| Budget Amount *help |
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2018: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2017: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2016: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Outline of Final Research Achievements |
In this study, we have introduced differen-tial-pressure-type deposition chamber, in which the feed source and the deposition chambers are separated by small aperture and can be evacuated in-dependently. By controlling the deposition condition such as deposition rate, PO2 and temperature, the insulator properties are evaluated by the I-V measurement. We demonstrate the top gate capacitance of 1.14 uF/cm2 by analyzing the I-V data for dual-gate graphene FET.
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