Formation of silicon/germanium photonics platform using bulk silicon wafers

• Project/Area Number: 16H03880
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Optical engineering, Photon science
• Research Institution: Toyohashi University of Technology (2017-2018); The University of Tokyo (2016)
• Principal Investigator: Ishikawa Yasuhiko 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (60303541)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000); Fiscal Year 2018: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000); Fiscal Year 2017: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000); Fiscal Year 2016: ¥12,480,000 (Direct Cost: ¥9,600,000、Indirect Cost: ¥2,880,000)
• Keywords: シリコンフォトニクス / バルクシリコン / 光導波路 / 低損失 / 窒化シリコン / ゲルマニウム

Outline of Final Research Achievements

The purpose of this research is to realize Si photonics utilizing ordinary bulk Si wafers. Two conflicting issues are solved, i.e., (1) suppression of radiation from the optical waveguides on the surface to the bottom Si wafer, and (2) efficient optical coupling to Ge photodetectors formed on the Si wafer. Based on the theoretical simulations, SiNx channel waveguides operating in the 1.31 micrometer range were found to be applicable. In order to experimentally verify the results, the SiNx waveguides were fabricated. The optical transmission measurements are under investigations.

Academic Significance and Societal Importance of the Research Achievements

インターネットをはじめとする情報通信において、光技術は通信の大容量化ならびに低電力化に不可欠となっている。本研究では高性能な光デバイスを低価格化する手法を検討した。半導体集積電子回路の作製技術を利用することで、基本素子の形成が可能であることを理論的に示した。学術的に大きな意義があり、実用化できれば社会に広く貢献できる。

Research Products

• [Journal Article] Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si (2019)
  • Author(s): Yako Motoki、Higashitarumizu Naoki、Ishikawa Yasuhiko
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: SB Pages: SBBE08-SBBE08
  • DOI: 10.7567/1347-4065/aafd96
  • NAID: 210000135389
  • Peer Reviewed
• [Presentation] Thin SiO2 under-cladding layer for SiNx optical waveguides on bulk Si substrate (2018)
  • Author(s): Ryota Oyamada, Motoki Yako, and Yasuhiko Ishikawa
  • Organizer: 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2018)
  • Int'l Joint Research
• [Presentation] Order-of-magnitude enhancement of direct-gap photoluminescence from patterned Ge epitaxial layers on Si induced by a wet chemical treatment (2018)
  • Author(s): Motoki Yako and Yasuhiko Ishikawa
  • Organizer: 2018 International Conference on Solid State Devices and Materials (SSDM2018)
  • Int'l Joint Research
• [Presentation] Ge-based Photonic Devices on Si (2016)
  • Author(s): Yasuhiko Ishikawa
  • Organizer: Progress in Electromagnetics Research Symposium 2016 (PIERS 2016)
  • Place of Presentation: 上海国際会議場
  • Year and Date: 2016-08-09
  • Int'l Joint Research / Invited
• [Remarks] 研究室ホームページ
  • URL: http://www.int.ee.tut.ac.jp/photon/
• [Remarks] 大学ホームページ（教員紹介）
  • URL: https://www.tut.ac.jp/university/faculty/ee/post_35.html
• [Remarks]
  • URL: http://int.ee.tut.ac.jp/photon