| Budget Amount *help |
¥185,250,000 (Direct Cost: ¥142,500,000、Indirect Cost: ¥42,750,000)
Fiscal Year 2020: ¥24,830,000 (Direct Cost: ¥19,100,000、Indirect Cost: ¥5,730,000)
Fiscal Year 2019: ¥28,990,000 (Direct Cost: ¥22,300,000、Indirect Cost: ¥6,690,000)
Fiscal Year 2018: ¥29,380,000 (Direct Cost: ¥22,600,000、Indirect Cost: ¥6,780,000)
Fiscal Year 2017: ¥36,140,000 (Direct Cost: ¥27,800,000、Indirect Cost: ¥8,340,000)
Fiscal Year 2016: ¥65,910,000 (Direct Cost: ¥50,700,000、Indirect Cost: ¥15,210,000)
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| Outline of Final Research Achievements |
Transporting and injecting spin-polarized electrons into group III-V compound semiconductor quantum dots have been studied aiming at constructing a photoelectric conversion system platform of spin-information. Spin-functional optical/photonic devices have also been studied toward room temperature (RT) operation.
High-efficiency spin injection is realized by tunnel-coupled InGaAs quantum dots with a quantum well. Quantum transport of spin-polarized electrons using a superlattice barrier is demonstrated. Furthermore, a spin-tunnel structure of InAs dots with a GaNAs well demonstrates efficient spin-polarization amplification based on spin blocking of localized electron levels in the GaNAs. As a result, we achieve 90% RT spin polarization. Current spin injection from a ferromagnetic Fe electrode is established at RT. A new electric-field effect device for optical spin-polarization control is also proposed.
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