| Budget Amount *help |
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2017: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥12,480,000 (Direct Cost: ¥9,600,000、Indirect Cost: ¥2,880,000)
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| Outline of Final Research Achievements |
In this study, in order to clarify “Effects of pulse current on Peiels potential of covalent semiconductor crystal”, deformation behaviors of silicon single crystal in which cleavage fracture easily occurs at room temperature has been investigated under the pulse current. It is clarified that the Si single crystal more easily deform under such pulse current than under the uniform high temperature field where the temperature is 20 degree C just below the melting point of Si. The mechanism of deformation was same with that of high temperature plastic deformation based on the movement of dislocations. On the other hand, the primary factor which makes it possible to deform much easier than high temperature field has not been clarified in this study.
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