Development of single-crystalline silicon CMOS technology on flexible substrate by atomospheric pressure thermal plasma jet crystallizetion

• Project/Area Number: 16H04334
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Hiroshima University
• Principal Investigator: Higashi Seiichiro 広島大学, 先端物質科学研究科, 教授 (30363047)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000); Fiscal Year 2018: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2016: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
• Keywords: 結晶成長 / 大気圧プラズマ / 優先配向 / 電気電子材料 / シリコン / 電子デバイス・機器

Outline of Final Research Achievements

Thermal plasma jet (TPJ) induced melting and growth of amorphous silicon films has been investigated to control the crystallographic orientation. Here, we developed 1) ultra-high-power TPJ by N2 addition to Ar and 2) high-speed scanning of TPJ by the introduction of rotational stage. We succeeded in crystallization at a scanning speed of 18 m/s, and growth of (111) oriented silicon crystals. By slowly moving the rotational stage parallel to the axis, we have found continuous growth of silicon (111) grains beyond the stiching regions.

Academic Significance and Societal Importance of the Research Achievements

大気圧プラズマ（TPJ）を超ハイパワー化する手法として窒素ガス添加という簡便な方法が劇的な効果をもたらすことを見出した。このハイパワーTPJにより従来達成できなかった超高速の結晶成長を実現することが可能となり、18m/sの走査速度でガラス上のアモルファスシリコンを結晶化することに成功した。またシリコン結晶の面方位を（111）に制御可能であることを見出し、これはフラットパネルディスプレイ等の大面積エレクトロニクスの性能を飛躍的に向上させうる技術として有用な知見を与える成果である。

Research Products

• [Journal Article] Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect (2018)
  • Author(s): H. Hanafusa, R. Nakashima, W. Nakano, and S. Higashi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 57 Issue: 6S2 Pages: 06JH01-06JH01
  • DOI: 10.7567/jjap.57.06jh01
  • NAID: 210000149213
  • Peer Reviewed
• [Journal Article] Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films (2017)
  • Author(s): R. Nakashima, R. Shin, H. Hanafusa, and S. Higashi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 56 Issue: 6S2 Pages: 06HE05-06HE05
  • DOI: 10.7567/jjap.56.06he05
  • NAID: 210000147968
  • Peer Reviewed / Open Access
• [Presentation] Melting and Crystallization of Amorphous Germanium Films on Insulating Substrate By Atmospheric Pressure Micro-Thermal-Plasma-Jet (2018)
  • Author(s): S. Higash, H. Harada, and T. Nakatani
  • Organizer: 2018 ECS and SMEQ Joint Int. Meeting (Cancun, Mexico, Sept. 30 - Oct. 4, 2018), #1064
  • Int'l Joint Research
• [Presentation] Analysis of a Molten Region on Amorphous Silicon Film By High-Speed Camera and Contactless Temperature Measurement during Atmospheric Pressure Thermal Plasma Jet Annealing (2018)
  • Author(s): Y. Mizukawa, H. Hanafusa, and S. Higashi
  • Organizer: 2018 ECS and SMEQ Joint Int. Meeting (Cancun, Mexico, Sept. 30 - Oct. 4, 2018), #1196
  • Int'l Joint Research / Invited
• [Presentation] Ultra-High-Speed Crystallization of Amorphous Silicon Films on Flexible Glass Substrate by Thermal-PlasmaJet Irradiation Using Cylindrical Rotation Stage (2018)
  • Author(s): W. Nakano, H. Hanafusa, S. Higashi
  • Organizer: 2018 International Conference on Solid State Devices and Materials (SSDM2018), (Tokyo, Japan, Sept. 9-13, 2018). N-8-04
  • Int'l Joint Research
• [Presentation] Activation of High-temperature-implanted Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing (2018)
  • Author(s): H. Hanafusa, S. Higashi
  • Organizer: Ext. Abs. 2018 18th Int. Workshop Junction Tech. (IWJT-2018), (Shanghai, China, Mar. 8-9, 2018), pp. 24-27
  • Int'l Joint Research / Invited
• [Presentation] Nitrogen-boosted Atmospheric Pressure Thermal-Plasma-Jet Generation and Its Application to Crystallization of Amorphous Silicon Films on Flexible Glass (2018)
  • Author(s): S. Higashi
  • Organizer: 2018 Int. Thin-Film Transistor Conf. (ITC2018), (Guangzhou, China, Feb.- Mar. 2, 2018), pp. 46
  • Int'l Joint Research / Invited
• [Presentation] 超ハイパワー熱プラズマジェットによる核生成制御 (2017)
  • Author(s): 東 清一郎
  • Organizer: 薄膜材料デバイス研究会 山陰特別研究会
  • Place of Presentation: 島根県
  • Year and Date: 2017-03-21
• [Presentation] 熱プラズマジェットによる超急速熱処理と半導体デバイス応用 (2017)
  • Author(s): 東 清一郎
  • Organizer: 日本物理学会 第72回年次大会
  • Place of Presentation: 大阪大学
  • Year and Date: 2017-03-17
  • Invited
• [Presentation] ハイパワー大気圧熱プラズマジェットの加熱特性評価とシリコン薄膜の結晶成長制御 (2017)
  • Author(s): 中島 涼介、花房 宏明、東 清一郎
  • Organizer: 第64回応用物理学会学術講演会
  • Place of Presentation: パシフィコ横浜
  • Year and Date: 2017-03-14
• [Presentation] Investigation on Crack Suppression Mechanism in Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate (2017)
  • Author(s): T. Hieda, H. Hanafusa, and S. Higashi
  • Organizer: Int. Workshop Nanodevice Technologies 2017
  • Place of Presentation: Higashi-Hiroshima, Japan
  • Year and Date: 2017-03-02
  • Int'l Joint Research
• [Presentation] ハイパワー大気圧熱プラズマジェットの生成とアモルファスシリコン結晶化への応用 (2017)
  • Author(s): 中島 涼介、新 良太、花房 宏明、東 清一郎
  • Organizer: 応用物理学会シリコンテクノロジー分科会 第199回研究集会
  • Place of Presentation: 東京大学
  • Year and Date: 2017-02-17
• [Presentation] 超ハイパワー大気圧プラズマジェットによる急速熱処理と単結晶シリコン成長技術への応用 (2017)
  • Author(s): 東 清一郎
  • Organizer: エコ薄膜研究会
  • Place of Presentation: 琉球大学
  • Year and Date: 2017-01-30
  • Invited
• [Presentation] Micro-thermal-plasma-jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate (2017)
  • Author(s): T. Hieda, R. Shin, H. Hanafusa, S. Higashi
  • Organizer: 34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)
  • Place of Presentation: Sapporo, Hokkaido, Japan
  • Year and Date: 2017-01-16
  • Int'l Joint Research
• [Presentation] Extremely High-power-density Atmospheric Pressure Thermal-Plasma-Jet Generated by Nitrogen-boost Effect (2017)
  • Author(s): H. Hanafusa, W. Nakano, R. Nakashima and S. Higashi
  • Organizer: Int. Symp. Dry Process (DPS2017)
  • Int'l Joint Research
• [Presentation] Investigation on Crack suppression by Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate (2017)
  • Author(s): T. Hieda, H. Hanafusa, S. Higashi
  • Organizer: 231st Electrochem. Soc. (ECS) Meeting
  • Int'l Joint Research
• [Presentation] Generation of Ultra High Power Thermal Plasma Jet (Super TPJ) and Its Application to Crystallization of Amorphous Silicon Films (2016)
  • Author(s): R. Nakashima, R. Shin, H. Hanafusa and S. Higashi
  • Organizer: Int. Symp. Dry Process (DPS2016)
  • Place of Presentation: Sapporo, Hokkaido, Japan
  • Year and Date: 2016-11-21
  • Int'l Joint Research
• [Presentation] ハイパワー大気圧熱プラズマジェット照射によるシリコン薄膜の高速溶融結晶化と結晶成長制御 (2016)
  • Author(s): 中島 涼介、新良太、花房宏明、東清一郎
  • Organizer: 薄膜材料デバイス研究会 第13回研究集会
  • Place of Presentation: 龍谷大学
  • Year and Date: 2016-10-20
• [Presentation] フレキシブルガラス基板上アモルファスシリコン膜の熱プラズマジェット結晶化 (2016)
  • Author(s): 稗田 竜己、新 良太、花房 宏明、東 清一郎
  • Organizer: 第77回応用物理学会学術講演会
  • Place of Presentation: 朱鷺メッセ
  • Year and Date: 2016-09-13
• [Presentation] ハイパワー大気圧熱プラズマジェット照射によるシリコン薄膜の高速溶融結晶化 (2016)
  • Author(s): 中島 涼介、新 良太、花房 宏明、東 清一郎
  • Organizer: 第77回応用物理学会学術講演会
  • Place of Presentation: 朱鷺メッセ
  • Year and Date: 2016-09-13
• [Presentation] 大気圧プラズマによるIV 族半導体薄膜の結晶成長と欠陥制御 (2016)
  • Author(s): 東 清一郎
  • Organizer: 第77回応用物理学会学術講演会
  • Place of Presentation: 朱鷺メッセ
  • Year and Date: 2016-09-13
  • Invited
• [Presentation] Atmospheric pressure micro-thermal-plasma-jet irradiation on amorphous germaniumstrips and its application to thin film transistor fabrication (2016)
  • Author(s): S. Higashi, H. Harada, T. Nakatani
  • Organizer: 2016 Asia-Pacific Workshop Fundamentals and Applications of Advanced Semiconductor Dev. (AWAD2016)
  • Place of Presentation: Hakodate, Japan
  • Year and Date: 2016-07-04
  • Int'l Joint Research
• [Presentation] Activation of Impurity Atoms in 4H-SiC Wafer by Atmospheric Pressure Thermal Plasma Jet Irradiation (2016)
  • Author(s): S. Higashi
  • Organizer: 2016 Int. Workshop Junction Tech. (IWJT-2016)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2016-05-09
  • Int'l Joint Research / Invited