| Budget Amount *help |
¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
Fiscal Year 2018: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2017: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
Fiscal Year 2016: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
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| Outline of Final Research Achievements |
Tunneling Field-Effect Transistors (TFET) have been attracted much attention as a building-blocks for future nanoelectronics because of their low-power consumption with high performance. In this research, we proposed new technologies for current boosting and complementary switching operation by controlling the defects at new Si/III-V nanowire heterojunctions in planar structure, and demonstrated state-of-the-art TFET architectures with steep subthreshold slope and high conductivity.
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