Formation of Fe-based Hybrid-Nanodots and Their Magnetoelectronic Transport Properties
| Project/Area Number |
16H06083
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥24,830,000 (Direct Cost: ¥19,100,000、Indirect Cost: ¥5,730,000)
Fiscal Year 2018: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2017: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
Fiscal Year 2016: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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| Keywords | 磁性ドット / メモリ / 合金ナノドット / スピン |
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| Outline of Final Research Achievements |
We fabricated FePt and DO3-orderd Fe3Si-nanodots nanodots on an ultrathin SiO2 and evaluated local I-V characteristics through individual dots by using a magnetic cantilever under the external magnetic fields. A significantly high spin dependent current ratio of more than 100 was observed by changing the relative direction of magnetizations between a FePt nanodot base and a CoPtCr-coated atomic force microscope probe at room temperature. We believe our findings will open a way to realize a spin transistor that exhibiting a high on/off ratio, sufficiently large thermal stability for data retention, low power consumption, and room temperature operation.
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| Academic Significance and Societal Importance of the Research Achievements |
近年、次世代不揮発性ワークメモリとして磁気トンネル接合(MTJ) を用いた磁気抵抗メモリ（MRAM）に高い関心が集まっているが、高密度集積化と高信頼動作の確保の両立が重要課題となっている。本研究で提案する「磁性合金ナノドットのハイブリッド集積構造」は、異なる磁化特性を有する合金ナノドットの一次元連結構造でハイブリッド集積構造内の磁化状態を反映するトンネル磁気抵抗効果を使った不揮発性メモリ開発に向けた独創的な構造であり、これらの課題は克服できる。
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Report
(4 results)
Research Products
(28 results)
