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Passivation of inorganic device materials by molecular superacid treatment

Research Project

Project/Area Number 16H07127
Research Category

Grant-in-Aid for Research Activity Start-up

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionOsaka Prefecture University

Principal Investigator

Daisuke Kiriya  大阪府立大学, 工学(系)研究科(研究院), 助教 (80568030)

Project Period (FY) 2016-08-26 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Keywords無機半導体 / 分子 / 酸化還元 / 超酸 / パッシベーション / 電子デバイス / マイクロ・ナノデバイス / 原子分子処理 / 分子無機ハイブリッド / ナノエレクトロニクス
Outline of Final Research Achievements

We tried to investigate the applicability of molecular materials for improvement of inorganic device materials. In this research, as inorganic device materials, we focused on germanium and 2D semiconducting materials. We applied molecular treatment mainly using superacid and investigated how it works and improves the properties of the inorganic device materials. We clarified that solvents which dissolve molecules are important for improving the device performance after the molecular treatment. Our investigation would be useful for applying the next generation inorganic materials for electro-optical devices and extracting the potential properties by chemical treatment.

Report

(3 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Annual Research Report
  • Research Products

    (4 results)

All 2018 2017

All Journal Article (1 results) (of which Peer Reviewed: 1 results,  Open Access: 1 results) Presentation (3 results)

  • [Journal Article] Reaction of N,N’-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide2018

    • Author(s)
      A. Fukui, K. Miura, H. Ichimiya, A. Tsurusaki, K. Kariya, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya
    • Journal Title

      AIP Advances

      Volume: 8 Issue: 5 Pages: 055313-055313

    • DOI

      10.1063/1.5029315

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] MoS2のキャリア制御を志向した分子接合界面の状態制御2017

    • Author(s)
      一宮 永,三浦 光平,吉村 武,芦田 淳, 藤村 紀文,桐谷 乃輔
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜(パシフィコ横浜)
    • Year and Date
      2017-03-16
    • Related Report
      2016 Annual Research Report
  • [Presentation] 二次元無機半導体MoS2における~100%フォトルミネッセンス量子収率化2017

    • Author(s)
      桐谷乃輔
    • Organizer
      平成28年度第5回半導体エレクトロニクス部門委員会講演会
    • Place of Presentation
      鳥取大学鳥取キャンパス
    • Year and Date
      2017-01-28
    • Related Report
      2016 Annual Research Report
  • [Presentation] 層状半導体への位置選択的キャリア注入を志向した分子性ドーパントの開発2017

    • Author(s)
      福井暁人、三浦公平、一宮永、吉村武、芦田淳、藤村紀文、桐谷乃輔
    • Organizer
      第78回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report

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Published: 2016-09-02   Modified: 2019-03-29  

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