| Budget Amount *help |
¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2018: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2017: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2016: ¥20,670,000 (Direct Cost: ¥15,900,000、Indirect Cost: ¥4,770,000)
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| Outline of Final Research Achievements |
Spin transport properties in the surface and interface states of (A)inversion layer of silicon and germanium (B)two dimensional electron gases in GaAs based HEMT structure, (C) topological insulators, and (D)LaAlO3/SrTiO3 two dimensional electron gases were investigated. As for the (C)surface states of the topological insulators, a clear reciprocal spin-charge interconversion was demonstrated in copper-based lateral spin valves with topological insulators. The Rashba length, an indicator of spin-charge conversion efficiency was estimated to be more than 10 nm which is the longest value reported so far. As for the (D) LaAlO3/SrTiO3 study, proximity induced anisotropic magnetoresistance effect was detected indicating ferromagnetism in LaAlO3/SrTiO3 two dimensional electron gases.
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