| Budget Amount *help |
¥25,090,000 (Direct Cost: ¥19,300,000、Indirect Cost: ¥5,790,000)
Fiscal Year 2018: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
Fiscal Year 2017: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2016: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
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| Outline of Final Research Achievements |
We establish a new nanowire material that combines GaAs-based compound semiconductors having high electronic and optical properties with oxides of the various and stable properties.
We succeeded in extending the GaAs nanowire function by adding nitrogen and bismuth. In addition, we succeeded in forming GaAs/AlGaOx heterostructure nanowires by simple natural oxidation. ALso, we have fabricated high-precision GaAs/TiO heterostructure nanowires by combining crystal growth and sputtering. We demonstrated that the GaAs nanowire array fabricated on the cm-sized Si substrate acts as a photoanode.
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