Solution-based gate dielectrics for high performance graphene transistors
| Project/Area Number |
16H06631
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
PARK GOONHO 東北大学, 電気通信研究所, 教育研究支援者 (90784116)
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| Project Period (FY) |
2016-08-26 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | グラフェン / 溶液法 / 絶縁膜 / トランジスタ / マイクロウェーブ / 電界効果トランジスタ |
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| Outline of Final Research Achievements |
We propose a damage-free formation method for high-quality gate dielectrics on epitaxial graphene (EG), which involves solution-based Al2O3 coating combined with microwave-assisted annealing (MW-sol-Al2O3). This method substantially preserves the pristine properties of EG with minimized hole doping and strain induction. The MW-sol-Al2O3 showed a surface roughness of >0.237nm and a dielectric constant of 7.5. Its leakage current is 1000 times smaller than that of natural Al2O3 at the same electric field, was obtained. These excellent MW-sol-Al2O3 properties are ascribed to the effective elimination of hydroxyl- and carboxyl-related components from the film by microwave-assisted annealing.
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Report
(2 results)
Research Products
(2 results)
