| Budget Amount *help |
¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
Fiscal Year 2019: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2018: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2017: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
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| Outline of Final Research Achievements |
In this research, we proceeded with research on the development of a blackbody emitters and EL emitters, investigation of emission mechanisms and the optimization of the device structure, highly integrated optoelectronic devices on silicon chips. In the development of the blackbody emitters, we proceeded with optimization of materials and device structure, construction of theory and simulation for the elucidation of emission mechanisms. We also studied the new graphene growth method that can be directly formed on silicon substrate. For the EL emitter, we investigated the EL emitting mechanisms and its improvement method. In addition, for the highly integrated optoelectronic devices, we studied the coupling of nanocarbon device to silicon photonics, and we demostrated the optical coupling between carbon nanotube and optical waveguides and the control of emission properties.
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