| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2018: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2017: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2016: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
|
|---|
| Outline of Final Research Achievements |
In this research, field-effect transistors using correlated electron materials with an electronic phase transition was produced, which pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. I demonstrated a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO2 nanowire channel, which showed an enhancement in the resistive modulation efficiency. My results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices.
|
