| Budget Amount *help |
¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
Fiscal Year 2018: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
Fiscal Year 2016: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
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| Outline of Final Research Achievements |
The lightwave-field induces ultrafast electric dipole oscillation in the solid-state material, and the lightwave-field-induced electron oscillation is the important physical phenomenon in the fundamental light-matter interaction. We successfully observed the near-infrared (NIR)-pulse-induced electronic dipole oscillations with 860-383 attosecond periodicities in the gallium nitride (GaN) semiconductor and the chromium doped sapphire (Cr:Al2O3) insulator. The measurement was achieved by using the extreme short IAP (192-as duration) and a stable pump (NIR pulse) and probe (IAP) system (timing jitter of~23 as). Since electron oscillation is the origin of the light-matter interaction, results are important for monitoring various optical phenomena through the dielectric polarization. The time dependence will be useful for the study of electronic and photonic devices.
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