Electrochemical etching approarch to ultrathin films
| Project/Area Number |
16H05981
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥26,650,000 (Direct Cost: ¥20,500,000、Indirect Cost: ¥6,150,000)
Fiscal Year 2017: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥22,620,000 (Direct Cost: ¥17,400,000、Indirect Cost: ¥5,220,000)
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| Keywords | 層状物質 / カルコゲナイド物質 / 超伝導 / 電気化学反応 / 電気二重層トランジスタ / セレン化鉄 / 電気化学エッチング / 高温超伝導 / 薄膜新材料 |
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| Outline of Final Research Achievements |
Electrochemical etching technique has been applied to layered materials in electric-double layer transistor. Exotic physical properties, absent in bulk form, are expected to emerge in ultrathin limit. A one of the typical examples is layered superconducting iron selenide (FeSe), with superconducting transition temperature (Tc) of 8 K in bulk. The monolayer-thick FeSe exhibits high-Tc at 65 K as discovered by spectroscopic measurements. In this work, we applied electrochemical etching to FeSe films to reveal superconducting critical parameters in high-Tc state in ultrathin limit. We found that the isotropic upper critical field (Hc2) in bulk FeSe is converted to highly anisotropy one in high-Tc state. Based on Ginzburg-Landau model, anisotropic Hc2 exhibits three-dimensional nature rather than two dimensional one, which indicates strong confinement of Cooper pair within FeSe sheet. We consider that this confinement effect stabilizes the high-Tc state of FeSe in monolayer-thick limit.
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Report
(3 results)
Research Products
(16 results)
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[Journal Article] Enhancement of superconducting transition temperature in FeSe electric-double-layer transistor with multivalent ionic liquids2018
Author(s)
Tomoki Miyakawa, Junichi Shiogai, Sunao Shimizu, Michio Matsumoto, Yukihiro Ito, Takayuki Harada, Kohei Fujiwara, Tsutomu Nojima, Yoshimitsu Itoh, Takuzo Aida, Yoshihiro Iwasa, Atsushi Tsukazaki
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Journal Title
Phys. Rev. Materials
Volume: 2
Issue: 3
Pages: 031801-031801
DOI
Related Report
Peer Reviewed
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