| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2018: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2017: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2016: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Outline of Final Research Achievements |
Spin Hall switching is considered as a promising way of the next generation writing scheme of the magnetic random access memories. This study focused on the effect of the applied electric field on the spin Hall switching of Co and Fe ultrathin films, where the electric field was applied thorough HfO2/MgO insulation layer. Moreover, the effect of the electric field on the spin dynamics was also studied. The coercivity and current density of the spin Hall switching were modified by the electric field as 43 %/(V/m) and 20 %/(V/m), respectively. The modifications of the coercivity and the current density of the spin Hall switching by the electric field were found to be sensitive to the deposition condition of the insulation layer.
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