 光治, 小松 直貴, 小野 倫也
    • Organizer
      本物理学会2020年秋季大会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 4H-SiCバルクにおける窒素添加異方性の第一原理計算2020

    • Author(s)
      小松 直貴, 植本 光治, 小野 倫也
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] DFT study on carrier transport in electronic devices2019

    • Author(s)
      Tomoya Ono
    • Organizer
      5th International Conference from Nanoparticles and Nanomaterials to Nanodevices and Nanosystems
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] DFT study on carrier transport property at interface2019

    • Author(s)
      Tomoya Ono
    • Organizer
      32nd International Microprocesses and Nanotechnology Conference
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Evolution of ab-initio calculation based on real-space finite-difference method for massively parallel computers2019

    • Author(s)
      T. Ono
    • Organizer
      International Workshop on Massively Parallel Programming for Quantum Chemistry and Physics 2019
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] DFT calculation for electronic structure and carrier scattering property at SiC-MOS interface2018

    • Author(s)
      Tomoya Ono
    • Organizer
      European Advanced Energy Materials Congress
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Density functional theory calculation for interface electronic structure of SiC power electronic devices2017

    • Author(s)
      Tomoya Ono
    • Organizer
      EMN Meeting on Quantum
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] First-principles study on atomic and electronic structures of 4HSiC(0001)/SiO2 interface2017

    • Author(s)
      T. Ono, C. J. Kirkham
    • Organizer
      APS March Meeting 2017
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Density functional theory study on transport property of nanomaterials2016

    • Author(s)
      Tomoya Ono
    • Organizer
      5th International Conference from Nanoparticles and Nanomaterials to Nanodevices and Nanosystems (IC4N)
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] First-Principles Study on Electron Conduction at 4H-SiC(0001)/SiO2 Interface2016

    • Author(s)
      T. Ono, C. J. Kirkham, S. Iwase
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-State Science 2016
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] First-principles study on carrier scattering property at 4H-SiC(0001)/SiO22016

    • Author(s)
      T. Ono, C. J. Kirkham, S. Iwase
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research

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Published: 2016-04-21   Modified: 2023-01-30  

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