Device modeling of SiC bipolar junction transistors and fabrication of high-frequency power converters
| Project/Area Number |
16H06890
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Project Period (FY) |
2016-08-26 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 炭化珪素 / バイポーラトランジスタ / 電力変換回路 / ベース駆動回路 / 高周波動作 / デバイスモデリング / スイッチング特性 / SiC / 回路シミュレーション |
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| Outline of Final Research Achievements |
In this study, high-frequency power converters are investigated with silicon carbide (SiC) bipolar junction transistors (BJTs). In order to design high-frequency power converters, numerical simulation is constructed by developing device models of semiconductor devices and analyzing parasitic components of circuits. Then, a high-speed gate driving circuit is designed using the constructed numerical simulation. Since BJT is a current-controlled device, a speed-up capacitor with a base resistance is required for high-frequency switching. Finally, a 100-W DC-DC boost converter is fabricated using a SiC BJT. It is found that the power conversion efficiency is 94% at a switching frequency of 1 MHz.
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Report
(3 results)
Research Products
(18 results)
