| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2018: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2017: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2016: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Outline of Final Research Achievements |
In order to prepare silicene (a thin film of one atomic layer of silicon) with excellent electrical properties by oxidation of a silicon wafer, the mechanism of the oxidation self-termination which the progress of thermal oxidation stopped was investigated. As a result, it was found that the lattice strain included by oxidation was the cause. If there are no defects formed to relieve the strain, the oxidation reaction is limited, and it becomes possible to stop the reaction by leaving one atomic layer. However, it has also been found that oxidation does not self-limited in the presence of even a small amount of light.
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