| Budget Amount *help |
¥194,610,000 (Direct Cost: ¥149,700,000、Indirect Cost: ¥44,910,000)
Fiscal Year 2020: ¥21,060,000 (Direct Cost: ¥16,200,000、Indirect Cost: ¥4,860,000)
Fiscal Year 2019: ¥26,000,000 (Direct Cost: ¥20,000,000、Indirect Cost: ¥6,000,000)
Fiscal Year 2018: ¥25,220,000 (Direct Cost: ¥19,400,000、Indirect Cost: ¥5,820,000)
Fiscal Year 2017: ¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2016: ¥96,460,000 (Direct Cost: ¥74,200,000、Indirect Cost: ¥22,260,000)
|
|---|
| Outline of Final Research Achievements |
We have been focusing on the invention of time-resolved scanning nonlinear dielectric microscopy and its application to this research project, especially the interface evaluation of SiO2/SiC and Al2O3/GaN MOS devices, which are attracting attention as next-generation power devices, and have obtained many findings on the correlation between the device properties and the interface.
The most significant result is the clarification of the factors that cause mobility degradation based on the measurement results of Dit and real-space distribution of surface potentials. In the course of this research, many new SNDM-derived microscopy and analysis methods were developed, laying the foundation for new evaluation techniques to be used in the future.
|
