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Universal gate stack for 2D layered channel

Research Project

Project/Area Number 16H04343
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionThe University of Tokyo

Principal Investigator

Nagashio Kosuke  東京大学, 大学院工学系研究科(工学部), 准教授 (20373441)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2018: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2017: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2016: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
Keywords2次元層状材料 / トランジスタ / 絶縁膜堆積 / high-kゲート / h-BN / 2次元材料 / ゲート絶縁膜 / 2D材料 / 複合化 / 高誘電率 / 層状物質 / high-k絶縁膜 / ALD / 絶縁破壊 / 移動度 / 2次元層状半導体 / ゲートスタック
Outline of Final Research Achievements

In this study, we have introduced differen-tial-pressure-type deposition chamber, in which the feed source and the deposition chambers are separated by small aperture and can be evacuated in-dependently. By controlling the deposition condition such as deposition rate, PO2 and temperature, the insulator properties are evaluated by the I-V measurement. We demonstrate the top gate capacitance of 1.14 uF/cm2 by analyzing the I-V data for dual-gate graphene FET.

Academic Significance and Societal Importance of the Research Achievements

2次元層状材料は,電子デバイス展開が期待されるが,原子層物質であるがゆえ環境に特性が敏感であり,本来の特性を得ることが難しいという問題がある.本研究では,ゲートスタックにおいて最も重要な絶縁膜堆積において酸素分離型蒸着装置を用いた特性劣化の少ない手法を開発した.今後のデバイス作製プロセスにおいて重要な役割を担うことが期待される.

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (55 results)

All 2018 2017 2016 Other

All Int'l Joint Research (1 results) Journal Article (20 results) (of which Int'l Joint Research: 8 results,  Peer Reviewed: 20 results,  Acknowledgement Compliant: 4 results) Presentation (28 results) (of which Int'l Joint Research: 24 results,  Invited: 20 results) Book (4 results) Remarks (2 results)

  • [Int'l Joint Research] 南京大学(中国)

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Type-II HfS<sub>2</sub>/MoS<sub>2</sub> Heterojunction Transistors2018

    • Author(s)
      Netsu Seiko、Kanazawa Toru、Uwanno Teerayut、Amemiya Tomohiro、Nagashio Kosuke、Miyamoto Yasuyuki
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E101.C Issue: 5 Pages: 338-342

    • DOI

      10.1587/transele.E101.C.338

    • NAID

      130006729710

    • ISSN
      0916-8524, 1745-1353
    • Year and Date
      2018-05-01
    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation2018

    • Author(s)
      Higashitarumizu Naoki、Kawamoto Hayami、Nakamura Masaru、Shimamura Kiyoshi、Ohashi Naoki、Ueno Keiji、Nagashio Kosuke
    • Journal Title

      Nanoscale

      Volume: 10 Issue: 47 Pages: 22474-22483

    • DOI

      10.1039/c8nr06390g

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET2018

    • Author(s)
      Taniguchi Koki、Fang Nan、Nagashio Kosuke
    • Journal Title

      Applied Physics Letters

      Volume: 113 Issue: 13 Pages: 133505-133505

    • DOI

      10.1063/1.5048099

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule2018

    • Author(s)
      Fang Nan、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Issue: 38 Pages: 32355-32364

    • DOI

      10.1021/acsami.8b10687

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors2018

    • Author(s)
      Uwanno Teerayut、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Issue: 34 Pages: 28780-28788

    • DOI

      10.1021/acsami.8b08959

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+-WSe2 Source2018

    • Author(s)
      He Junyang、Fang Nan、Nakamura Keigo、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Advanced Electronic Materials

      Volume: 4 Issue: 7 Pages: 1800207-1800207

    • DOI

      10.1002/aelm.201800207

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application2018

    • Author(s)
      Higashitarumizu Naoki、Kawamoto Hayami、Ueno Keiji、Nagashio Kosuke
    • Journal Title

      MRS Advances

      Volume: 3 Issue: 45-46 Pages: 2809-2814

    • DOI

      10.1557/adv.2018.404

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface2018

    • Author(s)
      Hattori Yoshiaki、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Issue: 14 Pages: 11732-11738

    • DOI

      10.1021/acsami.7b18454

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor2018

    • Author(s)
      Fang Nan、Nagashio Kosuke
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 51 Issue: 6 Pages: 065110-065119

    • DOI

      10.1088/1361-6463/aaa58c

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Impact ionization and transport properties of hexagonal boron nitride in a constant-voltage measurement2018

    • Author(s)
      Hattori Yoshiaki、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Physical Review B

      Volume: 97 Issue: 4

    • DOI

      10.1103/physrevb.97.045425

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hydrogen-assisted epitaxial growth of monolayer tungsten disulfide and seamless grain stitching2018

    • Author(s)
      Ji Hyun Goo、Lin Yung-Chang、Nagashio Kosuke、Maruyama Mina、Sol?s-Fern?ndez Pablo、Sukma Aji Adha、Panchal Vishal、Okada Susumu、Suenaga Kazu、Ago Hiroki
    • Journal Title

      Chemistry of Materials

      Volume: 30 Issue: 2 Pages: 403-411

    • DOI

      10.1021/acs.chemmater.7b04149

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition2017

    • Author(s)
      S. Kurabayashi, and K. Nagashio
    • Journal Title

      Nanoscale

      Volume: 9 Issue: 35 Pages: 13264-13264

    • DOI

      10.1039/c7nr05385a

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] (Invited) Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h -BN Insulator2017

    • Author(s)
      Nagashio Kosuke、Hattori Yoshiaki、Takahashi Nobuaki、Taniguchi Takashi、Watanabe Kenji、Bao Jianfeng、Norimatsu Wataru、Kusunoki Michiko
    • Journal Title

      ECS Transactions

      Volume: 79 Issue: 1 Pages: 91-97

    • DOI

      10.1149/07901.0091ecst

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Molecularly-thin Anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets2017

    • Author(s)
      S. Sekizaki, M. Osada, K. Nagashio
    • Journal Title

      Nanoscale, 9, 6471

      Volume: 9 Issue: 19 Pages: 6471-6471

    • DOI

      10.1039/c7nr01305a

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Crystalline Graphdiyne Nanosheets Produced at a Gas/Liquid or Liquid/Liquid Interface2017

    • Author(s)
      Ryota Matsuoka, *Ryota Sakamoto, Ken Hoshiko, Sono Sasaki, Hiroyasu Masunaga, Kosuke Nagashio, *Hiroshi Nishihara
    • Journal Title

      J. Am. Chem. Soc.

      Volume: 139 Issue: 8 Pages: 3145-3152

    • DOI

      10.1021/jacs.6b12776

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] "Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics"2017

    • Author(s)
      N. Fang, K. Nagashio, and A. Toriumi
    • Journal Title

      2D Materials

      Volume: 4 Issue: 1 Pages: 015035-015035

    • DOI

      10.1088/2053-1583/aa50c4

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance2017

    • Author(s)
      Nagashio Kosuke
    • Journal Title

      J. Mater. Res

      Volume: 32 Issue: 1 Pages: 64-72

    • DOI

      10.1557/jmr.2016.366

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Anisotropic breakdown strength of single crystal hexagonal Boron Nitride2016

    • Author(s)
      Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio
    • Journal Title

      ACS appl. mater. interfaces

      Volume: 8 Issue: 41 Pages: 27877-27877

    • DOI

      10.1021/acsami.6b06425

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition2016

    • Author(s)
      N. Takahashi and K. Nagashio
    • Journal Title

      Appl. Phys. Express

      Volume: 9 Issue: 12 Pages: 125101-125101

    • DOI

      10.7567/apex.9.125101

    • NAID

      210000138125

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride2016

    • Author(s)
      Y. Hattori, T. Taniguchi, K. Watanabe and K. Nagashio
    • Journal Title

      Appl. Phys. Lett.

      Volume: 109 Issue: 25 Pages: 253111-253111

    • DOI

      10.1063/1.4972555

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] "Understanding of layered heterointerfaces in 2D semiconductors"2018

    • Author(s)
      [Invited] K. Nagashio
    • Organizer
      10th anniversary international symposium on advanced Plasma science (ISPlamsa2018)、 (March, 5, 2018, Meijyo univ., Nagoya).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] "Fabrication and Surface Engineering of Two-dimensional SnS toward Piezoelectric Nanogenerator Application"2018

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, K. Ueno, K. Nagashio,
    • Organizer
      2018 MRS Spring Meeting, (April, 4, 2018, Phoenix Convention Center, Phoenix, USA).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] "Interface engineerign for 2D electronics",2018

    • Author(s)
      K. Nagashio,
    • Organizer
      Core to core program, (April, 16-17, 2018, Cambridge university, UK).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Electrically inert interface in 2D heterostructure FETs2018

    • Author(s)
      K. Nagashio
    • Organizer
      AWAD2018, (July, 3, 2018, Kitakyusyu, Japan).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Interface engineering for 2D layered semiconductors2018

    • Author(s)
      K. Nagashio
    • Organizer
      UMRS-ICEM2018, (August, 23, 2018, Daejeon, Korea).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] "High-k Er2O3 top gate deposition on 2D channel at room temperature by PO2 controlled thermal evaporation",2018

    • Author(s)
      K. Maruyama, K. Nagashio.
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] "Study on origin for Dit through SS in monolayer MoS2/h-BN/graphite FET"2018

    • Author(s)
      S. Toyoda, T. Taniguchi, K.Watanabe, K. Nagashio.
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] "Strongp-type SnS FETs: From Bulk to Monolayer",2018

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, K. Maruyama, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, K. Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] "Interface Traps“Extrinsically” Deliver MIT in Monolayer MoS2 FET",2018

    • Author(s)
      N. Fang, K. Nagashio
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 12, 2018, Univ. of Tokyo, Tokyo)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] "Pinpoint pick up and bubble free transfer in 2D heterostructure fabrication"2018

    • Author(s)
      K. Nagashio,
    • Organizer
      JSPS/EPSRC C2C meeting, (Oct. 30, 2018, Tohoku univ., Sendai).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] "Electrically inert interface in 2D heterostructure FETs"2018

    • Author(s)
      K. Nagashio,
    • Organizer
      3rd Japan-EU flagship workshop on graphene and related 2D materials, (2018, Nov. 19, Sendai, Japan.)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] "Electrically Inert Interface in 2D Heterostructure FETs"2018

    • Author(s)
      K. Nagashio,
    • Organizer
      Workshop on innovative nanoscale devices and systems (WINDS2018), (Nov. 28, 2018, The Westin Hapuna Beach Resort, Kohala, Hawaii, USA).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] "Interface engineering for 2D layered semiconductors"2018

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, K. Nagashio,
    • Organizer
      UTokyo-NTU joint conference at NUT 2018, (Dec. 12-13, 2018, NTU, Taiwan).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] "Interface engineering for 2D layered semiconductors"2018

    • Author(s)
      K. Nagashio,
    • Organizer
      UTokyo-NTU joint conference at NUT 2018, (Dec. 12-13, 2018, NTU, Taiwan).
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] "Interface engineering for 2D electonics"2017

    • Author(s)
      K. Nagashio
    • Organizer
      2017 NEA Symposium of Emerging Materials Innovation, Lotte hotel, Soul, Korea
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] "Interface engineering for 2D layered semiconductors"2017

    • Author(s)
      K. Nagashio
    • Organizer
      2017 PKU-UTokyo nano-carbon summer camp, Hongo, UTokyo
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] "Gap engineering and reliability study for 2Delectronics"2017

    • Author(s)
      K. Nagashio
    • Organizer
      6th Int. Conf. on Semiconductor Technology for ULSI & TFT, Schloss Hernstein, Hernstein, Austria
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 2次元原子層半導体における層状ヘテロ界面の理解と制御2017

    • Author(s)
      長汐晃輔
    • Organizer
      第36回電子材料シンポジウム,長浜ロイヤルホテル
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] "2次元層状チャネルFETの電子輸送特性及び界面特性"2017

    • Author(s)
      長汐晃輔
    • Organizer
      応用電子物性分科会研究例会, 東工大,目黒区
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] "2次元原子膜応用のためのゲートスタック形成"2017

    • Author(s)
      長汐晃輔
    • Organizer
      2017真空・表面科学合同講演会, 横浜市立大,横浜市
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Interface engineering for 2D electonics2017

    • Author(s)
      K. Nagashio
    • Organizer
      Nippon-Taiwan Workshop
    • Place of Presentation
      Kwansei Gakuin Univ. Sanda, Hyogo
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] グラフェンの伝導特性2017

    • Author(s)
      長汐晃輔
    • Organizer
      日本化学会第97春季年会「特別企画」二次元物質の科学
    • Place of Presentation
      慶応大学, 神奈川
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Graphene transistor application2016

    • Author(s)
      K. Nagashio
    • Organizer
      Core to core program
    • Place of Presentation
      Tohoku university, Sendai
    • Year and Date
      2016-11-16
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Reliability study on layered 2D insulator2016

    • Author(s)
      K. Nagashio
    • Organizer
      230th Electrochemical Society Meeting
    • Place of Presentation
      Honolulu, Hawaii
    • Year and Date
      2016-10-02
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Gap state analysis and reliability study on 2D electronics2016

    • Author(s)
      K. Nagashio
    • Organizer
      Core to core program
    • Place of Presentation
      Cambridge university,UK
    • Year and Date
      2016-07-18
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Gap engineering & reliability study for 2D electronics2016

    • Author(s)
      K. Nagashio
    • Organizer
      Graphene week
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-06-13
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Dielectric breakdown of hexagonal Boron Nitride2016

    • Author(s)
      K. Nagashio
    • Organizer
      International conference on graphene and related materials: properties and applications
    • Place of Presentation
      Paestum, Italy
    • Year and Date
      2016-05-23
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Dielectric breakdown of hexiagonal boronitride2016

    • Author(s)
      K. Nagashio
    • Organizer
      UTokyo-NTU joint conference at NUT 2016
    • Place of Presentation
      NTU, Taiwan
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Book] "グラフェンの伝導特性とエネルギーギャップ形成", 二次元物質の科学, CSJカレントレビュー, 第26号, 日本化学会編2017

    • Author(s)
      長汐晃輔
    • Total Pages
      7
    • Publisher
      化学同人
    • Related Report
      2017 Annual Research Report
  • [Book] "2次元層状チャネルFETの電子輸送特性"2017

    • Author(s)
      長汐晃輔
    • Total Pages
      6
    • Publisher
      応用電子物性分科会誌
    • Related Report
      2017 Annual Research Report
  • [Book] , "電界効果トランジスタにおけるゲートスタック形成と評価", カーボンナノチューブ・グラフェンの応用研究最前線2016

    • Author(s)
      長汐晃輔
    • Publisher
      エヌ・ティー・エス
    • Related Report
      2016 Annual Research Report
  • [Book] 2D materials for nanoelectronics2016

    • Author(s)
      A. Toriumi, K. Nagashio
    • Publisher
      CRC Press
    • Related Report
      2016 Annual Research Report
  • [Remarks] 東大マテリアル・長汐研

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2018 Annual Research Report 2017 Annual Research Report
  • [Remarks] 東京大学 マテリアル工学専攻 長汐研究室

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2016 Annual Research Report

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Published: 2016-04-21   Modified: 2020-03-30  

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