Electric field control of the interfacial magnetizm in ferromagnet/insulator structure
Project/Area Number |
16H06081
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Single-year Grants |
Research Field |
Electronic materials/Electric materials
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Research Institution | Tohoku University |
Principal Investigator |
Kanai Shun 東北大学, 電気通信研究所, 助教 (40734546)
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Project Period (FY) |
2016-04-01 – 2018-03-31
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Project Status |
Completed (Fiscal Year 2017)
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Budget Amount *help |
¥12,870,000 (Direct Cost: ¥9,900,000、Indirect Cost: ¥2,970,000)
Fiscal Year 2017: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2016: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
|
Keywords | スピントロニクス / スピンエレクトロニクス / 磁気メモリ / エレクトロニクス / マグネティックス |
Outline of Final Research Achievements |
The electric-field-induced magnetization reversal, in which magnetization is reversed with a torque induced through the electric-field control of the magnetic anisotropy, the switching energy is three orders larger than inevitably consumed charging energy by the electric-field application. This work aims to reduce the switching energy by reducing tunnel current and resulting Joule heating by designing materials properties of ferromagnet and insulator in the electric-field-effect device. We have revealed the proper composition, annealing temperature, and insulator thickness for the reversal, and demonstrated the switching energy less than 10 fJ/bit, which is the smallest switching energy ever achieved in magnetic memory, and as low as that with CMOS. We also have revealed other electric field control of magnetism e.g., electric-field-effect in the magnetic stiffness constant by using nano-scale magnetic tunnel junctions through the electric-field-induced ferromagnetic resonance.
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Report
(3 results)
Research Products
(57 results)
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[Journal Article] Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy2017
Author(s)
A. Okada, S. He, Bo Gu, S. Kanai, A. Soumyanarayanan, S. T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, C. Panagopoulos
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Journal Title
Proceedings of Naional Academy of Science of the United of States of America
Volume: 114
Issue: 15
Pages: 3815-3820
DOI
Related Report
Peer Reviewed / Open Access / Int'l Joint Research
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[Presentation] Development of Spin-Polarised Transistor2016
Author(s)
J. Y. Kim, A. Okada, S. Miyakozawa, S. Kanai, F. Matsukura, I. Farrer, H. E. Beere, D. A. Ritchie, H. Ohno and A. Hirohata
Organizer
Joint European Magnetics Symposia
Place of Presentation
Glasgow, UK
Related Report
Int'l Joint Research
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[Presentation] Development of spin-polarised transistor2016
Author(s)
Y. Kim, A. Okada, S. Miyakozawa, S. Kanai, F. Matsukura, J. Aldous, H. E. Beere, D. A. Ritchie, H. Ohno and A. Hirohata
Organizer
Development of spin-polarised transistor
Place of Presentation
Kaiserslautern, Germany
Related Report
Int'l Joint Research
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[Presentation] Development of Spin-Polarised Transistor2016
Author(s)
Y. Kim, A. Okada, S. Miyakozawa, S. Kanai, F. Matsukura, I. Farrer, H.E. Beere, D.A.Ritchie, H. Ohno, and A. Hirohata
Organizer
14th RIEC workshop on SPINTRONICS
Place of Presentation
Sendai, Japan
Related Report
Int'l Joint Research
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[Presentation] Temperature and tehickness dependencies of ferromagnetic resonance spectra of MgO/CoFeB/MgO2016
Author(s)
A. Okada, S. He, B. Gu, S. Kanai, A. Soumyanarayanan, S.T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, and C. Panagopoulos
Organizer
4th JSPS Core-to -Core Workshop on "New -Concept Spintronic Devices"
Place of Presentation
Sendai, Japan
Related Report
Int'l Joint Research / Invited
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