| Project/Area Number |
16H03913
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Quantum beam science
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| Research Institution | Japan Synchrotron Radiation Research Institute |
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Principal Investigator |
Kimura Shigeru 公益財団法人高輝度光科学研究センター, 利用研究促進部門, 主席研究員 (50360821)
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| Co-Investigator(Kenkyū-buntansha) |
今井 康彦 公益財団法人高輝度光科学研究センター, 利用研究促進部門, 主幹研究員 (30416375)
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2018: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2017: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2016: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
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| Keywords | 放射光 / Ｘ線回折 / 薄膜 / 異常散乱 / 半導体物性 / X線回折 |
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| Outline of Final Research Achievements |
We developed anomalous x-ray microdiffraction method, which can determine composition and strain for strain released SiGe thin layers on Si by compering diffraction intensity measured with x-ray energies of 11.103 keV (Ge k absorption edge) and 11.000 keV. The most important point of this development is to measure microdiffraction intensity precisely. For this purpose, we adopted a hybrid pixel detector (ASI Timepix STPX-65k) as a detector of high-resolution microdiffraction system we used. Accordingly, we succeeded to develop the microdiffraction system which enable us to compere diffraction intensity deference with precision less than 0.2%.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究は，これまでＸ線回折ピーク位置から求めた格子定数から弾性変形理論とベガード則を利用して決定していたSiGe 層の組成を，放射光がエネルギー可変の光源であることを利用し, Ge原子のK 吸収端およびその近傍で異常散乱による強度変化から上述の仮定なしで求めるものである．本手法は，歪緩和SiGe層の歪と組成を独立に決定することができる唯一の方法である．また，この手法は他の局所領域に形成されるヘテロ薄膜材料（例えばGaInN系レーザ構造等）の組成・歪解析にも応用可能な技術である．
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