| Budget Amount *help |
¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2018: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2017: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥15,470,000 (Direct Cost: ¥11,900,000、Indirect Cost: ¥3,570,000)
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| Outline of Final Research Achievements |
In this study, we investigated the antiferromagnetic spin reversal characteristics of the antiferromagnetic magnetoelectric material Cr2O3 thin film, to clarify whether it is possible to manipulate antiferromagnetic spin at a voltage of 1 V or less. We elucidated the cause of the increase of energy (EH products) necessary for antiferromagnetic spin inversion, which has been a problem in Cr2O3 thin films. We also proposed and demonstrated a method to reduce the inversion energy (EH products) based on the obtained results. Furthermore, we developed a technology to add a parasitic magnetization to Cr2O3 thin film, which is necessary to realize the reduction method with a thin Cr2O3 thin film. Through the study, we have shown a path to achieve low voltage inversion of the antiferromagnetic spin in Cr2O3 thin film.
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