| Budget Amount *help |
¥24,830,000 (Direct Cost: ¥19,100,000、Indirect Cost: ¥5,730,000)
Fiscal Year 2018: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2017: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
Fiscal Year 2016: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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| Outline of Final Research Achievements |
We fabricated FePt and DO3-orderd Fe3Si-nanodots nanodots on an ultrathin SiO2 and evaluated local I-V characteristics through individual dots by using a magnetic cantilever under the external magnetic fields. A significantly high spin dependent current ratio of more than 100 was observed by changing the relative direction of magnetizations between a FePt nanodot base and a CoPtCr-coated atomic force microscope probe at room temperature. We believe our findings will open a way to realize a spin transistor that exhibiting a high on/off ratio, sufficiently large thermal stability for data retention, low power consumption, and room temperature operation.
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