Development of advanced reactive plasma-enhanced processes for low-temperature large-area formation of next-generation oxide semiconductor devices

• Project/Area Number: 16H04509
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Composite materials/Surface and interface engineering
• Research Institution: Osaka University
• Principal Investigator: Setsuhara Yuichi 大阪大学, 接合科学研究所, 教授 (80236108)
• Project Period (FY): 2016-04-01 – 2020-03-31
• Project Status: Completed (Fiscal Year 2019)
• Budget Amount: ¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000); Fiscal Year 2019: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2018: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000); Fiscal Year 2017: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000); Fiscal Year 2016: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
• Keywords: プラズマ加工 / 反応性プラズマ / プラズマ制御 / 低温プロセス / 酸化物半導体

Outline of Final Research Achievements

This research project has been carried out to develop reactive plasma-enhanced processes (plasama-enhanced sputter deposition and post-deposition plasma annealing processes) using inductively-coupled plasmas sustained with low-inductance antenna for fabrication of next-generation devices including flexible electronics, which require large-area and low-damage processes at low substrate temperature. The results of the present project have exhibited that high-mobility semiconductor films with excellent stability have been successfully formed at substrate temperatures as low as or lower than the conventional processes.

Academic Significance and Societal Importance of the Research Achievements

本研究では、独自のプラズマ反応性解析手法を通じて、気相での反応性制御がプロセスに及ぼす影響を、製膜後の雰囲気から形成膜に付着する気体元素と明確に峻別して、明瞭に評価することに成功した。さらに、プラズマ気相での反応性制御により、熱処理ではアニール効果を示さない程度の低温においても、従来の特性を凌駕する良好な薄膜トランジスタ特性を示す半導体薄膜を形成可能であると共に、良好な安定性を示す半導体薄膜を形成可能であることを実証しており、高移動度の半導体薄膜を低温で形成するための装置開発に繋がることが期待される。

Research Products

• [Journal Article] Low-temperature formation of high-mobility a-InGaZnOx films using plasma-enhanced reactive processes (2019)
  • Author(s): Takenaka Kosuke、Endo Masashi、Hirayama Hiroyuki、Uchida Giichiro、Ebe Akinori、Setsuhara Yuichi
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: 9 Pages: 090605-090605
  • DOI: 10.7567/1347-4065/ab219c
  • NAID: 210000156015
  • Peer Reviewed / Open Access
• [Journal Article] Effects of post-deposition plasma treatments on stability of amorphous InGaZnOx thin-film transistors prepared with plasma-assisted reactive magnetron sputtering (2019)
  • Author(s): Kosuke Takenaka, Masashi Endo, Giichiro Uchida, Yuichi Setsuhara
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: SA Pages: SAAC03-SAAC03
  • DOI: 10.7567/1347-4065/aaec18
  • NAID: 210000135226
  • Peer Reviewed
• [Journal Article] Influence of sputtered atom flux on the electrical properties of a-IGZO films deposited by plasma-enhanced reactive sputtering (2019)
  • Author(s): Kosuke Takenaka, Masashi Endo, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara
  • Journal Title: Journal of Alloys and Compounds Volume: 772 Pages: 642-649
  • DOI: 10.1016/j.jallcom.2018.09.143
  • Peer Reviewed
• [Journal Article] Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma (2018)
  • Author(s): Takenaka Kosuke、Endo Masashi、Uchida Giichiro、Setsuhara Yuichi
  • Journal Title: Applied Physics Letters Volume: 112 Issue: 15 Pages: 152103-152103
  • DOI: 10.1063/1.5011268
  • Peer Reviewed
• [Journal Article] Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering (2017)
  • Author(s): Takenaka Kosuke、Satake Yoshikatsu、Uchida Giichiro、Setsuhara Yuichi
  • Journal Title: Japanese Journal of Applied Physics Volume: 57 Issue: 1S Pages: 01AD06-01AD06
  • DOI: 10.7567/jjap.57.01ad06
  • Peer Reviewed
• [Journal Article] Effects of working pressure on the physical properties of a-InGaZnOx films formed using inductively-coupled plasma-enhanced reactive sputtering deposition (2016)
  • Author(s): Kosuke Takenaka, Keitaro Nakata, Giichiro Uchida, Yuichi Setsuhara, Akinori Ebe
  • Journal Title: EEE Transactions on Plasma Science Volume: 44 Issue: 12 Pages: 3099-3106
  • DOI: 10.1109/tps.2016.2593458
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Effects of post-processing temperature on performance of IGZO TFTs fabricated with plasma-enhanced reactive processes (2020)
  • Author(s): Kosuke Takenaka, Masashi Endo, Tomoki Yoshitani, Hiroyuki Hirayama, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara
  • Organizer: 12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2020) / (IC-PLANTS 2020), Nagoya, Japan (2020.03.08-2020.03.11)
  • Int'l Joint Research
• [Presentation] 反応性プラズマプロセスを用いた高移動度IGZO薄膜トランジスタの低温形成(II) (2020)
  • Author(s): 節原 裕一、竹中 弘祐、平山 裕之、内田 儀一郎、江部 明憲
  • Organizer: 第67回応用物理学会春季学術講演会, 東京 (2020.03.12-2020.03.15)
• [Presentation] Low-temperature Formation of High-Mobility In GaZnOx Thin-Film Transistors by Plasma-Enhanced Reactive Processes (2019)
  • Author(s): Yuichi Setsuhara, Kosuke Takenaka, Masashi Endo, Giichiro Uchida
  • Organizer: 7th Global Nanotechnology Congress and Expo, Kuala Lumpur, Malaysia (2019.12.02-2019.12.04)
  • Int'l Joint Research / Invited
• [Presentation] Reactive plasma processes for formation of high-mobility IGZO thin-film transistors (2019)
  • Author(s): Yuichi Setsuhara1, Kosuke Takenaka, Masashi Endo, Giichiro Uchida and Akinori Ebe
  • Organizer: 21st International Conference on Advanced Energy Materials and Research, Zurich, Switzerland (2019.07.11-2019.07.12)
  • Int'l Joint Research / Invited
• [Presentation] Low-temperature formation of high-mobility InGaZnOx thin film transistor by ICP-enhanced reactive plasma processes (2019)
  • Author(s): Yuichi Setsuhara, Kosuke Takenaka, Masashi Endo, Tomoki Yoshitani, Giichiro Uchida, Akinori Ebe
  • Organizer: The 15th International Symposium on Sputtering and Plasma Processes (ISSP2019), Kanazawa, Japan (2019.06.11-2019.06.14)
  • Int'l Joint Research / Invited
• [Presentation] Functional thin film deposition using plasma-assisted reactive process (2019)
  • Author(s): Kosuke Takenaka, Hiroyuki Hirayama, Yuichi Setsuhara, Keisuke Ide, Toshio Kamiya
  • Organizer: International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development Satellite (iLIM-s), Nagoya, Japan (2019.11.01-2019.11.03)
  • Int'l Joint Research / Invited
• [Presentation] 反応性プラズマプロセスを用いた高移動度IGZO薄膜トランジスタの低温形成 (2019)
  • Author(s): 節原 裕一、竹中 弘祐、平山 裕之、遠藤 雅、内田 儀一郎、江部 明憲
  • Organizer: 第80回応用物理学会秋季学術講演会,北海道大学,(2019.09.18-2019.09.21)
• [Presentation] Plasma-assisted Reactive Process for Fabrication of High Mobility IGZO Thin Film Transistor at Low-Temperature (2019)
  • Author(s): Kosuke Takenaka, Hiroyuki Hirayama, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara
  • Organizer: Materials Research Meeting 2019,Yokohama, Japan,(2019.12.10-2019.12.14)
  • Int'l Joint Research
• [Presentation] Formation of amorphous oxide thin films using plasma-assisted reactive sputter deposition (2019)
  • Author(s): Hiroyuki Hirayama, Kosuke Takenaka, Yuichi Setsuhara
  • Organizer: International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development Satellite (iLIM-s),Nagoya, Japan,(2019.11.01-2019.11.03)
  • Int'l Joint Research
• [Presentation] Plasma-Enhanced Reactivity-Control Processes for Low-Temperature Formation of High-Mobility IGZO Thin-Film Transistors (2019)
  • Author(s): Yuichi Setsuhara, Kosuke Takenaka, Hiroyuki Hirayama, Giichiro Uchida, Akinori Ebe
  • Organizer: 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019), Jeju, Korea (2019.09.01-2019.09.05)
  • Int'l Joint Research
• [Presentation] Development of low-temperature plasma process for formation of functional thin films (2019)
  • Author(s): Yuichi Setsuhara, Kosuke Takenaka, Hiroyuki Hirayama, Keisuke Ide, Toshio Kamiya
  • Organizer: 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4), Sendai, Japan (2019.10.03-2019.10.04)
  • Int'l Joint Research
• [Presentation] Plasma-assisted reactive processes for low-temperature fabrication of high-mobility InGaZnOx TFTs (2019)
  • Author(s): Yuichi Setsuhara, Masashi Endo, Horoyuki Hirayama, Tomoki Yoshitani, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: XXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) and 10th International Conference on Reactive Plasmas (ICRP-10), Sapporo, Hokkaido, Japan (2019.07.14-2019.07.19)
  • Int'l Joint Research
• [Presentation] ICP-Enhanced Reactive Plasma Processes for Low-Temperature Formation of High-Mobility Oxide Semiconductor TFT (2019)
  • Author(s): Yuichi Setsuhara, Masashi Endo, Tomoki Yoshitani, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: The 5th Asian Workshop on Applied Plasma Science and Engineering 2019 (APSE2019),University of Malaya, Kuala Lumpur, Malaysia,(2019.01.28-2019.01.29)
  • Int'l Joint Research / Invited
• [Presentation] Low-Temperature Formation of High-Mobility IGZO Thin Film Transistor by Advanced Reactive Sputter Deposition Enhanced with ICP (2018)
  • Author(s): Yuichi Setsuhara, Masashi Endo, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC’2018),Paris, France,(2018.07.09-2018.07.13)
  • Int'l Joint Research / Invited
• [Presentation] ICP-Assisted Reactive Sputter Deposition and Plasma-Enhanced Annealing Processes for Low-Temperature Formation of High-Mobility In-Ga-Zn-O Thin-Film Transistors (2018)
  • Author(s): Yuichi Setsuhara, Kosuke Takenaka, Masashi Endo, Giichiro Uchida, Akinori Ebe
  • Organizer: 16th International Conference on Plasma Surface Engineering,Congress Center, Garmisch-Partenkirchen, Germany,(2018.09.17-2018.09.21)
  • Int'l Joint Research
• [Presentation] Gate-bias instability of post-deposition plasma treated amorphous InGaZnOx thin-film transistors prepared with plasma-assisted reactive magnetron sputtering (2018)
  • Author(s): Kosuke Takenaka, Yuichi Setsuhara, Masashi Endo, Giichiro Uchida
  • Organizer: 40th International Symposium on Dry Process (DPS2018),Nagoya University, Nagoya,(2018.11.13-2018.11.15)
  • Int'l Joint Research
• [Presentation] Formation of Functional Thin Films at Low Temperature using Plasma-assisted Reactive Processes (2018)
  • Author(s): 竹中 弘祐, 節原 Kosuke Takenaka, Masashi Endo, Tomoki Yoshitani, Hiroyuki Hirayama, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara裕一, 内田 儀一郎, 井手 啓介, 神谷 利夫
  • Organizer: 第28回日本MRS年次大会,西日本総合展示場 他,(2018.12.18-2018.12.20)
  • Invited
• [Presentation] プラズマアシスト反応性プロセスを用いた低温での高移動度薄膜トランジスタの作製 (2018)
  • Author(s): 竹中 弘祐, 節原 裕一, 内田 儀一郎, 井手 啓介, 神谷 利夫
  • Organizer: 第2回酸化物半導体討論会/学際・国際的高度人材育成ライフイノベーションマテリアル創製共同研究プロジェクト分科会/第76回フロンティア材料研究所講演会,神奈川,(2018.10.26)
  • Invited
• [Presentation] 反応性プラズマプロセスを用いた機能性薄膜合成 (2018)
  • Author(s): 竹中 弘祐, 内田 儀一郎, 節原 裕一
  • Organizer: 日本溶接協会平成30年度第2回(通算88回) 表面改質技術研究委員会,神奈川,(2018.10.10)
  • Invited
• [Presentation] 低ダメージ大面積プロセス対応プラズマ生成・制御技術の開発 (2018)
  • Author(s): 節原 裕一
  • Organizer: 2018年度フロンティア材料研究所学術賞受賞記念講演会・若手教員講演会,東京,(2018.09.04)
  • Invited
• [Presentation] Plasma-Enhanced Reactive Processes for Low-Temperature Formation of High-Mobility IGZO Thin Film Transistor and Functional Films for Solar Cells (2018)
  • Author(s): Yuichi Setsuhara, Masashi Endo, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: 5th Japan-Korea Joint Symposium on Advanced Solar Cells 2018 and 2nd International Symposium on Energy Research and Application,Sungkyunkwan University, Swuon, South Korea,(2018.02.05-2018.02.06)
  • Int'l Joint Research / Invited
• [Presentation] プラズマ支援反応性プロセスを用いた高移動度IGZO薄膜の低温形成 (2018)
  • Author(s): 節原 裕一、遠藤 雅、竹中 弘祐、内田 儀一郎、江部 明憲
  • Organizer: 第65回応用物理学会春季学術講演会,東京,(2018.03.18-2018.03.21)
  • Invited
• [Presentation] ICP-Enhanced Reactive Sputter Deposition for Low-Temperature Formation of High-Mobility IGZO Thin Films Transistor (2017)
  • Author(s): Yuichi Setsuhara, Masashi Endo, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: The 22nd Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics and The 9th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials
  • Place of Presentation: Suwon,Korea,
  • Year and Date: 2017-04-05
  • Int'l Joint Research / Invited
• [Presentation] プラズマ支援反応性スパッタ製膜を用いた高移動度IGZO薄膜トランジスタの形成 (2017)
  • Author(s): 節原 裕一, 遠藤 雅, 竹中 弘祐, 内田 儀一郎, 江部 明憲
  • Organizer: 第６４回応用物理学会春季学術講演会
  • Place of Presentation: 横浜
  • Year and Date: 2017-03-14
• [Presentation] Formation of High-mobility IGZO Thin Film Transistors Using ICP-enhanced Reactive Sputter Deposition (2017)
  • Author(s): Yuichi Setsuhara, Kosuke Takenaka, Masashi Endo, Giichiro Uchida, Akinori Ebe
  • Organizer: 第34回プラズマプロセシング研究会(SPP34), 第29回プラズマ材料科学シンポジウム(SPSM29)
  • Place of Presentation: 札幌
  • Year and Date: 2017-01-16
• [Presentation] Low-Temperature Formation of High-Mobility IGZO Thin Film Transistor by Advanced Reactive Sputter Deposition Enhanced with ICP (2017)
  • Author(s): Yuichi Setsuhara, Masashi Endo, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: Frontiers in Materials Processing Applications, Research and Technology,Bordeaux, France,(2017.07.09-2017.07.12)
  • Int'l Joint Research / Invited
• [Presentation] ICP-Enhanced Reactive Sputter Deposition for Low-Temperature Formation of High-Mobility IGZO Thin Films Transistor (2017)
  • Author(s): Yuichi Setsuhara, Masashi Endo, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: The 22nd Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics and The 9th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials,Suwon,Korea,(2017.04.05-2017.04.07)
  • Int'l Joint Research / Invited
• [Presentation] Advanced Plasma Processing for Formation of Functional Thin Films (2017)
  • Author(s): K. Takenaka, G. Uchida, K. Ide, T. Kamiya, Y. Setsuhara
  • Organizer: 2nd Int. Symp. on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2),Nagoya, Japan ,(2017.09.29-2017.10.02)
  • Int'l Joint Research / Invited
• [Presentation] Advanced ICP-Enhanced Plasma Systems for Meters-Scale Large-Area Processes (2017)
  • Author(s): Akinori Ebe, Kazuaki Nishisaka, Kazuto Okazaki, Atsushi Osawa, Kosuke Takenaka, Yuichi Setsuhara
  • Organizer: The 11th Asian-European International Conference on Plasma Surface Engineering,Jeju, Korea,(2017.09.11-2017.09.15)
  • Int'l Joint Research / Invited
• [Presentation] Functional Thin Film Deposition by Advanced Plasma Assisted CVD & PVD Process (2017)
  • Author(s): Kosuke Takenaka, Masashi Endo, Giichiro Uchida, Y. Setsuhara
  • Organizer: International union of materials research societies-The 15th International conference of advanced materials,Kyoto, Japan,(2017.08.27-2017.09.01)
  • Int'l Joint Research / Invited
• [Presentation] Low-Temperature Formation of High-Mobility IGZO Thin Film Transistors Using ICP-Enhanced Reactive Plasma Processes (2017)
  • Author(s): Yuichi Setsuhara, Masashi Endo, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: 39th International Symposium on Dry Process (DPS2017),Tokyo, Japan,(2017.11.16-2017.11.17)
  • Int'l Joint Research
• [Presentation] Low-Temperature Formation of High-Mobility IGZO Thin Film Transistors for Flexible Electrinics with ICP-Enhanced Reactive Plasma Processes (2017)
  • Author(s): Kosuke Takenaka, Yuichi Setsuhara, Masashi Endo, Giichiro Uchida, Akinori Ebe
  • Organizer: The 11th Asian-European International Conference on Plasma Surface Engineering (AEPSE 2017),Jeju, Korea,(2017.09.11-2017.09.15)
  • Int'l Joint Research
• [Presentation] プラズマ支援反応性スパッタ製膜を用いた高移動度IGZO薄膜トランジスタの形成（II） (2017)
  • Author(s): 節原 裕一、遠藤 雅、竹中 弘祐、内田 儀一郎、江部 明憲
  • Organizer: 第78回応用物理学会秋季学術講演会 ,福岡,(2017.09.05-2017.09.08)
• [Presentation] Combinatorial characterization of a-IGZO film properties deposited with ICP-enhanced reactive sputtering (2016)
  • Author(s): Yuichi Setsuhara, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe
  • Organizer: 38th International Symposium on Dry Process (DPS2016)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2016-11-21
  • Int'l Joint Research
• [Presentation] 高密度プラズマの基礎から応用まで (2016)
  • Author(s): 節原 裕一
  • Organizer: 日本学術振興会 透明酸化物光・電子材料第166委員会 第72回研究会
  • Place of Presentation: 東京
  • Invited