| Budget Amount *help |
¥25,350,000 (Direct Cost: ¥19,500,000、Indirect Cost: ¥5,850,000)
Fiscal Year 2019: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2018: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2017: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥15,470,000 (Direct Cost: ¥11,900,000、Indirect Cost: ¥3,570,000)
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| Outline of Final Research Achievements |
Gate-pulse-induced electron-hole recombination is a fundamental phenomenon in semiconductors, and is widely used for analyzing the defects at metal-oxide-semiconductor (MOS) interfaces called as the charge pumping (CP) method. In this study, the CP under the electron spin resonance condition was conducted in silicon MOS transistors. The results showed that two major defects at the Si(100)/SiO2 interface participate in the CP process. Moreover, the two-electron CP process was proposed based on the analysis of the resonance signals.
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