Establishment of semiconductor-oxide composite nanowires and its application to photocatalyst
| Project/Area Number |
16H05970
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Nanomaterials engineering
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| Research Institution | Ehime University |
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Principal Investigator |
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| Project Period (FY) |
2016-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥25,090,000 (Direct Cost: ¥19,300,000、Indirect Cost: ¥5,790,000)
Fiscal Year 2018: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
Fiscal Year 2017: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2016: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
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| Keywords | ナノワイヤ / 分子線エピタキシー / 化合物半導体 / 酸化物 / 半導体 / 白色発光 / ナノ材料 |
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| Outline of Final Research Achievements |
We establish a new nanowire material that combines GaAs-based compound semiconductors having high electronic and optical properties with oxides of the various and stable properties.
We succeeded in extending the GaAs nanowire function by adding nitrogen and bismuth. In addition, we succeeded in forming GaAs/AlGaOx heterostructure nanowires by simple natural oxidation. ALso, we have fabricated high-precision GaAs/TiO heterostructure nanowires by combining crystal growth and sputtering. We demonstrated that the GaAs nanowire array fabricated on the cm-sized Si substrate acts as a photoanode.
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| Academic Significance and Societal Importance of the Research Achievements |
Si基板上に形成されたGaAs系ナノワイヤの高機能化は、現在のLSI技術を飛躍的に向上させる可能性がある。本研究では、２インチのSi基板全域に高い光・電子機能を有するGaAsナノワイヤを形成することで、その融合可能性を示した。さらに、多様な元素・材料の添加、積層によりその機能が拡張できることを示した。窒素およびビスマスの添加では近赤外域の応用域・機能を拡大することで通信・センシングの動作性能の向上が見込まれる。AlGaOx自然酸化層はこれらの性能と安定性を向上させられる可能性がある。光アノード機能の実証とTiO酸化物の融合は、エネルギー創出のための光触媒応用に有望である。
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Report
(4 results)
Research Products
(45 results)
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[Presentation] Additional GaAs related nanowires2016
Author(s)
Fumitaro Ishikawa
Organizer
JSPS workshop on Japan-Sweden frontiers in spin and photon functionalities of semiconductor nanostructures,
Place of Presentation
Jozankei Grand Hotel, Sapporo, Japan.
Year and Date
2016-08-30
Related Report
Int'l Joint Research / Invited
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